Soon‐Mok Choi

Korea University of Technology and Education

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Won‐Seon Seo

Yonsei University

Il‐Ho Kim

Korea National University of Transportation

Kyu Hyoung Lee

Yonsei University

Byeong Geun Kim

Gyeongbuk IT Convergence Industrial Technology Institute

Young Soo Lim

Pukyong National University

Seong‐Min Jeong

Korea Institute of Ceramic Engineering and Technology

Jong‐Young Kim

Korea Institute of Ceramic Engineering and Technology

Won-Seon Seo

Yonsei University

Hong-Lim Lee

Yonsei University

Soonil Lee

Changwon National University

Cooperative Institutions

Korea Institute of Ceramic Engineering and Technology

Yonsei University

Government of the Republic of Korea

Seoul National University

Sungkyunkwan University

Samsung (South Korea)

Korea Institute of Science and Technology

Hanyang University

Korea Advanced Institute of Science and Technology

Korea University

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Phase analysis and thermoelectric properties of Zn_1−xM_xO (M= Al, Ga) samples

Surface and Interface Analysis (2012)

Kwang‐Hee Jung Soon‐Mok Choi Changhyun Lim Won‐Seon Seo Hyung‐Ho Park

Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n ‐type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al 3+ and Ga 3+ . We investigated reasons of different solution limits and secondary phases and microstructures between these two donor‐doped cases. Thermoelectric properties also showed different tendency between Al 3+ ‐ and Ga 3+ ‐doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 × 10 −4 W/mK 2 at 1050 K was obtained in Zn 0.98 Ga 0.02 O composition. Copyright © 2012 John Wiley & Sons, Ltd.

10.1002/sia.4987

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Citations (11)

Thermoelectric properties of the Bi-doped Mg2Si system

Current Applied Physics (2011)

Soon‐Mok Choi Kyung‐Ho Kim Il‐Ho Kim Sun‐Uk Kim Won‐Seon Seo

Spark Plasma Sintering

Atmospheric temperature range

Figure of Merit

Dimensionless quantity

Stoichiometry

10.1016/j.cap.2011.01.031

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Citations (52)

Effect of Minor Elements Content on the Phase Formation and Mechanical Properties of 6xxx Series Aluminum Alloy Sheets

Journal of Materials Engineering and Performance (2023)

GyeongSeok Joo Yongwook Song MinSang Kim JaeHyuk Shin Soon‐Mok Choi

Ductility (Earth science)

Stacking-fault energy

Hardening (computing)

10.1007/s11665-023-08211-x

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Citations (1)

Thermoelectric Properties of the Ca1−x R x MnO3 Perovskite System (R: Pr, Nd, Sm) for High-Temperature Applications

Journal of Electronic Materials (2010)

Soon‐Mok Choi Changhyun Lim Won‐Seon Seo

Ionic radius

10.1007/s11664-010-1446-3

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Citations (34)

High-temperature Thermoelectric Properties of the Ca3-xKxCo4O9 (0 ¡? x ¡? 0.3) System

Journal of the Korean Physical Society (2010)

Soon‐Mok Choi Changhyun Lim Won‐Seon Seo

10.3938/jkps.57.1054

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Citations (16)

Spontaneous Growth of Ultra-Long SiOx Nanowires from SiC Thin Films by Thermal Annealing

Journal of Nanoscience and Nanotechnology (2014)

Byeong Geun Kim Ji Eun Lee Soon‐Mok Choi Won‐Seon Seo Seong‐Min Jeong

The use of a simple thermal treatment for growing ultra-long SiO(x) nanowires on silicon carbide (SiC) thin films is reported for the first time. SiC thin films with a thickness of 100 nm were prepared by sputtering at room temperature followed by annealing in an Ar/H2 gas atmosphere. The growth of SiO(x) nanowires started when the annealing temperature was at 1200 degrees C, and was rapidly and spontaneously grown at temperatures above 1250 degrees C. The diameters of as-grown SiO(x) nanowires with lengths up to several hundred micrometers were determined to be -1 μm.

10.1166/jnn.2015.9705

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Doping effects on the thermoelectric properties of Cu-intercalated Bi2Te2.7Se0.3

Current Applied Physics (2014)

Kyu Hyoung Lee Soon‐Mok Choi Sang Il Kim Jong Wook Roh Dae Jin Yang

Spark Plasma Sintering

Phonon scattering

10.1016/j.cap.2014.12.006

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Citations (28)

Transport and thermoelectric properties of Bi2Te2.7Se0.3 prepared by mechanical alloying and hot pressing

Journal of the Korean Physical Society (2015)

A-Young Eum Il‐Ho Kim Soon‐Mok Choi Young Soo Lim Won‐Seon Seo

Hot pressing

Degenerate semiconductor

Bismuth telluride

Atmospheric temperature range

Electron Mobility

10.3938/jkps.66.1726

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Citations (10)

High-Temperature Stability of Thermoelectric Skutterudite In0.25Co3FeSb12

Journal of Electronic Materials (2012)

Kwan‐Ho Park Sin-Wook You Soon‐Chul Ur Il‐Ho Kim Soon‐Mok Choi

Skutterudite

Thermal Stability

10.1007/s11664-011-1889-1

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Citations (19)

Formation of the Fluorite Structure in the $\textrm{Y}_{0.8}\textrm{Ta}_{0.2}\textrm{O}_{1.7}$-MO(M=Ba, Sr, Ca and Mg) System

Korean Journal of Materials Research (1997)

Shin Kim Soon‐Mok Choi Hong-Lim Lee

Formation of fluorite structure and other related crystal structures in the -MO(M=Ba, Sr, Ca and Mg) system has been studied of cubic perovskite type ordered structure anti of cubic structure were produced besides the defect fluorite structure when 4 moIob of BaO or SrO was added to When CaO more than 8 nlol/o was added to , monoclinic: , and cubic were pri~tlucecl ;IS this sec:onci phases hesides the main fluorite truc,ture. Smglc phase of fluorite structure \vas 1)roduc:ciI when MgO was added up to 12 mol%, however, MgO appeared as the second phase besides the main fluorire structure when MgO was added more than lti moI0'. Consquently, it is considered rh;it the formation of tluorite structure is related with the formation of the cubic perovskite type ordered structure of as well as the cation radii of the additives.additives.

Fluorite

Monoclinic crystal system

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