J.H. Werner

University of Stuttgart

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Uwe Rau

Forschungszentrum Jülich

M.B. Schubert

University of Stuttgart

Jürgen Köhler

University of Bayreuth

Michael Oehme

University of Stuttgart

Renate Zapf‐Gottwick

University of Stuttgart

E. Kasper

University of Stuttgart

Ralf B. Bergmann

Bremen Institute for Applied Beam Technology

J. Schulze

University of Stuttgart

Rolf Brendel

Institut für Solarenergieforschung

Bastian Zinßer

University of Stuttgart

Cooperative Institutions

University of Stuttgart

154

Max Planck Society

Centre National de la Recherche Scientifique

Max Planck Institute for Solid State Research

Robert Bosch (Germany)

University of Tübingen

University of Konstanz

International Solar Energy Research Center Konstanz

Leibniz Institute for Solid State and Materials Research

University of California, Berkeley

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Local strained silicon platform based on differential SiGe/Si epitaxy

Journal of Crystal Growth (2011)

A. Karmous Michael Oehme J.H. Werner O. Kirfel E. Kasper

Strained silicon

Chemical Mechanical Planarization

10.1016/j.jcrysgro.2011.04.006

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Citations (2)

¡Rápido, a guardar! (2.0)

Elektor magazine (2013)

J.H. Werner

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Mo-Si-B合金のアルミニウムパックセメンテーション | 文献情報 | J-GLOBAL 科学技術総合リンクセンター

Scripta Materialia (2006)

Ridwan Sakidja F Rioult J.H. Werner Perepezko J.h.

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Additionsverbindungen aus Trimethylstibindihalogeniden und Antimon(III)-halogeniden / Addition Compounds of Trimethylstibine Dihalogenides and Antimony(III) Halogenides

Zeitschrift für Naturforschung B (1981)

J.H. Werner W. Schwarz Armin Schmidt

Trimethylstibine dichloride and dibromide, resp., react with antimony(III) chloride and bromide, resp., to yield the 1:1 addition compounds (CH 3 ) 3 SbCl 2 · SbCl 3 (1) and (CH 3 ) 3 SbBr 2 · SbBr 3 (2). The crystal and molecular structure of 1 and 2 are determined by X-ray analysis, the Raman spectra discussed and assigned

10.1515/znb-1981-0506

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From polycrystalline to single crystalline silicon on glass

Thin Solid Films (2001)

J.H. Werner R. Dassow Titus J. Rinke Jürgen Köhler Ralf B. Bergmann

Polycrystalline silicon

Nanocrystalline silicon

10.1016/s0040-6090(00)01788-0

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Citations (40)

Silicon epitaxial solar cell with 663-mV open-circuit voltage

Applied Physics Letters (1992)

Andrew Blakers J.H. Werner E. Bauser H. J. Queisser

Silicon films of 20 μm thickness have been grown epitaxially on silicon substrates by liquid-phase epitaxy. Solar cells fabricated on such layers display open-circuit voltages as high as 663 mV (AM1.5, 25 °C), a value which exceeds previous data by a large margin. High open-circuit voltages are a prerequisite for thin-film solar cells with high efficiencies. Our result has applications to both space cells and to low-cost terrestrial cells.

Open-circuit voltage

10.1063/1.106866

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Citations (38)

Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

Journal of Applied Physics (2000)

N. Jensen Uwe Rau R. M. Hausner Suresh Uppal L. Oberbeck

This article investigates limitations to the open circuit voltage of n-type amorphous silicon/p-type crystalline silicon heterojunction solar cells. The analysis of quantum efficiency and temperature dependent current/voltage characteristics identifies the dominant recombination mechanism. Depending on the electronic quality of the crystalline silicon absorber, either recombination in the neutral bulk or recombination in the space charge region prevails; recombination at the heterointerface is not relevant. Although interface recombination does not limit the open circuit voltage, recombination of photogenerated charge carriers at the heterointerface or in the amorphous silicon emitter diminishes the short circuit current of the solar cells.

Open-circuit voltage

Quantum Efficiency

Charge carrier

10.1063/1.372230

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Citations (119)

Long-term leaching of photovoltaic modules

Japanese Journal of Applied Physics (2017)

Jessica Nover Renate Zapf‐Gottwick Carolin Feifel Michael Koch Jörg W. Metzger

Some photovoltaic module technologies use toxic materials. We report long-term leaching on photovoltaic module pieces of 5 × 5 cm2 size. The pieces are cut out from modules of the four major commercial photovoltaic technologies: crystalline and amorphous silicon, cadmium telluride as well as from copper indium gallium diselenide. To simulate different environmental conditions, leaching occurs at room temperature in three different water-based solutions with pH 3, 7, and 11. No agitation is performed to simulate more representative field conditions. After 360 days, about 1.4% of lead from crystalline silicon module pieces and 62% of cadmium from cadmium telluride module pieces are leached out in acidic solutions. The leaching depends heavily on the pH and the redox potential of the aqueous solutions and it increases with time. The leaching behavior is predictable by thermodynamic stability considerations. These predictions are in good agreement with the experimental results.

Cadmium telluride photovoltaics

10.7567/jjap.56.08md02

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Citations (43)

Radiative efficiency limit of terrestrial solar cells with internal carrier multiplication

Applied Physics Letters (1995)

J.H. Werner Rolf Brendel Hans‐Joachim Queisser

Charge multiplication by hot carriers in semiconductors opens a new perspective for improved photovoltaic energy conversion. Here, we estimate the theoretical limit for the efficiency of solar cells that make use of the best possible carrier multiplication and have the lowest possible recombination loss, i.e., radiative recombination only. For a terrestrial cell under 100 mW/cm2 air mass 1.5 global illumination, the uppermost efficiency amounts to 44.2%. Cells with internal carrier multiplication require a modified description of their saturation current density.

Multiple exciton generation

Saturation current

Charge carrier

Saturation (graph theory)

10.1063/1.114719

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Citations (47)

Module efficiency increase by colored cell connectors

Liv Proenneke M. Reuter Gerda C. Glaeser J.H. Werner

Interconnecting wires in a module with mono-crystalline silicon solar cells collect the current and, at the same time, shadow the cells from the sun. Therefore, 4% of each solar cell area is optical inactive. We present dispersive white and UV-fluorescent paint on top of the connectors of an encapsulated mono-crystalline silicon solar cell. By guiding impinging photons onto the cell and enhancing the optical active area, the coloring induces an increased short circuit current density. Both, the white paint alone and the UV-fluorescent paint on top of white paint increase the calculated efficiency from η = 16.0% to η = 16.2%. We expect an even higher efficiency increase in a module with paint on all optical and photovoltaic inactive areas.

Colored

Shadow mask

10.1109/pvsc.2010.5617039

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Citations (3)