Zhinong Yu

Beijing Institute of Technology

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Wei Xue

Xi'an Jiaotong University

Jian Guo

Nanjing University of Science and Technology

Jianshe Xue

BOE Technology Group (China)

Dan Kuang

Beijing Institute of Technology

Cheng Jin

Beijing Institute of Technology

Xuyang Li

Xi'an Technological University

Bin Liu

Binzhou Medical University

Dongpu Zhang

China Academy of Space Technology

Shi Dawei

Xiamen Institute of Rare-earth Materials

Xianwen Liu

Beijing Institute of Technology

Cooperative Institutions

Beijing Institute of Technology

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Beijing Institute of Optoelectronic Technology

University of Electronic Science and Technology of China

Peking University

National Institute of Astrophysics, Optics and Electronics

Institute of Microelectronics

BOE Technology Group (China)

Tsinghua University

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The annealing process of R.F. magnetron sputtered ZnO:Al films

Asia Optical Fiber Communication and Optoelectronics Conference (2007)

Zhinong Yu Jin Xu Wei Xue Jinwei Li

The ZnO:AI films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10 ^-3 Omegaldrcm was obtained in the condition of vacuum annealing at 220degC.

Cavity magnetron

10.1109/aoe.2007.4410872

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P‐6.7: High Performance, Low Temperature Aqueous Route Calcium‐Doped Indium Zine Oxide Thin Film Transistors

SID Symposium Digest of Technical Papers (2018)

Xuyang Li Cheng Jin Zhinong Yu

The high‐performance Calcium‐doped Indium Zine oxide thin film transistors (CIZO TFTs) were fabricated using an aqueous route with low temperature annealing. The effects of different atomic percentages of Ca on electrical performance of TFTs were examined. The experimental results shows that the turn‐on‐voltage (V on ) shifts in a positive direction and the off‐current (I off ) decreases as the Ca content is increased, which attributes to the incorporation of Ca with low standard electrode potential (−2.87 V) and high optical band gap (7.03 eV), when oxidized. The electrical characteristics of CIZO TFTs with an atomic ratio of In:Ca:Zn=6.8:0.2:2.2 are optimized as follows: saturation mobility (μ sat ) of 2.14 cm 2 /V•s, threshold voltage (V th ) of 3.00 V, on/off current ratio (I on /I off ) of 7.7•10 6 , subthreshold swing (S.S.) of 0.41 V/decade. In addition, the effects of pre‐annealing in N 2 O‐plasma environment (PA‐N 2 O‐PE) were also investigated. The electrical characteristics are improved, and the optimized electrical characteristics of CIZO TFTs are observed with an atomic ratio of In:Ca:Zn=6.8:0.3:2.2.

10.1002/sdtp.12798

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Silicon Rich Oxide with controlled mean size of silicon nanocrystals by deposition in multilayers

E. Quiroga Wolfgang Bensch M. Aceves Zhinong Yu J. P. Savy

The size of Si nanocrystals in silicon rich oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.

Deposition

Silicon oxide

10.1109/ulis.2009.4897607

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The role of the sequence of plasma treatment and high temperature annealing on solution-processed a-IMZO thin film transistor

Journal of Alloys and Compounds (2019)

Cheng Jin Xuyang Li Jian Guo Haifei Xu Yonghua Chen

Passivation

10.1016/j.jallcom.2019.04.115

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BaAl₂S₄:Eu thin films sputtered by complex target with spark plasma sintering BaS:Eu pellets

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2012)

Dongpu Zhang Wei Xue Zhinong Yu

Europium doping barium thioaluminates thin films are sputtered by Al complex target embedded with BaS:Eu pellets sintered by spark plasma sintering (SPS). Thin films are deposited by RF-sputtering with complex target. BaAl₂S₄ is found in each thin film sample while BaAl₄S₇ appears in the samples only if the amount of BaS:Eu pellets is more than 3. Oxidizing products are BaAl₂O_4,BaSO₄ and Al₂O₃. The amounts of barium thioaluminates including BaAl₂S₄ and BaAl₄S₇ will increase while the one of Al₂O₃ and BaS decrease if more BaS:Eu pellets are embedded in the target during sputtering. Elements analysis is carried out by EDS. The Al/Ba ratio in thin films will approach 2.0 with more pellets existing in target. PL spectra of thin films are measured and analyzed. The most obvious emission peak in each spectrum is located at about 470nm which corresponds to the 4f⁶5d¹→4f⁷ transition of Eu2+ in BaAl₂S₄ lattice. The emission peak will approach 470nm as more pellets are embedded in complex target. As a result, it can be concluded that increasing the amounts of BaS:Eu pellets in complex target is an efficient way to achieve better Eu doping barium thioaluminates thin film.

Spark Plasma Sintering

Europium

Barium

10.1117/12.2001136

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Visible electroluminescence on FTO/thin SRO/n-Si structures

Materials Science and Engineering B (2010)

Karim Monfil Leyva M. Aceves‐Mijares Zhinong Yu F. de Moure‐Flores A. Morales–Sánchez

Tin oxide

Transparent conducting film

10.1016/j.mseb.2010.03.062

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Optical sensitivity of Al/SRO/Si MOS diodes

Zhinong Yu M. Aceves J. Carrillo

In this work, the I-V characteristics of an Al/SRO/Si MOS-like diode under illumination were studied. A strongly illumination-dependent photocurrent was observed although the structure was opaque on both sides. The possible mechanisms that create the photocurrent were studied. We believe that the photo-carriers generated in a region surrounding the surface depletion layer dominate the photocurrent. The carriers generated by light in this region can diffuse into the depletion layer, and contribute to the photocurrent.

Photocurrent

Depletion region

Opacity

Photoconductivity

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The preparation of AZO films with RF sputtering

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2007)

Zhinong Yu Jin Xu We Xue Xia Li Jinwei Li

ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al₂O₃ (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10^-3 Ω • cm.

Partial pressure

10.1117/12.791173

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Effects of Annealing Treatments on the Characteristics of MgO Films in Plasma Display Panel(PDP)

Transactions of Beijing Institute of Technology (2006)

Zhinong Yu

Characteristics of MgO films prepared by e-beam evaporation as a function of the annealing process are studied.The results show that,after the annealing process,the crystallinity of MgO films is improved,and the peak intensity in IR spectrum corresponding to water content is decreased.However,the visible transmission is decreased and cracks are easily produced on the surface for MgO films prepared at low temperature or low oxygen flux.The preferred orientation or the crystallinity plays an important role in controlling the visible spectrum and surface features of the deposited MgO films,and the visible spectrum is almost independent of the surface roughness of the films.

Plasma display

Visible spectrum

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Wavelength Selective and Cesium Halides Additive Photodetectors Based on Two-Dimensional Perovskite: (C 8H 9NH 3) 2PbBr 4*

SSRN Electronic Journal (2021)

Yan Li Dan Kuang Jian Guo Bin Liu Yue Zhang

Considering of cost-effective and simple assembly principle of organic-inorganic halide perovskite (OIHP), producing perovskites into polycrystalline thin films from precursor solution has proved to be appealing. In this paper, (C 8H9NH3)2PbBr4 was fabricated based on C8H9NH3Br (PEABr) and PbBr2 according to compositions in the vicinity of (PEA)2PbI4, and the two-dimensionally (2D) perovskite was obtained which entitled with superior photoelectric performance, excellent solution processability and flexible substrates compatibility. And hydrophobic nature of spacer cation of aromatic alkylammonium or a large aliphatic both with the highly consistent orientation of 2D perovskites are beneficial for reducing the grain boundaries density. Meanwhile, optimized (PEA)2PbBr4 were obtained via CsBr additive. Systematic material characterizations manifested enhanced surface morphology, photoluminescence efficiency and carrier lifetime of the CsBr modified (PEA)2PbBr4. Then related (PEA)2PbBr4 based photodetectors exhibited a good responsivity of 0.67 AW-1 when detectivity approached 5.2 x 1011 Jones, and a large on/off ratio about 500 was obtained. Meanwhile, the devices possessed noticeable stability during the optical switch tests with the rise time and decay time about 0.28 s and 0.21 s for CsBr dopped devices illuminated by 385 nm under 10 V bias. More importantly, spectral wavelength selectivity of CsBr based photodetector indicated the potential utilization in ultraviolet detecting when a wide bandgap of 3.018 eV was obtained.

Caesium

10.2139/ssrn.3967338

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