A. Ciszewski

University of Wrocław

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P. Mazur

University of Wrocław

M. Grodzicki

University of Wrocław

S. Zuber

University of Wrocław

P. V. Galiy

Lviv University

T. M. Nenchuk

Lviv University

R. Wasielewski

University of Wrocław

Zbigniew Szczudło

University of Wrocław

J. Brona

University of Wrocław

J.H. Block

Fritz Haber Institute of the Max Planck Society

O. R. Dveriy

Electron (Ukraine)

Cooperative Institutions

Joint Institute for Nuclear Research

113

University of Wrocław

Moscow Engineering Physics Institute

Dubna State University

European Organization for Nuclear Research

Institute for Nuclear Research

P.N. Lebedev Physical Institute of the Russian Academy of Sciences

A. Alikhanyan National Laboratory

GSI Helmholtz Centre for Heavy Ion Research

Technical University of Darmstadt

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Sb Layers on p-GaN: UPS, XPS and LEED Study

Acta Physica Polonica A (2014)

M. Grodzicki P. Mazur J. Pers S. Zuber A. Ciszewski

The electronic structure of p-type GaN(0001) surfaces and its modication by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report.The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diraction.Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature.Electron anity of clean p-GaN surface amounted to 3.0 eV.A small amount of Sb on GaN(0001) surface reduced the electron anity to 1.9 eV.The work function of the Sb layer was equal to 4.4 eV.For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.

10.12693/aphyspola.126.1128

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Citations (10)

Intermixing and surface alloying in Hf and Zr ad-layers on W(100)

A. Ciszewski Artur Trembułowicz L. Jurczyszyn Zbigniew Szczudło

Hafnium or zirconium layers of thickness from a fraction of geometrical monolayer up to 2 monolayers were vapor-deposited under ultra high vacuum on the surface of the (100)-oriented W single crystal and gradually annealed at various temperatures from 300 to 2100 K. Intermixing, interdiffusion, and alloying of Hf or Zr adlayers on W(100) were observed and studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Two surface alloys of different stoichometry have been identified for both Hf/W(100) and Zr/W(100) adsorption systems. Influence of oxygen adsorption on topography and morphology of Zr adlayers deposited on stepped W(100) surface was studied by STM. Formation of islands of Zr ₃ W surface alloy surrounded by bunched steps was observed in this case.

Auger electron spectroscopy

Low-energy electron diffraction

Hafnium

10.1109/ivnc.2012.6316900

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Citations (0)

Faceting of curved tungsten surface induced by palladium

Surface Science (2002)

Andrzej Szczepkowicz A. Ciszewski

Faceting

Field ion microscope

Crystal (programming language)

10.1016/s0039-6028(02)01960-x

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Citations (22)

Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals

Journal of Nano- and Electronic Physics (2018)

P. V. Galiy P. Mazur A. Ciszewski T. M. Nenchuk I. R. Yarovets’

Cleavage (geology)

Surface States

10.21272/jnep.10(4).04002

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Citations (2)

Crystalline co-adsorption layers of indium and antimony on tungsten field emitter tips

Journal of Crystal Growth (1982)

A. Ciszewski Gregory Kozlowski S. Surma

Indium antimonide

Vacuum evaporation

Crystal (programming language)

Surface diffusion

10.1016/0022-0248(82)90258-5

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Citations (0)

MnGa and (Mn,Ga)N-like alloy formation during annealing of Mn/GaN(0001) interface

Applied Surface Science (2019)

M. Grodzicki P. Mazur J. Brona A. Ciszewski

Low-energy electron diffraction

Ultraviolet photoelectron spectroscopy

Lattice constant

10.1016/j.apsusc.2019.03.121

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Citations (9)

A square titanium nanomesh on W(100)

Nanotechnology (2007)

Artur Trembułowicz A. Ciszewski

A regular square mesh structure with 4.5 nm periodicity was formed after annealing an adsorption layer of Ti on W(100) at 1370 K. The nanomesh consists of two self-assembled layers on top of the Ti adlayer, ~3.5 physical monolayers thick on average. The first layer of the nanomesh is composed of wires ~1.3 nm wide arranged along the directions of the W(100) substrate. The second one is formed by islands of ~1.6 nm in diameter arrayed upon crossing sites of the wires. The nanomesh is thermally stable up to 1470 K.

Nanomesh

Square (algebra)

10.1088/0957-4484/18/34/345303

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Citations (5)

Interactions between PTCDI-C8 and Si(100) Surface

Crystals (2023)

K. Lament M. Grodzicki P. Mazur Agata Sabik Rafał Lewandków

PTCDI-C8 molecules are vapor-deposited onto reconstructed Si(100)—(2 × 1) surface under ultra-high vacuum. X-ray photoelectron spectra reveal a bond formation between oxygen atoms of the molecules’ carboxylic groups and Si dangling bonds of the substrate. Following PTCDI—C8 film growth, ultraviolet photoelectron spectra show a drop in the HOMO level with respect to the Fermi level from 1.8 eV to 2.0 eV and a monotonic work function increase from 2.5 eV up to 3.3 eV. For a film thickness of 6.0 nm, a difference of 1.5 eV between the HOMO level of the film and the valence band maximum of the substrate is accomplished.

Dangling bond

10.3390/cryst13030441

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Citations (1)

A comparison of adsorbate-induced faceting on flat and curved crystal surfaces

Surface Science (2005)

Andrzej Szczepkowicz A. Ciszewski Robert Bryl Czesław Oleksy Cheng-Hsun Nien

Faceting

Facet (psychology)

Crystal (programming language)

Field ion microscope

Flat surface