S. Binetti

University of Milano-Bicocca

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M. Acciarri

University of Milano-Bicocca

115

A. Le Donne

University of Milano-Bicocca

102

S. Pizzini

University of Milano-Bicocca

Stefano Marchionna

Ricerca sul Sistema Energetico (Italy)

Vanira Trifiletti

University of Milano-Bicocca

A. Cavallini

University of Bologna

Giorgio Tseberlidis

University of Milano-Bicocca

Jacopo Parravicini

University of Florence

Giovanni Isella

Politecnico di Milano

A. Castaldini

University of Bologna

Cooperative Institutions

University of Milano-Bicocca

106

University of Milan

Politecnico di Milano

Mylan (Switzerland)

National Interuniversity Consortium for the Physical Sciences of Matter

National Interuniversity Consortium of Materials Science and Technology

Centre National de la Recherche Scientifique

Istituto Nazionale per la Fisica della Materia

National Research Council

University of Bologna

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SiGe crystal growth in the absence of the crucible

Journal of Crystal Growth (2013)

S. Binetti A. Croell M. A. Gonik A. Wagner

Crucible (geodemography)

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Tellurium-based nanocomposites for plastic electronic applications

AIP conference proceedings (2016)

Mariano Palomba S. Binetti A. Le Donne U. Coscia G. Ambrosone

Owing to the very brittle nature of the tellurium powder, nanoscopic grains with average size of 4.8nm were produced by dry vibration milling technique using a Mixer mill apparatus. A novel material was obtained by binding the nanosized tellurium grains with poly(methyl methacrylate) (PMMA). The morphology, elemental composition, and structural properties of Te/PMMA films were investigated. The prepared material was composed of hexagonal tellurium and α-phase of tellurium oxide. The electrical properties of the films were studied in dark condition and under white light illumination varying the optical power density from 10 to 170 mW/cm2 and turning on and off the light cyclically.

Tellurium

Brittleness

10.1063/1.4949724

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Radiative recombination processes of thermal donors in silicon

MRS Proceedings (2001)

S. Pizzini S. Binetti E. Leoni A. Le Donne M. Acciarri

Microelectronics

Deep-level transient spectroscopy

10.1557/proc-692-h6.30.1

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Citations (6)

Effect of oxygen concentration on diffusion length in Czochralski and magnetic Czochralski silicon

Materials Science and Technology (1995)

S. Binetti M. Acciarri A. Brianza C. Savigni S. Pizzini

This paper reports some new results on the influence of oxygen aggregation phenomena in the 450-850°C range on the diffusion length of minorities in both Czochralski (Cz) and magnetic Czochralski silicon. Thefeatures of the oxygen aggregation phenomena were studied by infrared spectroscopy at 20 K and the effect of these processes on the diffusion length was monitored by surface photovoltage measurements at 300 K. The results show that in Cz silicon the formation of thermal donors at 450°C is not associated with a detectable increase of the recombination activity, but that thermal donors are the precursors of other oxygen species, which grow during any further heat treatment. It was shown, moreover, that selfinterstitials injected from a surface oxide inhibit the oxygen segregation, in good agreement with predictions in the literature concerning the 'volume exigency' of oxygen segregation processes. Marked evidence of the influence of the cooling rate on the diffusion length was observed at 850°C, where the lifetime of heat treated Cz silicon was shown to be longer for a slow cooling process.

Czochralski method

Atmospheric temperature range

10.1179/026708395790165309

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Citations (4)

Defects and Impurities in Silicon for Solar Cell

S. Binetti

Silicon solar cell

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Flexible solar cells

S. Binetti

Source

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Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD

Materials (2019)

Marta Chrostowski José Alvarez A. Le Donne S. Binetti Pere Roca i Cabarrocas

We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.

10.3390/ma12223795

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Citations (3)

Oxygen distribution on a multicrystalline silicon ingot grown from upgraded metallurgical silicon

Solar Energy Materials and Solar Cells (2010)

Marisa Di Sabatino S. Binetti Joris Libal M. Acciarri Heidi Nordmark

Ingot

Getter

Limiting oxygen concentration

Carrier lifetime

10.1016/j.solmat.2010.09.013

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Citations (33)

Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells

Energy Procedia (2011)

M. Acciarri A. Le Donne Manuel Morgano Lorenzo Caccamo Leo Miglio

In this work, an alternative approach for CIGS thin film growth has been tested, which is different from the common co-evaporation process. Such approach consists of sputtering deposition of the metal elements combined with selenium evaporation. This new and easily scalable procedure allows deposition time of the CIGS layer lower than 15 minutes and can be easily applied not only on rigid but also on flexible substrates in a roll to roll configuration, matching industrial application requirements. The relationships between the growth parameters of such hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films and cells have been studied.

Deposition

10.1016/j.egypro.2011.10.166

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Citations (17)

Studies of the Zn2SnO4 and InxSy as Alternative Buffer Layers Deposited via R.F. Sputtering for Chalcogenide Photovoltaics

29th European Photovoltaic Solar Energy Conference and Exhibition (2014)

M. Acciarri S. Binetti A. Le Donne A. Mereu

Buffer (optical fiber)

10.4229/eupvsec20142014-3dv.1.30

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Citations (1)