L. H. Wang

Beijing University of Technology

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Zhu Tao

Chinese Academy of Sciences

Guanghua Yu

University of Science and Technology Beijing

Jiao Teng

University of Science and Technology Beijing

Qixun Guo

Ji Hua Laboratory

Xue Min Wang

University of Science and Technology Beijing

Zhichao Zheng

Zhejiang Chinese Medical University

Kai Wang

Jiangnan University

He Bai

China Spallation Neutron Source

Wei He

Kunming University of Science and Technology

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University of Science and Technology Beijing

Chinese Academy of Sciences

Institute of Physics

National Laboratory for Superconductivity

University of Chinese Academy of Sciences

Institute of High Energy Physics

Ji Hua Laboratory

China Spallation Neutron Source

Beihang University

Songshan Lake Materials Laboratory

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Ultra-high thermal stability of perpendicular magnetic anisotropy in the W buffered CoFeB/MgO stacks with Zr dusting layers

Applied Physics Letters (2022)

Qixun Guo Kai Wang He Bai Zhichao Zheng L. H. Wang

Practical device applications of magnetic multilayers with perpendicular magnetic anisotropy (PMA) usually need to match the mature complementary metal-oxide-semiconductor (CMOS) integrated techniques, which require high temperature annealing during the back-end-of-line process. Here, we report the realization of PMA in the W buffered CoFeB/MgO stack by inserting a thin Zr dusting layer between CoFeB and MgO layers. An ultra-high thermal stability of PMA in the W/CoFeB/Zr/MgO stack is observed, which is robust upon annealing at 600 °C. The establishment of PMA in W/CoFeB/Zr/MgO is due to the formation of an interface layer between CoFeB and MgO doped with oxidized Zr. After annealing at 540 °C, the magnetic interfacial anisotropy density reaches 3.08 erg/cm2, which is much higher than those in previous reports. The results suggest that the W/CoFeB/Zr/MgO stack with extra high annealing stability is a potential candidate to achieving the practical application of spin-logic device that is compatible with the mature CMOS integrated techniques.

Thermal Stability

10.1063/5.0072848

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