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J. Ávila

Synchrotron soleil

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M. C. Asensio

Instituto de Ciencia de Materiales de Madrid

204

Chaoyu Chen

Shanghai Artificial Intelligence Laboratory

Pavel Dudin

Synchrotron soleil

M. C. Asensio

Parc Científic de la Universitat de València

Genda Gu

Brookhaven National Laboratory

Debora Pierucci

Sorbonne Université

Abdelkarim Ouerghi

Centre de Nanosciences et de Nanotechnologies

M. Izquierdo

European X-Ray Free-Electron Laser

Emmanuel Lhuillier

Institut des NanoSciences de Paris

G. Le Lay

Physique des interactions ioniques et moléculaires

Cooperative Institutions

Centre National de la Recherche Scientifique

318

Université Paris-Saclay

Chinese Academy of Sciences

Lawrence Berkeley National Laboratory

Sorbonne Université

Tsinghua University

Université Paris-Sud

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Consejo Superior de Investigaciones Científicas

Synchrotron soleil

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Two-domains bulklike Fermi surface of Ag films deposited ontoSi(111)−(7×7)

Physical review. B, Condensed matter (2002)

Juan F. Sánchez‐Royo J. Ávila V. Pérez-Dieste Masumichi Seta M. C. Asensio

Thick metallic silver films have been deposited onto $\mathrm{Si}(111)\ensuremath{-}(7\ifmmode\times\else\texttimes\fi{}7)$ substrates at room temperature. Their electronic properties have been studied by using angle-resolved photoelectron spectroscopy (ARPES). In addition to the electronic band dispersion along the high-symmetry directions, the Fermi surface topology of the grown films has been investigated. Using ARPES, the spectral weight distribution at the Fermi level throughout large portions of the reciprocal space has been determined at particular perpendicular electron-momentum values. Systematically, the contours of the Fermi surface of these films reflected a sixfold symmetry instead of the threefold symmetry of the Ag single crystal. This symmetry loss has been attributed to the fact that these films appear to be composed by two sets of domains rotated $60\ifmmode^\circ\else\textdegree\fi{}$ from each other. Extra photoemission features at the Fermi level were also detected, which have been attributed to the presence of surface states and $\mathrm{sp}$-quantum states. The dimensionality of the Fermi surface of these films has been analyzed, studying the dependence of the Fermi surface contours with the incident photon energy. The behavior of these contours measured at particular points along the Ag $\ensuremath{\Gamma}L$ high-symmetry direction puts forward the three-dimensional character of the electronic structure of the investigated films.

Pseudogap

10.1103/physrevb.66.035401

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Citations (9)

Large enhancement of electrical transport properties of SnS in the out-of-plane direction by n-type doping: a combined ARPES and DFT study

Journal of Materials Chemistry A (2018)

Juan Cui Chaoyu Chen Wenke He J. Ávila Li‐Dong Zhao

The resonant states induced by pnictogen dopants and a more delocalized charge density suggest a potential improvement of the thermoelectric performance of SnS.

10.1039/c8ta07090c

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Citations (26)

Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy

Advanced Materials (2018)

Yabin Chen Chaoyu Chen Robert Kealhofer Huili Liu Zhiquan Yuan

2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black phosphorus, for example, is a 2D material that has such in-plane anisotropy. Here, a rare chemical form of arsenic, called black-arsenic (b-As), is reported as a cousin of black phosphorus, as an extremely anisotropic layered semiconductor. Systematic characterization of the structural, electronic, thermal, and electrical properties of b-As single crystals is performed, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). The analysis shows that b-As exhibits higher or comparable electronic, thermal, and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies can potentially implement novel ideas for scientific research and device applications.

10.1002/adma.201800754

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Citations (204)

Local Structure ofNH2onSi(100)−(2×1)and …

Physical Review Letters (1997)

N. Franco J. Ávila M. E. Dávila M. C. Asensio D.P. Woodruff

A scanned-energy mode photoelectron diffraction study of the $\mathrm{Si}(100)\ensuremath{-}(2\ifmmode\times\else\texttimes\fi{}1)$ surface with adsorbed $\mathrm{NH}{}_{2}$ provides quantitative determination of key structural parameters previously only predicted from theoretical calculations. In particular, the $\mathrm{N}$ atoms occupy off-atop sites at a dimerized surface Si atom with N-Si bond lengths of $1.73\ifmmode\pm\else\textpm\fi{}0.08\AA{}$ and bond angle relative to the surface normal of $21\ifmmode^\circ\else\textdegree\fi{}\ifmmode\pm\else\textpm\fi{}4\ifmmode^\circ\else\textdegree\fi{}$. The adsorption greatly reduces the Si dimer asymmetry relative to that of the clean surface.

10.1103/physrevlett.79.673

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Citations (52)

Observation of Γ -Valley Moiré Bands and Emergent Hexagonal Lattice in Twisted Transition Metal Dichalcogenides

Physical Review X (2022)

Ding Pei Binbin Wang Zishu Zhou Zhihai He Liheng An

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moir\'e bands with specific charge distributions in moir\'e superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution ({\mu}-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1{\deg} twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moir\'e bands were observed only at {\Gamma}-valley but not K-valley in {\mu}-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moir\'e length scale associated with the {\Gamma}-valley moir\'e bands. These results not only reveal the unsual valley dependent moir\'e-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the {\Gamma}-valley moir\'e bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales.

Honeycomb

10.1103/physrevx.12.021065

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Citations (26)

Robustness of Momentum-Indirect Interlayer Excitons in MoS₂/WSe₂ Heterostructure against Charge Carrier Doping

ACS Photonics (2023)

Ekaterina Khestanova Tatiana Ivanova Roland Gillen A. D’Elia Oliver Nicholas Gallego Lacey

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly nonradiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultrahigh vacuum conditions. By PL measurements, we identify two interlayer excitons and assign them to the momentum-indirect Q-Γ and K-Γ transitions. The energies of these excitons are in very good agreement with ab initio calculations. We find that the Q-Γ interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration (∼1013 cm–2). Submicrometer angle-resolved photoemission spectroscopy (μ-ARPES) reveals a charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayers without changing the band alignment. This leads to a small (∼10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity for using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.

Trion

Charge carrier

10.1021/acsphotonics.2c01930

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Citations (1)

Nano-ARPES investigation of twisted bilayer tungsten disulfide

arXiv (Cornell University) (2023)

Giovanna Feraco Oreste De Luca Przemysław Przybysz Homayoun Jafari Oleksandr Zheliuk

The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4{\deg}. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions {\Gamma}-K and {\Gamma}-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4{\deg} twist angle, and formation of large, untwisted bilayer regions.

Bilayer graphene

Tungsten disulfide

10.48550/arxiv.2312.04205

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Citations (0)

Growth and magnetic properties of copper on Cu(100)c(2×2)-Mn surface alloy

Surface Science (1999)

Frederik Schiller Yves Huttel J. Ávila M. C. Asensio

Magnetism

10.1016/s0039-6028(99)00135-1

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Citations (10)