Pooja M. Khanzode

Swami Ramanand Teerth Marathwada University

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Kashinath A. Bogle

Swami Ramanand Teerth Marathwada University

Devidas I. Halge

Swami Ramanand Teerth Marathwada University

Vijaykiran N. Narwade

Sanskriti Samvardhan Mandal

Jagdish W. Dadge

Savitribai Phule Pune University

Nabeel M.S. Kaawash

Swami Ramanand Teerth Marathwada University

Mohammed Y.H. Thabit

Swami Ramanand Teerth Marathwada University

Sumayya Begum

Swami Ramanand Teerth Marathwada University

Prashant S. Alegaonkar

Central University of Punjab

S.S. Dahiwale

Savitribai Phule Pune University

Sohel J. Shaikh

Swami Ramanand Teerth Marathwada University

Cooperative Institutions

Swami Ramanand Teerth Marathwada University

Savitribai Phule Pune University

University of Maribor

National Chemical Laboratory

Korea University

Shivaji University

Indian Institute of Technology Bombay

Sanskriti Samvardhan Mandal

SRM University

UNSW Sydney

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Resistive switching characteristics of Pt/TiO2/Al structure under optical illumination

AIP conference proceedings (2020)

Kiran D. More Devidas I. Halge Pooja M. Khanzode Vijaykiran N. Narwade Sumayya Begum

Modulation in resistance switching characteristics of TiO2 thin film fabricated on aluminum substrate is investigated under optical illumination. The average thickness of TiO2 thin film is about 200 nm. The current–voltage characteristics of the Pt/TiO2/Al structure show a good rectifying property with unipolar resistive switching behavior. This resistive switching behavior is observed to be modulated by optical illumination. Photo-carriers generated during optical illumination shifts the set and reset voltage to lower values. This study is helpful for exploring optical effect in metal oxides as multifunctional materials and its applications in non-volatile memory devices.

Reset (finance)

Resistive touchscreen

Modulation (music)

Switching time

10.1063/5.0019620

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Citations (1)

Flexible infrared photodetector based on polyethylene terephthalate (PET) supported lead sulfide thin film

Physica B Condensed Matter (2023)

Mohammed Y.H. Thabit Nabeel M.S. Kaawash Devidas I. Halge Pooja M. Khanzode Vijaykiran N. Narwade

Response time

10.1016/j.physb.2023.415314

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Citations (5)

Spray coated nano-crystalline lead sulfide thin film for photo-detector application

AIP conference proceedings (2020)

Devidas I. Halge Vijaykiran N. Narwade Pooja M. Khanzode Jagdish W. Dadge Abhimanyu Rana

In this paper, we report a photo-detection property of a nano-crystalline lead sulfide (PbS) thin film under infra red light illumination. Nano-crystalline PbS films are fabricated by a spray pyrolysis method on glass substrate, from a aqueous precursor solution at 250 °C. Photo-detector devices are prepared by drawing finger contacts using silver paste on the film. Structural and morphological analysis of the film confirmed the deposition of nano-crystalline PbS film with∼50 nm crystallites and uniform coating of PbS thin film on glass substrate with a surface roughness of∼7.7 nm. The linear I-V measurement performed in dark and under light illumination shows low resistive contact between silver electrode and PbS film. The photo-sensitivity, the response time and the decay time were measured under illumination of PbS film by 100 Watt tungsten lamp. Photo-sensitivity measurements of PbS based photo-detector reveal the excellent sensitivity of∼50 at 10 V. For this photo-detector the best response and decay time is observed to be 36 and 16 ms, respectively. This simple and low cost fabrication method results in a photo-detectors device, which have fast response and decay time.

Lead sulfide

Cadmium sulfide

10.1063/5.0001670

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Citations (3)

Utilization of spray coated nano-crystalline cadmium sulfide thin film for photo-detector application

AIP conference proceedings (2020)

Devidas I. Halge Pooja M. Khanzode Vijaykiran N. Narwade Sumayya Begum Shivaji G. Munde

In this work, we report fabrication of high quality visible light photo-detector based on nano-crystalline cadmium sulfide (CdS) thin film deposited on glass substrate using spray pyrolysis technique. Structural, morphological and chemical analysis of the film confirms uniform coating of sulfur deficient nano-crystalline CdS thin film with∼30 nm crystallites. Finger electrodes were made on the film using Ag paste. Photo-detection property of nano-crystalline CdS thin films was tested under visible light illumination and the response of incident light in terms of photo-current was monitored when exposed at various light intensities ranging from 5 to 320 mW/cm2. The fabricated device showed highly sensitive and repeatable photo-detection at 10 V for low power 5 mW/cm2 light. Time response measurements at different wavelength show ultra-fast response (0.67 ms) and decay (0.86 ms) time and high photo sensitivity at low bias voltage.

Cadmium sulfide

Visible spectrum

Biasing

Lead sulfide

10.1063/5.0019614

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Citations (2)

Highly photoresponsive visible light photodetector using nano PbS thin film on paper

Optik (2020)

Pooja M. Khanzode Devidas I. Halge Vijaykiran N. Narwade Jagdish W. Dadge Kashinath A. Bogle

Photosensitivity

Lead sulfide

10.1016/j.ijleo.2020.165933

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Citations (24)

Development of highly sensitive and ultra-fast visible-light photodetector using nano-CdS thin film

Applied Physics A (2021)

Devidas I. Halge Vijaykiran N. Narwade Pooja M. Khanzode Sumayya Begum Indrani Banerjee

Photosensitivity

Cadmium sulfide

Absorbance

10.1007/s00339-021-04611-9

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Citations (25)

Nano-crystalline CdS thick films: a highly sensitive photo-detector

Materials Research Express (2018)

Shivaji G. Munde Nilesh Shinde Pooja M. Khanzode Maithilee Budrukkar Pooja Lahane

This work reports a simple method for fabrication of highly sensitive photo-detector based on uniform nano-crystalline CdS thick films deposited on glass substrate by spray pyrolysis technique. The presented photo-detector platform contains CdS thick films (3, 6, 9, 12 and 15 μm) and Ag electrode structure. In order to detect incident light signals, changes in electrical signals were measured (conductance and current). For photo-detection, the current response between the 'ON' and 'OFF ' states of incident light was measured when exposed to different wavelengths ranging from 450 to 700 nm. The fabricated device showed significant detection of low-power (∼5 mW cm−2) light for optimized film thickness of 12 μm. Time response measurements at different wavelength show fast response and decay time (25 ms) and high photo sensitivity (1123) at low bias voltage, indicating good quality of the deposited 12 μm thick CdS film.

Ray

Biasing

Response time

10.1088/2053-1591/aac9a5

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Citations (17)

Development of a paper-based wearable UV photo-detector device using ZnO nanostructure

Materials Today Proceedings (2023)

Pooja M. Khanzode Devidas I. Halge Nabeel M.S. Kaawash Mohammed Y.H. Thabit Vijaykiran N. Narwade

Photodetection

10.1016/j.matpr.2023.04.551

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