V. Dmitriev

Pskov State University

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D. Tsvetkov

Peter the Great St. Petersburg Polytechnic University

A. Usikov

ITMO University

V. Ivantsov

Oxford Instruments (United Kingdom)

V. Soukhoveev

Agnitron Technology (United States)

A. S. Zubrilov

Ioffe Institute

Yu. Melnik

Technology Dynamics (United States)

O. V. Kovalenkov

Oxford Instruments (United States)

ИН

И.П. Никитина

Russian State University of Cinematography named after SA Gerasimov

A. L. Syrkin

Oxford Instruments (United States)

A. E. Nikolaev

Ioffe Institute

Cooperative Institutions

Ioffe Institute

Physico-Technical Institute

Russian Academy of Sciences

University of Florida

Texas Tech University

Wolfspeed, Inc. (United States)

DEVCOM Army Research Laboratory

Centre National de la Recherche Scientifique

Cree (China)

Sensors (United States)

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Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

Journal of Applied Physics (2006)

D. Y. Song V. Kuryatkov Madivala G. Basavaraj D. Rosenbladt S. A. Nikishin

We report studies of the morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy. The layers have been grown on c-plane sapphire substrates and epitaxial GaN, Al0.7Ga0.3N, and AlN templates grown on sapphire. InN properties are found to depend on template type with improvement of crystal structure in the template substrate order AlN→AlGaN→GaN. X-ray studies reveal InN layers grown on template substrates to be relaxed with lattice constants a=3.542Å and c=5.716Å. The Raman spectra and optical gaps of the InN layers, vary with free-carrier concentration in agreement with previous studies. We obtain a value of 2.5±0.2 for the index of refraction of InN.

Vapor phase

Template

Lattice constant

10.1063/1.2201856

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Citations (7)

Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2007)

Meredith Reed Eric D. Readinger Paul H. Shen Michael Wraback A. L. Syrkin

Abstract not Available.

10.1149/ma2007-02/26/1327

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Citations (0)

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Materials science forum (2000)

N.I. Kuznetsov Andrey Morozov Д.А. Бауман V. Ivantsov V.A. Sukhoveyev

Liquid phase

10.4028/www.scientific.net/msf.338-342.229

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Citations (4)

Deep ultraviolet photodetectors grown by gas source molecular beam

R. Asomoza Yu. A. Kudryavtsev V. Dmitriev A. Vsikov S. Nikishin

Ultraviolet

Molecular beam

Source

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Deep UV light emitting diodes grown by gas source molecular beam epitaxy

Journal of Materials Science Materials in Electronics (2007)

S. A. Nikishin B. Borisov V. Kuryatkov M. Holtz G. A. Garrett

Cathodoluminescence

10.1007/s10854-007-9405-3

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Citations (9)

GaN Based p-n Structures Grown on SiC Substrates

MRS Internet Journal of Nitride Semiconductor Research (1996)

V. Dmitriev

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

Wide-bandgap semiconductor

10.1557/s1092578300002015

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Citations (31)

Optical Properties of Nitride-based Structures Grown on 6H-SiC

MRS Internet Journal of Nitride Semiconductor Research (1996)

D. Tsvetkov A. S. Zubrilov В. И. Николаев V. A. Soloviev V. Dmitriev

The luminescent properties of AlGaN epitaxial layers with AlN mole fractions up to 30% and various types of AlGaN/GaN-based heterostructures have been studied. The structures were grown on 6H-SiC substrates by MOCVD. The structures' cathodoluminescence and electroluminescence were measured. A “blue” shift of the edge luminescent peak position for AlGaN alloys was measured to be a non-linear function on the AlN mole fraction. For p-AlGaN/n-GaN double heterostructures (DH), the edge peak position was detected at 365 nm (300K). For a p-Al 0.05 Ga 0.95 N/n-Al 0.03 Ga 0.97 N heterostructure, the electroluminescent edge peak was observed at 355 nm (300K). The effects of temperature and forward current on the edge electroluminescence of theAlGaN/GaN DH's were investigated.

Cathodoluminescence

Mole fraction

10.1557/s1092578300002076

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Citations (10)

Recent progress in GaN/SiC LEDs and photopumped lasers

G. E. Bulman J. A. Edmond Hoyoul Kong M. Leonard V. Dmitriev

Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC.

Wide-bandgap semiconductor

Optical Pumping

10.1109/leos.1995.484616

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Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2002)

Grigory Onushkin A. E. Nikolaev А. В. Фомин Oleg Ledyaev A. E. Cherenkov

Photoelectrical properties of AlxGa1–xN epitaxial layers grown by Hydride Vapor Phase Epitaxy (HVPE) have been studied. The layers were grown on 6H-SiC and sapphire (Al2O3) substrates. Composition of AlxGa1–xN layers ranged from 0 mol.% up to 45 mol.% of AlN. The dependence of the energy band gap on the Al content has been studied. According to capacitance–voltage (CV) measurements, the concentration of uncompensated donors increased with the AlN mole fraction. The spectral response of the semitransparent Schottky barriers formed by evaporation of Ni on a Al0.06Ga0.94N HVPE layer demonstrated sharp cut-off with the peak value of 210 mA/W and UV/visible contrast about 104.

Mole fraction

10.1002/pssc.200390089

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Citations (2)

GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

MRS Proceedings (1997)

A. E. Nikolaev Yu. Melnik N.I. Kuznetsov Anatoly M. Strel’chuk A.P. Kovarsky

Vapor phase

10.1557/proc-482-251

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Citations (17)