Toempong Phetchakul

King Mongkut's Institute of Technology Ladkrabang

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Amporn Poyai

National Electronics and Computer Technology Center

Weera Pengchan

King Mongkut's Institute of Technology Ladkrabang

Chana Leepattarapongpan

National Electronics and Computer Technology Center

Chalin Sutthinet

King Mongkut's Institute of Technology Ladkrabang

Charndet Hruanun

National Science and Technology Development Agency

Arckom Srihapat

National Electronics and Computer Technology Center

Wittaya Luanatikomkul

King Mongkut's Institute of Technology Ladkrabang

Wittawat Yamwong

National Electronics and Computer Technology Center

Rattapong Nakachai

King Mongkut's Institute of Technology Ladkrabang

Puttapon Pengpad

National Electronics and Computer Technology Center

Cooperative Institutions

King Mongkut's Institute of Technology Ladkrabang

National Electronics and Computer Technology Center

National Science and Technology Development Agency

Tokai University

Suranaree University of Technology

Synchrotron Light Research Institute

Chiang Mai University

Kyushu Tokai University

Waseda University

Tohoku University

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Magnetotransistor Based on the Carrier Recombination—Deflection Effect

IEEE Sensors Journal (2010)

Chana Leepattarapongpan Toempong Phetchakul Naritchapan Penpondee Putapon Pengpad Ekalak Chaowicharat

This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect vertical and lateral magnetic field direction. The structure of magnetotransistor consists of one emitter, one collector and one base contact. The devices can detect magnetic field by relying on the difference between base current and collector current (¿I _CB ). The result from experiments closely matched the simulated 3-D modeling with base width of 20 ¿m at substrate thickness of 600 ¿m . From the experiment, the magnetotransistor had the highest sensitivity of 10.25%/T when emitter current was at 10 mA. This research on the three-terminal magnetotransistor can achieve magnetic sensors with small size, high performance and wide range of applications.

10.1109/jsen.2009.2033812

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Citations (14)

Contributing parameters for magnetoresistance effect of the new design on Hall plate structure

Toempong Phetchakul P. Taisettavatkul Wittawat Yamwong Amporn Poyai

This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2 × 10 ¹⁵ cm ^-3 , temperature 300 K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2 × 10 ¹⁴ , 2 × 10 ¹⁵ and 2 × 10 ¹⁶ at temperature 200, 250 and 300 K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature.

10.1109/ecticon.2013.6559502

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UV photodetectors from B-doped diamond film

L. Thaiyotin Toempong Phetchakul S. Cheirsirikul S. Supadech

The diamond film synthesized on silicon substrate by hot-filament CVD has been used to fabricate photoconductive and photodiode structures for the detection of UV light. The photoconductive device which the higher boron doped has a greater different response between UV light and visible light more than the lower one, but it has more dark current and response time. The Al Schottky photodiode fabricated on the B-doped diamond film showed lower dark current and shorter response time than photoconductive device.

Photoconductivity

Photodiode

10.1109/tencon.2000.892263

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Citations (2)

Quartz Crystal Microbalance Coated with 18-Crown-6 Ether Film for 2,4,6-Trinitrotolurene (TNT) Vapor Detection

Key engineering materials (2017)

Pavaris Phuvanatai Toempong Phetchakul

The 2, 4, 6-trinitrotoluene (TNT) vapor detection by quartz crystal microbalance (QCM) coated with 18-crown-6 ether film is introduced. The film acts as selective or sensitive layer for detecting TNT molecule. The frequency shift response is depend on the amount of mass of molecule adhere on the coated film surface. In this study, the concentrations of TNT vapor which is related to responses are studied. It shows that the TNT vapor concentration is related to the time for steady state condition and the frequency shift response. The high concentration vapor will increase the frequency shift response but increase the steady state time.

Quartz Crystal Microbalance

Crystal (programming language)

Frequency shift

Trinitrotoluene

10.4028/www.scientific.net/kem.748.358

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Magnetic FinFET (MAGFinFET)

2022 19th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON) (2019)

Chanvit Pamonchom Rattapong Nakachai Chalin Sutthinet Amporn Poyai Toempong Phetchakul

This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.

Lorentz force

Fin

10.1109/ecti-con47248.2019.8955228

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Citations (2)

Forward Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Diodes

Proceedings of the School of Engineering of Tokai University (1997)

Toempong Phetchakul Hideki Kimura Yukio Akiba Tateki Kurosu Masamori Iida

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The low power 3D-magnetotransistor based on CMOS technology

Chana Leepattarapongpan Toempong Phetchakul Naritchaphan Penpondee Puttapon Pengpad Arckom Srihapat

This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B _X , B _Y , and B _Z ) by relying on the difference between base and collector currents (ΔI _CB ). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively.

Biasing

10.1109/icsens.2011.6127079

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The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor

Procedia Computer Science (2016)

Chalin Sutthinet Toempong Phetchakul Wittaya Luanatikomkul Amporn Poyai

This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT-1 at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.

Saturation current

Saturation (graph theory)

10.1016/j.procs.2016.05.038

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MAGFinFET: The Channel Length Effect

Toempong Phetchakul Chanvit Pamonchom Amporn Poyai

This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 10 ¹⁵ cm ^-3 , the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.

Micrometer

Nanometre

Length scale

10.1109/iceast50382.2020.9165345

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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination–deflection effect

Microelectronics Journal (2014)

Chana Leepattarapongpan Toempong Phetchakul Naritchaphan Penpondee Puttapon Pengpad Arckom Srihapat

This article presents a novel magnetotransistor based on carrier recombination–deflection effect for detecting magnetic field in three dimensions (BX, BY, and BZ) by relying on the difference between base and collector currents (∆ICB). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and B−Z direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.

Biasing

Carrier lifetime

10.1016/j.mejo.2014.03.016

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Citations (5)