S. N. Houde-Walter

University of Rochester

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Duncan T. Moore

University of Rochester

P.M. Peters

National Institute of Standards and Technology

R. E. F. Smith

University of Aberdeen

B. L. Olmsted

Laser Operations (United States)

David L. Veasey

National Institute of Standards and Technology

J.M. Inman

University of Rochester

Adele P. Peskin

National Institute of Standards and Technology

B. McIntyre

Sustainable Energy Authority of Ireland

Norman A. Sanford

National Institute of Standards and Technology

Joseph S. Hayden

Intel (United States)

Cooperative Institutions

University of Rochester

National Institute of Standards and Technology

Instituto de Óptica "Daza de Valdés"

Gradient (United States)

Rutherford Appleton Laboratory

Optica

University of Cambridge

Daresbury Laboratory

University of Manchester

National Institute of Standards

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Gradient-Index optical imaging systems

Optics News (1988)

S. N. Houde-Walter

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text Susan Houde-Walter, "Gradient-Index optical imaging systems," Optics News 14(6), 25-26 (1988) Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article

Citation index

10.1364/on.14.6.000025

Cite

Citations (3)

Si-Induced AlGaAs/GaAs Superlaitce Disordering Using a Grown-In Impurity Source and the Effects of Annealing Ambient

MRS Proceedings (1993)

B. L. Olmsted S. N. Houde-Walter

10.1557/proc-300-415

Cite

Citations (0)

Real-Time Index Profile Measurement During Grin Glass Fabrication

S. N. Houde-Walter Duncan T. Moore

Index profile control is essential in the manufacture of GRIN lens blanks. Yet the evolution of the index profile during ion exchange with finite salt melts in some important glass/salt pairs is not well understood at this time. In this paper, we present a technique for monitoring the development of the index profile as it is formed, including the effects arising from concentration dependence, structural changes and time-dependent boundary conditions. The resulting data will contribute to a more precise formulation of the actual conditions that gradient index materials are made in, and lead to better control and repeatability of gradient lens blanks manufactured by ion exchange in glass.

Repeatability

10.1364/giois.1987.fa2

Cite

Citations (0)

Design and Optimization of a Diode-Pumped Fiber-Coupled Yb:Er Glass Waveguide Laser

W. Liu S. N. Houde-Walter David L. Veasey Adele P. Peskin

An adaptive simulated annealing optimization algorithm is used to derive laser rate equation and waveguiding models with which the best design for a diode-pumped fiber-coupled, Yb:Er glass waveguide laser can be determined. Material parameters that correspond to commercially available laser-glass and diode-pump sources are used in this study. Given a continuous-wave 300-mW pump at 977 nm, approximately 48 mW of power at 1540 nm can be coupled into the LP01 mode of an optical fiber. Fabrication and alignment tolerance analyses are presented.

Laser diode

Waveguide

Double-clad fiber

Cite

Citations (0)

Design and optimization of multilayer waveguide devices

Optical Society of America Annual Meeting (1991)

S. N. Houde-Walter

Truly monolithic integration of optoelectronics requires compromises between the individual component and system performances. Design of integrated systems can benefit from the full power of an optimization algorithm, especially in the presence of competing design requirements. Evaluation of the merit function during optimization requires repeated calculation of waveguide modes. Combing the complex plane for solutions to the dispersion relation is too computation-intensive to be practical, particularly for multi-moded and lossy structures, and there is no guarantee that all solutions will be found. Instead, we have demonstrated a numerical technique, based on Cauchy’s integral equation that allows unambiguous identification of all modes in structures with arbitrarily high losses using very short computation times. 1 Further, by plotting the solutions in the complex plane as a function of the square of the complex propagation constant, we observe that the solutions tend to be highly patterned in such a way as to lend insight into the behavior of a wide variety of waveguides.

Lossy compression

Waveguide

Combing

Dispersion relation

Propagation constant

10.1364/oam.1991.mcc2

Cite

Citations (0)

Leaky guiding in nontransparent waveguides

Journal of the Optical Society of America A (1995)

R. E. F. Smith S. N. Houde-Walter

The ways in which eigenmode expansions describe nonbound fields are compared and used to understand leaky guiding in nontransparent waveguides. Accurate modeling of leaky behavior is seen to be quite different in the cases of absorption and gain.

Eigenmode expansion

Leaky mode

Guided-mode resonance

10.1364/josaa.12.000715

Cite

Citations (12)

Cation microsegregation and ionic mobility in mixed alkali glasses

Nature (1992)

B. Vessal G. N. Greaves P. T. Marten A. V. Chadwick Richard A. Mole

XANES

10.1038/356504a0

Cite

Citations (162)

Glass : the World's Best Optical Material

한국광학회 학술대회논문집 (2005)

S. N. Houde-Walter

Source

Cite

Citations (0)

Dependence of Interdiffusion in AlGaAs on Stoichiometry between Ga-RICH and As-Rich Solidus Limits

MRS Proceedings (1991)

B. L. Olmsted S. N. Houde-Walter R. E. Viturro

Cathodoluminescence

Solidus

Crystal (programming language)

Stoichiometry

10.1557/proc-240-721

Cite

Citations (1)

Vacancy-mediated disordering of AlGaAs-GaAs superlattices by group IV or VI impurity in-diffusion

Applied Physics Letters (1993)

B. L. Olmsted S. N. Houde-Walter

We report on a study of disordering by the in-diffusion of a variety of group IV and VI n-type impurities. In all cases, the n-type dopants enhance the Al-Ga interdiffusion coefficient over that due to the As overpressure alone. The Si-induced enhancement has been previously attributed to the change in the Fermi-level position with doping and therefore, should account for disordering using other n-type impurities. However, we observe important differences in the interdiffusion characteristics induced by Si or Ge, and that by S or Se. The disordering is attributed to the enhancement in the group III-vacancy concentration for each of these n-type impurities, as is also the case in undoped crystals disordered by an As ambient alone at 855 °C.

10.1063/1.108625

Cite

Citations (2)