Kentaro Setsune

Panasonic (Japan)

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Kiyotaka Wasa

Institute of Acoustics

104

Hideaki Adachi

Kobe University

Yo Ichikawa

Nagoya Institute of Technology

K. Wasa

Hosei University

Kumiko Hirochi

Takamatsu University

Kazunori Mizuno

Takushoku University

H. Adachi

Okayama University of Science

Shigemi Kohiki

Kyushu Institute of Technology

Takeshi Kamada

Cardiovascular Center Hokkaido Ohno Hospital

Akira Enokihara

University of Hyogo

Cooperative Institutions

Panasonic (Japan)

The University of Tokyo

Panasonic (China)

Kyoto University

Osaka University

Central Research Laboratories (United Kingdom)

Tohoku University

Japan Science and Technology Agency

National Institute of Advanced Industrial Science and Technology

Tokyo Institute of Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Properties of Hydrogenated Amorphous Silicon Prepared by ECR Plasma CVD Method

Japanese Journal of Applied Physics (1988)

Masatoshi Kitagawa Kentaro Setsune Yoshio Manabe Takashi Hirao

Hydrogenated amorphous silicon (a-Si:H) films were prepared by the microwave electron-cyclotron-resonance (ECR) plasma CVD method using SiH 4 gas without intentional substrate heating. The influence of the deposition conditions in the ECR plasma CVD method on the properties of a-Si:H films was studied and the properties were correlated with plasma optical emission spectra of similar deposition conditions. Photoconductivity of ∼10 -6 (Ω cm) -1 under simulated AM1 (100 mW/cm 2 ) illumination was obtained for the as-grown film with an optical gap of ∼2.1 eV at the SiH 4 gaspressure of 2×10 -4 Torr. The photoconductivities, the optical gaps and the B values estimated from optical absorption measurements were widely changed when SiH 4 gas pressure condition was changed. Infrared absorption spectra also showed that the Si-H 2 stetching mode at ∼2100 cm -1 and (Si-H 2 ) n wagging mode at ∼845 cm -1 increased as SiH 4 gas pressure increased. Measurements of optical emission spectra in the SiH 4 ECR plasma showed that the emission intensity ratio of Si (288 nm) to SiH (414 nm) was larger than that in conventional RF plasma CVD, and that the photoconductivities and optical gaps increased as this ratio increased.

Electron cyclotron resonance

Photoconductivity

10.1143/jjap.27.2026

Cite

Citations (35)

Optical properties of Nd2−xCexCuO4 thin films

Physica C Superconductivity (1989)

Kumiko Hirochi Shigenori Hayashi H. Adachi Tsuneo Mitsuyu Takashi Hirao

Drude model

Reflection

10.1016/0921-4534(89)90061-0

Cite

Citations (35)

Characteristics of intrinsic tunnel junctions on Bi-2223 thin films

Applied Superconductivity (1998)

A. Odagawa Masahiro Sakai H. Adachi Kentaro Setsune

10.1016/s0964-1807(98)00075-1

Cite

Citations (0)

Microstructures of Sputtered PbTiO3 Thin Films.

Hyomen Kagaku (1995)

Toshifumi Satoh Kiyotaka Wasa Yoko Haneda Kenji Tabata Hideaki Adachi

Ultrathin stoichiometric PbTiO3 films, 10∼100nm thick, were deposited on (001)SrTiO3 and miscut (001)SrTiO3 substrates at 600°C by rf planar magnetron sputtering to understand the microstructure of initial film growth. The electron microscopy and X-ray diffraction analysis suggested the epitaxial growth of (001)PbTiO3/(001)SrTiO3 with three dimensional crystal orientation, however the PbTiO3 films still included crystal boundaries. Deposition on a miscut (001)SrTiO3 substrate under stoichiometric conditions reduced the crystal boundaries and provided continuous ultrathin films of single crystal PbTiO3.

Stoichiometry

Crystal (programming language)

10.1380/jsssj.16.410

Cite

Citations (0)

Preparation and Characterization of Superconducting Y-Ba-Cu-O Thin Films

Japanese Journal of Applied Physics (1987)

Hideaki Adachi Kentaro Setsune Tsuneo Mitsuyu Kumiko Hirochi Yo Ichikawa

Thin films of Y-Ba-Cu-O system have been prepared by rf-magnetron sputtering technique. The films were crystallized through post annealing and superconductivity was appeared. The film on R-plane of sapphire showed superconducting transition with an onset temperature at 94 K and zero-ρ state was achieved below 70 K.

Superconducting transition temperature

Transition temperature

10.1143/jjap.26.l709

Cite

Citations (54)

Layered Type Josephson Junctions Using a Bi-Based High-T<sub>c</sub> Superconductor

Materials science forum (1993)

Kazunori Mizuno Kentaro Setsune

10.4028/www.scientific.net/msf.137-139.693

Cite

Citations (0)

Effect of annealing in oxygen on the structure formation of Bi-Sr-Ca-Cu-O thin films

Physical review. B, Condensed matter (1989)

Shigemi Kohiki Kumiko Hirochi H. Adachi Kentaro Setsune K. Wasa

The structure, bonding, and ${T}_{c}$ of Bi-Sr-Ca-Cu-O superconducting films, prepared by rf magnetron sputtering, changed systematically upon varying the annealing conditions in oxygen. The spacing between the double Bi-O layers decreased from 22 to 18 A\r{} and the degree of c-axis orientation became higher with the annealing. No change in the Bi core-level electron spectra with the annealing was observed. The Cu core-level electron spectra indicated an increase of the Cu valence with the annealing. The core-level electron spectra of Sr and Ca showed the possibilities of random distribution of the Ca and Sr atoms between the double Bi-O layers prior to annealing and exchanging their lattice sites in the ${\mathrm{Bi}}_{2}$${\mathrm{Sr}}_{2}$${\mathrm{Ca}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{\mathit{y}}$ crystal structure after annealing. The zero-resistance temperature of the films was 10 K before annealing, and rose up to 96 K (midpoint 105 K) after annealing. The annealing favors both oxidation of Cu and ordering of Sr and Ca atoms within the unit cell of the 2:2:2:3 crystal structure.

10.1103/physrevb.39.4695

Cite

Citations (17)

Substitution Effect of Rare Earth Elements for Y in Pb-Sr-Y-Ca-Cu-O with “1212” Structure

Japanese Journal of Applied Physics (1991)

Seiji Adachi Hideaki Adachi Kentaro Setsune Kiyotaka Wasa

The superconducting transition temperature ( T c ) and lattice constants of “1212” lead cuprate, (Pb/Cu)Sr 2 (Ln/Ca)Cu 2 O z (Ln=Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu and Y), were investigated. (Pb 0.75 Cu 0.25 )Sr 2 (Ln 0.4 Ca 0.6 )Cu 2 O z ceramics were prepared by sintering at 1000°C for 1 h in oxygen. Obtained ceramics were annealed at 800°C for 24 h in oxygen and subsequently quenched. Linear correlation between lattice constants and ionic radii of Ln was observed in the “1212” phases. The T c value increased with decreasing ionic radii of Ln. The Ln=Lu sample exhibited a T c (zero resistivity) of 61 K in our oxperiments.

Ionic radius

Lattice constant

Transition temperature

Superconducting transition temperature

10.1143/jjap.30.l1099

Cite

Citations (14)

Low-temperature process for the preparation of high T c superconducting thin films

Applied Physics Letters (1987)

Hideaki Adachi Kumiko Hirochi Kentaro Setsune Makoto Kitabatake Kiyotaka Wasa

We have established the low-temperature process for the preparation of high Tc superconducting films by rf magnetron sputtering. The films were deposited at a temperature (650 °C) lower than the tetragonal-orthorhombic transition point with sufficient crystallizing and oxidizing conditions. The as-deposited Er-Ba-Cu-O film on MgO exhibited a sharp superconductive transition with zero resistance at 86 K. This process prevented diffusion at the film and substrate interface and reduced the porous structure in the films.

Tetragonal crystal system

Orthorhombic crystal system

Transition temperature

Oxidizing agent

10.1063/1.98904

Cite

Citations (133)

Growth and microstructures of sputtered ferroelectric PbTiO₃ thin films

Integrated ferroelectrics (1996)

Kiyotaka Wasa Toshifumi Satoh Hideaki Adachi Kentaro Setsune

Abstract PbTiO3 thin films, 5–200 nm in thickness, were epitaxially growth on miscut (001) SrTiO3 substrates by planar magnetron sputtering for understanding of film growth mechanism and their ferroelectricity. The surface of the miscut substrates with miscut angle of 1.7 degree contains periodic step lines and terraces; the step height is 0.4 nm and terrace width is 14 nm. The surface structures of PbTiO3 films comprised periodic striped patterns which was reflected in the initial surface of the substrate. It was found that under a stoichiometric film composition the film growth was governed by Frank-van der Merwe type and resultant epitaxial films showed extremely smooth surface. Deposition on a miscut substrate under a stoichiometric condition is essential to making the uniform ferroelectric thin films. Key Words: keywords: EpitaxyPbTiO3 thin filmsmiscut substratessputtering

10.1080/10584589608013052

Cite

Citations (1)