DING XUN-MIN

Fudan University

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PROPERTIES OF GaS GROWN BY MICROWAVE-GLOW DISCHARGE

Acta Physica Sinica (1997)

Xiying Chen CAO XIAN-AN DING XUN-MIN HOU XIAO-YUAN Chen Liang-Yao

A novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Auger electron spectroscopy and Rutherford back scattering measurements show that the film is mainly composed of sulfur and gallium,and atomic ratio of gallium to sulfur is about 1∶1.From X-ray diffraction spectroscopy measurememt,GaS is identified to be hexagonal polycrystalline material.The refraction index and dielectric constant of GaS have also been determined.

Auger electron spectroscopy

Glow discharge

10.7498/aps.46.826

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Dangling bond electronic state on an InP surface

Surface Science Letters (1987)

X. Y. Hou Guosheng Dong DING XUN-MIN Xun Wang

Dangling bond

10.1016/0167-2584(87)90145-9

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NITRIDATION OF K/GaAs(100) SURFACES

Acta Physica Sinica (1998)

HU HAI-TIAN LAI BING YUAN ZE-LIANG DING XUN-MIN HOU XIAO-YUAN

Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.

10.7498/aps.47.1041

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A POSSIBLE SURFACE ATOMIC STRUCTURE MODEL OF InP (100) (4×2) RECONSTRUCTION

Acta Physica Sinica (1987)

HOU XIAO-YUAN DONG GUO-SHENG DING XUN-MIN Xun Wang

The InP(l00) (4×2) reconstructed surface prepared by argon ion bombardment and post annealing under phosphorus pressure has been investigated by LEED, HREELS and UPS. It was found by HREELS that the forming of surface In-H and P-H bonds during hydrogen exposure happened almost simultaneously. By measuring the UP spectra using polarized light sources, it can be verified that the dangling bond states of surface P atoms do not possess the symmetrical characteristic with respect to the two basis vector directions of surface unit mesh. It could be deduced from the above evidences that there must exist some In vacancies on the In-rich InP (100) surface, and the dangling bonds of those P atoms which are located next to the In vacancies orientate off their normal directions. We propose here a missing row-dimer model for the atomic arrangement of InP (100) (4×2) stucture, which could explain the observed experimental qualitatively and might be used as a working model for seeking a precise surface structural model.

Dangling bond

Surface reconstruction

Surface structure

10.7498/aps.36.1148

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THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE

Acta Physica Sinica (1983)

XU YA-BUO DONG GUO-SHENG DING XUN-MIN Yang Shu Xun Wang

The ultraviolet photoelectron spectroscopy of GaAs (100) surface (4×1) structure has been measured by using a polarized UV light source. From the differential spectra between the UPS of the clean surface and the surface with adsorbed oxygen, the surface state peak located within 2eV below valence band maximum could be identified. According to the spectra obtained with s- and p-polarized light and the selection rule of electron transition, it could be shown that this surface state cosists of three peaks: the peak at 0.5eV below valence band maximum corresponding to the bridge bond states of surface Ga atoms, the peak at 0.7eV resulting from the bridge bond states of surface As atoms, and the peak at 1.3eV related to the dangling bond states.

Dangling bond

Ultraviolet photoelectron spectroscopy

Surface States

10.7498/aps.32.1339

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A NEW METHOD FOR POST TREATMENT OF POROUS SILICON:SULFUR PASSIVATION BY MICROWAVE PLASMA ASSISTANCE

Acta Physica Sinica (1997)

Xiaobing Liu Xiong Zu-Hong YUAN SHUAI LIAO LIANG-SHENG He Jun

A new method for post-treatment of PS(porous silicon), sulfur passivation by microwave plasma assistance in vacuum,is reported in this paper.Fourier transform infrared spectrum indicated that the treated sample surface is mainly covered by SiSx and SiOy.Compared with the as etched PS,the photoluminescence (PL) intensity of the sample is 3.5 times stronger,and the 4nm blueshift of the PL peak was observed experimentally;furthermore,the intensity decay of the PL peak hasnot been observed after 60d in the atmosphere.Therefore,sulfur passivation is an effective post treatment for enhancing PL intensity and stabilization of PS.

Passivation

Porous Silicon

Blueshift

Intensity

10.7498/aps.46.2059

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INITIAL STAGE OF OXYGEN ADSORPTION ON GaP(111) SURFACES

Acta Physica Sinica (1990)

XIAO HAN-YU LU XUE-KUN DONG GUO-SHENG DING XUN-MIN Chen Ping

A number of surface analysis techniques, including XPS, UPS and HREELS, are used to study oxygen adsorption on GaP(111) surfaces.Initial oxygen adsorption is found to be saturated at an exposure around 104L. Information concerning surface electron structure variation in this stage, such as surface band bending, chemical shifts, etc. has been obtained. It is found that this stage of oxygen adsorption is related to surface defects. Proper annealing treatment can remove the surface defects along with the adsorbed oxygen. Such oxygen adsorption followed by annealing might be a way for defect removal in surface engineering.

Band bending

10.7498/aps.39.1665

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STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON

Acta Physica Sinica (1998)

Xiaobing Liu Xiong Zu-Hong YUAN SHUAI CHEN YAN-DONG He Jun

The temperature dependence of photoluminescence (PL) in porous silicon has been investigated. It is found that the PL peak from the low porosity samples shows a red shift with decreasing temperature, but the blue shift of the PL peak is always observed in the high porosity samples. The temperature dependence of the PL peak shift observed experimentally can be qualitatively explained by the simulated curves of the luminescent efficiency versus wavelength.

Porous Silicon

Blueshift

Red shift

10.7498/aps.47.1391

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TEMPERATURE EFFECTS ON THE INTERACTION BETWEEN P AND GaAs(lOO) SURFACE

Acta Physica Sinica (1992)

LU XUE-KUN HAO PING-HAI HE ZHONG-QING HOU XIAO-YUAN DING XUN-MIN

Temperature effects on interaction between P and GaAs (100) surface have been studied by in-situ X-ray photoemssion, uhra violet photcemission, high resolution electron energy loss specrroscopy and low energy electron diffraction techniques. The results show that annealing will make most of the amorphous P, which are deposited on GaAs(lOO) surface at room temperature, desorb with some randomly distributed P-clusters left on the surface. In these clusters, some of the P atoms are bonded to the Ga atoms of the substrate, others exist in the form of element. Higher temperature annealing will make all the left P atoms interact with the substrate and form GaAsP thin layer. Film of GaAsP solid solution will be obtained when depositing P on high temperature GaAs substrate. This film is suggested to be a promissing passi-vating film for GaAs surface.

Low-energy electron diffraction

10.7498/aps.41.1728

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PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES

Acta Physica Sinica (1992)

LU XUE-KUN HOU XIAO-YUAN DONG GUO-SHENG DING XUN-MIN

The room temperature deposited α-P/GaAs(100) interfaces have been studied by XPS, UPS, and LEED. The results show that P is adsorbed as clusters on the surface of GaAs at the initial stage of the interface formation, α-P film is formed as the deposition amount is further increased. The valence structures of the films so obtained are similar to those of plasma deposited α-P:H films. There are about one monolayer of P atoms bonded to Ga atoms of the substrate at the interface, α-P overlayer results in 0.2 eV lowering of GaAs surface barrier.

Overlayer

10.7498/aps.41.689

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