Dominique Tournier

Laboratoire Ampère

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Dominique Planson

Laboratoire Ampère

Philippe Godignon

Institut de Microelectrònica de Barcelona

Pierre Brosselard

Université Claude Bernard Lyon 1

Mihai Lazar

Centre de Nanosciences et de Nanotechnologies

Pascal Bevilacqua

Université Claude Bernard Lyon 1

Christophe Raynaud

Institut National des Sciences Appliquées de Lyon

José del R. Millán

The University of Texas at Austin

Hervé Morel

Laboratoire Ampère

J. Montserrat

Institut de Microelectrònica de Barcelona

Bruno Allard

Centre National de la Recherche Scientifique

Cooperative Institutions

Centre National de la Recherche Scientifique

172

Université Claude Bernard Lyon 1

106

Institut National des Sciences Appliquées de Lyon

Laboratoire Ampère

École Centrale de Lyon

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Université Grenoble Alpes

Institut polytechnique de Grenoble

CEA Grenoble

Laboratoire de Génie Électrique de Grenoble

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Performance of commercial SOI driver in harsh conditions (up to 200°C)

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) (2010)

Khalil El Falahi Bruno Allard Dominique Tournier Dominique Bergogne

Power electronics based on wide band gap materials, such as silicon carbide (SiC) or gallium nitride (GaN), are nowadays capable of operation at increased ambient temperatures. High Temperature Intelligent Power Modules are unfortunately not available due to a lack of integrated driver able to withstand either harsh environment or enhanced junction temperature due to reduction in the cooling system. The most appropriated technology for such a driver seems to be Silicon on Insulator (SOI). The maximum operating temperature of commercial SOI devices with conventional packaging is usually 150°C up to 175°C as specified by manufacturers. In this paper, we actually try to observe the performance and de-ratings of these SOI circuits at temperatures above 175°C. Experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond is presented. Parameters such as output current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based core-driver with the necessary functionalities to drive an inverter up to 220°C ambient temperature.

Gate driver

10.4071/hitec-kelfalahi-ta23

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Citations (1)

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE Transactions on Industrial Electronics (2014)

Mihaela Alexandru V. Banu X. Jordà J. Montserrat M. Vellvehı́

This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip. Also, we report for the first time the functionality of standard Si-CMOS topologies on SiC for the master-slave data flip-flop (FF) and data-reset FF digital building blocks designed with MESFETs. Concretely, we present the complete development of SiC-MESFET IC circuitry, able to integrate gate drivers for SiC power devices. This development is based on the mature and stable Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

MESFET

Power Electronics

10.1109/tie.2014.2379212

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Citations (56)

Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment

Diamond and Related Materials (2004)

R. Pérez N. Mestres Dominique Tournier Philippe Godignon José del R. Millán

Ohmic contact

Metal–semiconductor junction

10.1016/j.diamond.2004.11.015

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Citations (47)

Failure analysis of ESD-stressed SiC MESFET

Microelectronics Reliability (2015)

Tanguy Phulpin D. Trémouilles Karine Isoird Dominique Tournier Philippe Godignon

MESFET

Zener diode

Robustness

Failure mechanism

10.1016/j.microrel.2015.06.121

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Citations (4)

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel

Materials science forum (2016)

Shi Qin Niu Maxime Berthou Dominique Tournier

The static characteristics and short-circuit capabilities of SIT (Static Induction Transistor) depend strongly on its channel design. Analysis show that the doping concentration and the width of the channel are crucial parameters in determining the specific on-resistance, threshold voltage and saturation capabilities of the device. Classically SIT is designed with a uniformly doped channel. Improving the saturation capability of such a device comes along with increasing its on resistance. This drawback can be overcome by using non-uniformly doped channel. This paper shows that this technique achieves a 12.3% decrease in saturation current without changing its on-resistance compared to uniformly doped channel case. This result allows a significant increase of 31% in terms of short-circuit withstanding time of SIT.

Saturation (graph theory)

Saturation current

Channel length modulation

10.4028/www.scientific.net/msf.858.925

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Citations (1)

Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium

HAL (Le Centre pour la Communication Scientifique Directe) (2014)

Besar Asllani Shiqin Niu Patrick Denis Maxime Berthou Dominique Tournier

Ce travail de recherche propose une approche nouvelle de modelisation de diodes Schottky/JBS en carbure de silicium en employant la seule equation de Shockley comme terme generique d'un modele electrique multi-branches. La fonction de Lambert est utilisee pour s'affranchir du caractere implicite de cette equation. In fine, des parametres - dits phenomenologiques - sont determines afin de reconstruire la caracteristique IVT en dessous et au dessus du seuil avec un facteur de qualite convaincant. Deux cas sont traites, celui d'une diode Schottky SiC avec interface en Tungstene stable, et celui de diodes Schottky et JBS avec interface en Nickel issues de procedes de conception/fabrication en cours de developpement. Les resultats obtenus permettent de discuter de la maturite/qualite de l'interface metal/semiconducteur etudiee et des possibles mecanismes de conduction a l'oeuvre. Enfin, le modele phenomenologique presente aussi un interet en terme de simulations electriques.

Source

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Citations (0)

Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization

Christophe Raynaud Duy‐Minh Nguyen Nicolas Dheilly Dominique Tournier Pierre Brosselard

This chapter contains sections titled: Introduction Theory and principle of OBIC: calculation of the current Description of the experimental set-up Study of device termination technique Determination of carrier lifetime Determination of ionization coefficients Conclusion References

Characterization

10.1002/9783527629053.ch12

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Citations (1)

State of the art of high temperature power electronics

Materials Science and Engineering B (2010)

Cyril Buttay Dominique Planson Bruno Allard Dominique Bergogne Pascal Bevilacqua

Power Electronics

10.1016/j.mseb.2010.10.003

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Citations (353)

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Materials science forum (2007)

Christophe Raynaud Daniel Loup Philippe Godignon Raúl D. Rodriguez Dominique Tournier

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

PIN diode

High Voltage

10.4028/www.scientific.net/msf.556-557.1007

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Citations (2)

Digital control strategies for switch-mode power supply

Proceedings of the Annual Conference of the IEEE Industrial Electronics Society (2006)

Xuefang Lin-Shi Bruno Allard Dominique Tournier Jean-Marie Rétif Florent Morel

Analogue control of monolithic DC/DC converters is coming to a limit due to high switching frequency and a request for large regulation bandwidth. Digital control is now experimented for low-power low-voltage switch-mode power supply. Digital implementation of analogue solutions does not prove real performances. Other digital controllers have been experimented but applied to discrete converters. This paper compares a classical digital controller to a possible alternative strategy. Sensitivity functions are used to compare controller performances. RST algorithm determined by robust pole assignment shows better performances

Digital Control

Mode (computer interface)

Direct digital control

10.1109/iecon.2006.347547

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Citations (7)