C. Quaresima

Institute of Structure of Matter

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Co-Authors

P. Perfetti

Institute of Structure of Matter

110

C. Ottaviani

Institute of Structure of Matter

Paola De Padova

Institute of Structure of Matter

M. Capozi

Institute of Structure of Matter

Bruno Olivieri

Institute of Atmospheric Sciences and Climate

G. Margaritondo

École Polytechnique Fédérale de Lausanne

F. Patella

University of Rome Tor Vergata

G. Le Lay

Physique des interactions ioniques et moléculaires

A. Savoia

Elettra-Sincrotrone Trieste S.C.p.A.

K. Hricovíni

CY Cergy Paris Université

Cooperative Institutions

Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati

234

Istituto Nazionale di Fisica Nucleare

200

Sapienza University of Rome

129

Institute of Structure of Matter

National Agency for New Technologies, Energy and Sustainable Economic Development

Centre National de la Recherche Scientifique

University of Rome Tor Vergata

Istituto Nazionale di Fisica Nucleare, Sezione di Roma I

Istituto Nazionale per la Fisica della Materia

AREA Science Park

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Multilayer Silicene: a clear evidence

arXiv (Cornell University) (2016)

Paola De Padova Amanda Generosi Barbara Paci C. Ottaviani C. Quaresima

One year after the publication of the seminal paper on monolayer 3 by 3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial root3 by root3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter one, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study, that multilayer silicene is effectively realized upon growth at rather low growth temperatures (~200{\deg}C), while, instead, 3D growth of silicon crystallites takes place at higher temperatures, (~300{\deg}C). This transition to bulk like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.

10.48550/arxiv.1606.05919

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Citations (0)

Low energy electron loss spectroscopy of Si–Ge interfaces

Journal of Vacuum Science and Technology (1981)

P. Perfetti S. Nannarone F. Patella C. Quaresima F. Cerrina

We present energy loss spectra of Si–Ge heterojunctions. The early stage of formation of the interface has been studied by successive evaporations of small amounts of germanium on a silicon substrate heated at 350 °C. The results, compared with theoretical calculations, show that the interface is abrupt on a microscope scale and that germanium induces extrinsic interface states in the main and partial gaps of the projected bulk band structure of silicon on the (111) surface.

Silicon-germanium

10.1116/1.571056

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Citations (20)

Magnetic and structural properties of Mn/InSb(001)

Journal de Physique IV (Proceedings) (2006)

M. Zerrouki Paola De Padova C. Quaresima P. Perfetti Manuel Richter

10.1051/jp4:2006132030

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Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

Acta Physica Polonica A (1995)

B. Adamowicz C. Ottaviani C. Quaresima P. Perfetti

We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n-and p-doped InP substrates.The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.

Surface Photovoltage

10.12693/aphyspola.88.663

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Conceptual design of a high-brightness linac for soft X-ray SASE-FEL source

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (2003)

D. Alesini S. Bertolucci M.E. Biagini C. Biscari R. Boni

Conceptual design

10.1016/s0168-9002(03)00905-7

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Citations (14)

IRIDE : an interdisciplinary researchinfrastructure based on dual electron linacs&lasers : a white book

D. Alesini M. Alessandroni M. P. Anania S. Andreas M. Angelone

White paper

White (mutation)

Source

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Citations (0)

Natural hybrid organic–inorganic photovoltaic devices

Superlattices and Microstructures (2009)

Paola De Padova M. Lucci Bruno Olivieri C. Quaresima S. Priori

Photocurrent

10.1016/j.spmi.2009.03.005

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Citations (10)

Multilayer silicene: clear evidence

2D Materials (2016)

Paola De Padova Amanda Generosi Barbara Paci C. Ottaviani C. Quaresima

One year after the publication of the seminal paper on monolayer 3 × 3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial √3 × √3 reconstructed multilayer silicene hosting Dirac fermions was presented. Although a general consensus was immediately reached in the former case, in the latter, the mere existence of multilayer silicene was questioned and strongly debated. Here, we demonstrate by means of a comprehensive x-ray crystallographic study that multilayer silicene is effectively realized upon growth at rather low growth temperatures (∼200 °C), while three-dimensional growth of silicon crystallites takes place at higher temperatures, (∼300 °C). This transition to bulk-like silicon perfectly explains the various data presented and discussed in the literature and solves their conflicting interpretations.

10.1088/2053-1583/3/3/031011

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Citations (48)

Dipole-Induced Changes of the Band Discontinuities at the SiO2-Si Interface

Physical Review Letters (1986)

P. Perfetti C. Quaresima C. Coluzza C. Fortunato G. Margaritondo

We prove experimentally that the band lineup at the Si${\mathrm{O}}_{2}$-Si interface can be modified by means of an intralayer. Hydrogen and cesium intralayers produce modifications of 0.5 and 0.25 eV in opposite directions. Possible explanations of these dramatic changes are discussed.

Classification of discontinuities

10.1103/physrevlett.57.2065

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Citations (114)

Electronic properties of the GeAu interface compound studied with low-energy-electron-loss-spectroscopy

Solid State Communications (1982)

C. Quaresima F. Sette F. Patella A. Savoia P. Perfetti

Stoichiometry

Electron spectroscopy

Low energy

Deposition

10.1016/0038-1098(82)91077-8

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Citations (5)