J.B. Boos

United States Naval Research Laboratory

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B. R. Bennett

Virginia Tech

107

W. Kruppa

United States Naval Research Laboratory

Mario G. Ancona

Centro de Investigación y Proyectos en Ambiente y Desarrollo

N. A. Papanicolaou

United States Naval Research Laboratory

Daeui Park

Kyungpook National University

Robert B. Bass

Portland State University

R. Magno

United States Naval Research Laboratory

Dale McMorrow

United States Naval Research Laboratory

James G. Champlain

United States Naval Research Laboratory

Krishna C. Saraswat

Stanford University

Cooperative Institutions

United States Naval Research Laboratory

123

Northrop Grumman (United States)

K Lab (United States)

Naval Research Laboratory Electronics Science and Technology Division

Pennsylvania State University

United States Navy

Redondo Optics (United States)

University of Maryland, College Park

Stanford University

Optical Sciences (United States)

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Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors

Ze Yuan Aneesh Nainani B. R. Bennett J.B. Boos Mario G. Ancona

Despite burgeoning interest in III-V's for realizing high performance transistors at low power, III-V MOSFEts have been plagued by poor PMOS performance. Realizing high mobility InGaAs PMOS [1] and Ge NMOS [2] has proven to be difficult. To avoid complications in CMOS circuit design and manufacturing [3], it is favorable to employ a single material system that enables both good NMOS and PMOS transistors. We chose to work on the 6.1-6.2Å lattice constant system with InGaSb as the channel material because of its advantages in terms of band engineering and high mobility/offsets for both electrons and holes [4-5].

Electron Mobility

10.1109/isdrs.2011.6135272

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Citations (4)

Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications

2011 IEEE MTT-S International Microwave Symposium (2007)

Yeong-Chang Chou J.M. Yang Chu-Hsu Lin J. Lee M. Lange

This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology warrants the successful insertion of AlSb/InAs HEMT MMICs for military and space applications with ultra-low power requirements.

Indium gallium arsenide

10.1109/mwsym.2007.380488

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Citations (14)

Low-voltage, high-speed AlSb/InAsSb HEMTs

Electronics Letters (1999)

J.B. Boos M. J. Yang B. R. Bennett Daeui Park W. Kruppa

Antimonide-based HEMTs have heen fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 µm gate length exhibit decreased output conductance and improved voltage gain. At VDS = 0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6.

Transconductance

Antimonide

10.1049/el:19990536

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Citations (26)

Recent advances in AlSb/InAs HEMTs for high-speed electronics

J.B. Boos B. R. Bennett Mario G. Ancona W. Kruppa D. Park

Future high-speed receiver and logic applications that require lightweight power supplies, long battery lifetime, improved efficiency, or high component density will require transistors that consume less power. AlSb/InAs HEMTs have intrinsic advantages for these high-speed, low-power-consumption applications due to the attractive material properties of this heterojunction material system that include high values of mobility, channel conductivity, and peak electron velocity at low electric field. For example, intrinsic f/sub T/ values of 250 GHz have been obtained at V/sub DS/=600 mV and an f/sub T/ of 90 GHz has been measured at V/sub DS/=100 mV. Furthermore, simulations of logic circuits that combine the HEMTs with resonant tunneling diodes show a power dissipation of only 0.3 mW/gate at 20 Gb/s when biased at 400 mV. The potential payoffs associated with this material system are, however, dependent on further improvements in the technology. In this talk, the current status of the design, fabrication, and characterization of Sb-based HEMTs at NRL will be presented including 1/f noise characterization, the use of an InAsSb channel and a TiW/Au gate metalization, and their integration with RITDs.

10.1109/isdrs.2001.984577

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Enhancing hole mobility in III-V semiconductors

Journal of Applied Physics (2012)

Aneesh Nainani B. R. Bennett J.B. Boos Mario G. Ancona Krishna C. Saraswat

Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has always lagged compared to group-IV semiconductors such as germanium. In this paper, we explore the use of strain and heterostructure design guided by bandstructure modeling to enhance the hole mobility in III-V materials. Parameters such as strain, valence band offset, effective masses, and splitting between the light and heavy hole bands that are important for optimizing hole transport are measured quantitatively using various experimental techniques. A peak Hall mobility for the holes of 960 cm2/Vs is demonstrated and the high hole mobility is maintained even at high sheet charge.

Electron Mobility

Band offset

Charge carrier

10.1063/1.4718381

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Citations (38)

Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors

International Electron Devices Meeting (2010)

Ahmed I. Ali Himanshu Madan Rajiv Misra Eunju Hwang Ashish Kumar Agrawal

This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al ₂ O ₃ -1.0 nm GaSb) with a mixed anion InAs _0.8 Sb _0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <;10 ^-7 A/cm ² gate leakage (ii) low D _it interface (~1×10 ¹² /cm ² /eV) (iii) high drift μ of 3,900-5,060 cm ² /V-s at N _S of 5×10 ¹¹ -3×10 ¹² /cm ² . The InAs _0.8 Sb _0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) g _m of 334 (502) μS/μm and drive current of 380 μA/μm at V _DS = 0.5V for Lg=1μm.

10.1109/iedm.2010.5703308

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Citations (12)

Diffusion-drift modeling of carbon-based nanowire FETs

Mario G. Ancona J.B. Boos

Continuum models of transport in carbon nanotubes and graphene nanoribbons are created by treating the charge flow in the carbon layers in a 2D diffusion-drift approximation. A crucial element of the treatment is the electron equation of state that allows the effects of confinement and chirality to be represented. To model nanowire devices, the transport layer is embedded within a 3D structure and coupled to the electrostatics. This is illustrated with applications to carbon-based nanowire field-effect transistors of varying designs.

Electrostatics

10.1109/sispad.2015.7292328

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Citations (1)

AlSb/InAs HEMT's for low-voltage, high-speed applications

IEEE Transactions on Electron Devices (1998)

J.B. Boos W. Kruppa B. R. Bennett Daeui Park S. W. Kirchoefer

The design, fabrication, and characterization of 0.1 /spl mu/m AlSb/InAs HEMT's are reported. These devices have an In/sub 0.4/Al/sub 0.6/As/AlSb composite barrier above the InAs channel and a p/sup +/ GaSb layer within the AlSb buffer layer. The HEMT's exhibit a transconductance of 600 mS/mm and an f/sub T/ of 120 GHz at V/sub Ds/=0.6 V. An intrinsic f/sub T/ of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT's have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and V/sub Ds/=0.4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT's with a 0.5 /spl mu/m gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic f/sub T/L/sub g/, product of 50 GHz-/spl mu/m.

Transconductance

10.1109/16.711349

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Citations (139)

Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs

Electronics Letters (1993)

J.B. Boos B. V. Shanabrook Daeui Park J. L. Davis H.B. Dietrich

DC and RF measurements on AlSb/InAs HEMTs biased in the commonly observed high output conductance region are reported. In this region, high gate current, inductive output impedance and increased noise were observed resulting from impact ionisation. Devices with a 0.5 μm gate length exhibited a maximum fY and fmax of 25 and 40GHz, respectively.

Impact ionization

10.1049/el:19931257

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Citations (26)

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

IEEE Transactions on Nuclear Science (2012)

B. D. Weaver Patrick Martin J.B. Boos Cory D. Cress

We present the results of a radiation damage experiment on ${\rm Al}_{\rm x}{\rm Ga}_{1-{\rm x}}{\rm N/GaN}$ high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.

Electron Mobility

10.1109/tns.2012.2224371

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Citations (59)