Anshu Goyal

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Growth of ZnO nano films on Sapphire/GaAs/ Si substrates

International Workshop on Physics of Semiconductor Devices (2007)

G. Prasad Akhilesh Pandey Satish Mohan Kamal Lohani Anshu Goyal

ZnO films of Nano dimensions 70-250 nm were obtained on different substrates namely Sapphire/GaAs. Metallic Zn films were deposited by thermal evaporation method at room temperature under vacuum ~ 10 ^-6 torr. These films were subsequently partially oxidized by chemical method followed by heat treatment at three different elevated temperatures 350degC,400degC, and 450degC in O2/air. These films were characterized by X-ray for phase analysis, Atomic Force Microscope (AFM) for surface related features . Surface steps flow mechanism drives the growth mode and ZnO nanoislands are well formed on c-axis sapphire due to less thermal mismatch between the film and the substrate.

Torr

Vacuum evaporation

10.1109/iwpsd.2007.4472558

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Growth and characterization of Hg1-xCdxTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

Bulletin of Materials Science (2005)

Manju Malhotra Madhukar Gautam J. Radhakrishnan V. N. Kapoor Sudeep Verma

Cadmium telluride photovoltaics

Isothermal process

Characterization

10.1007/bf02704226

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Polytype switching identification in 4H-SiC single crystal grown by PVT

Journal of Materials Science Materials in Electronics (2020)

Aman Arora Akhilesh Pandey Ankit Patel Sandeep Dalal Brajesh S. Yadav

Sublimation

Cathodoluminescence

Ingot

10.1007/s10854-020-04184-y

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Sintering Behaviour of Samarium Modified Lead Calcium Titanate Ceramics

Ferroelectrics (2005)

Sarabjit Singh O. P. Thakur Anshu Goyal Chandra Prakash K. K. Raina

Modified Lead Calcium Titanate (PCT) compositions with representative formula, Pb 0.76−x Sm x Ca 0.24 Ti 0.98 Mn 0.02 O 3 (x = 0–0.1 in steps of 0.02) were prepared by conventional dry ceramic method. Effects of samarium substitution on physical, structural properties and thermal behaviour of PCT ceramics are reported here. All the samples were subjected to XRD analysis and were found to have single phase with tetragonal structure up to 8 mol% Sm substitution. The variations of density and tetragonality have been studied with samarium content. Microstructural analysis shows the uniform grain growth with increasing Sm concentration. Dilatometric study has been done to predict sintering schedule of the green samples.

Tetragonal crystal system

Lead titanate

Calcium titanate

10.1080/00150190500324618

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Stable Optical Quality SiO2/TiO2 Stack Development for the Facet Coating of Laser Diodes

Springer proceedings in physics (2019)

D. K. Mohanty Anshu Goyal K. Chandhok Alok Jain

X-ray reflectivity

Stoichiometry

10.1007/978-3-319-97604-4_148

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Structural, ferroelectric and optical properties of PZT thin films

Physica B Condensed Matter (2005)

Sushil Pandey A. R. James R. Raman S.N. Chatterjee Anshu Goyal

Lead zirconate titanate

10.1016/j.physb.2005.08.024

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Citations (99)

Liquid Phase Exfoliation and Characterization of Few Layer MoS2 and WS2 Nanosheets as Channel Material in Field Effect Transistor

Transactions on Electrical and Electronic Materials (2023)

Rohit Sharma Ashish Kumar Anit Dawar Sunil Ojha Ambuj Mishra

Exfoliation joint

Organic field-effect transistor

10.1007/s42341-023-00429-9

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Non Destructive Evaluation of AlGaN/GaN HEMT structure by cathodoluminescence spectroscopy

Journal of Luminescence (2020)

Anshu Goyal Brajesh S. Yadav R. Raman Anand Kumar Sandeep Dalal

Cathodoluminescence

Barrier layer

10.1016/j.jlumin.2020.117834

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Citations (8)

Study of energy band discontinuity in NiZnO/ZnO heterostructure using X-ray photoelectron spectroscopy

Applied Physics Letters (2016)

Sheetal Dewan Monika Tomar Anshu Goyal A. K. Kapoor R. P. Tandon

A heterostructure based on ZnO and Ni doped ZnO (NiZnO) thin films has been prepared on c-plane sapphire substrate by pulsed laser deposition technique. X-ray photo electron spectroscopy has been utilized to study the energy band discontinuities, i.e., valence band offset (ΔEv) and conduction band offset (ΔEc) at the interface of NiZnO and ZnO thin films. A type-II band alignment is identified at the interface of prepared heterostructure from the computed data, which is attractive for the realization of efficient optoelectronic devices.

Band offset

Pulsed Laser Deposition

Wide-bandgap semiconductor

10.1063/1.4952717

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Citations (19)

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