E S Kannan

Birla Institute of Technology and Science, Pilani

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Gil‐Ho Kim

Sungkyunkwan University

D. A. Ritchie

University of Cambridge

R Anu Roshini

Birla Institute of Technology and Science, Pilani

Inyeal Lee

Sungkyunkwan University

I. Farrer

University of Sheffield

C. Malavika

Tata Institute of Fundamental Research

A. Venkatesan

Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram

B. Manoj Kumar

Birla Institute of Technology and Science, Pilani

Servin Rathi

Chettinad Health City

Thomas Beck

University of Colorado Denver

Cooperative Institutions

Sungkyunkwan University

Birla Institute of Technology and Science, Pilani

Centre National de la Recherche Scientifique

Samsung (South Korea)

Suwon Research Institute

Université Grenoble Alpes

Laboratoire National des Champs Magnétiques Intenses

Université Joseph Fourier

Government of the Republic of Korea

Institute of Nanotechnology

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Electrically tunable metal–semiconductor behavior in 2H-MoTe2

Journal of Applied Physics (2025)

B. Manoj Kumar Shreya Gaonkar Rashed H. Lone C. Malavika E S Kannan

In this study, we report tunable metallic and semiconducting behavior in molybdenum di-telluride (2H-MoTe2) by manipulating the Joule heating process through electrical control of the channel current. At low voltages, 2H-MoTe2 exhibits semiconducting behavior. As the current surpasses a critical threshold at higher voltages, the material transitions to a metallic-like state, confirmed by a positive temperature coefficient of resistance. Temperature- and voltage-dependent Raman studies confirm that this semiconducting to metal-like transition occurs without any accompanying structural phase transformation. This metallic behavior is likely due to enhanced phonon scattering caused by the increase in lattice temperature. In the metallic state, exposure to H2 gas results in a negative response, with increased resistance due to additional phonon scattering. Conversely, laser exposure at this state produces no noticeable photoresponse because the already high lattice temperature limits the impact of further heating. These effects were suppressed when 2H-MoTe2 was placed on a hexagonal boron nitride/multilayer graphene heat sink. This dynamic modulation of conductivity in 2H-MoTe2 through electrical stimuli highlights its potential for nanoelectronic device applications.

10.1063/5.0238421

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Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors

Journal of Applied Physics (2012)

Inyeal Lee Jianwei Wang Gil‐Ho Kim Jin‐Hong Park E S Kannan

Highly conductive and water-dispersible sheets of reduced graphene oxide (RGO) were produced by rapidly heating graphene oxide (GO) paper at a low temperature (300 °C) for a short processing time of 3 s. The GO paper was thermally treated during the rapid-heating reduction process and, consequently, the oxygen functional groups in the obtained RGO were highly reduced. The RGO film displays good thermal stability, crystallinity, low sheet resistance, and good dispersibility in water, which makes it an ideal candidate to be used in various carbon-based electronic devices. We finally demonstrate the suitability of RGO as an active channel material and as a source-drain electrode for graphene field-effect transistors, which bring the possibility of realizing all-carbon devices a step closer to reality.

Carbon fibers

Thermal Stability

Contact resistance

10.1063/1.4739486

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Citations (7)

Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

Science and Technology of Advanced Materials (2014)

I. Bisotto E S Kannan J.C. Portal Devin K. Brown Thomas Beck

In this work, we studied the photovoltage response of an antidot lattice to microwave radiation for different antidot parameters. The study was carried out in a Si/SiGe heterostructure by illuminating the antidot lattice with linearly polarized microwaves and recording the polarity of induced photovoltage for different angles of incidence. Our study revealed that with increased antidot density and etching depth, the polarity of induced photovoltage changed when the angle of incidence was rotated 90 degrees. In samples with large antidot density and/or a deeply etched antidot lattice, scattering was dominated by electron interaction with the asymmetrical potential created by semicircular antidots. The strong electron-electron interaction prevailed in other cases. Our study provides insight into the mechanism of interaction between microwaves and electrons in an antidot lattice, which is the key for developing an innovative ratchet-based device. Moreover, we present an original and fundamental example of antidot lattice etching through the use of a two-dimensional electron gas. This system deals with a hole lattice instead of an electron depletion in the antidot lattice region.

Lattice (music)

Polarity reversal

10.1088/1468-6996/15/4/045005

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High performance MoS₂-based field-effect transistor enabled by hydrazine doping

Nanotechnology (2016)

Dongsuk Lim E S Kannan Inyeal Lee Servin Rathi Lijun Li

We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 μA at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.

Hydrazine (antidepressant)

10.1088/0957-4484/27/22/225201

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Low temperature hydrogen sensing using reduced graphene oxide and tin oxide nanoflowers based hybrid structure

Semiconductor Science and Technology (2016)

A. Venkatesan Servin Rathi Inyeal Lee Jinwoo Park Dongsuk Lim

In this paper, we have demonstrated a low temperature hydrogen (H2) sensor based on reduced graphene oxide (rGO) and tin oxide nanoflowers (SnO2 NFs) hybrid composite film. The addition of SnO2 NFs into rGO solution inhibits irreversible restacking and agglomeration of rGO and increases the active surface area for interaction with H2. This rGO-SnO2 NFs hybrid film sensor showed an excellent response to H2 at 60 °C at 200 ppm with an improvement of 126% compared to pure rGO which was used as a control sample. The sensor also showed good response and recovery time in comparison to pure rGO film. The highly improved H2 sensing characteristics of rGO-SnO2 NFs hybrid are due to its (a) unique structural geometry that increased the surface area for H2 adsorption, and (b) change in the width of depletion layer at the interface due to H2 interaction.

Tin oxide

Hydrogen sensor

10.1088/0268-1242/31/12/125014

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Citations (29)

Energy free microwave based signal communication using ratchet effect

Applied Physics Letters (2012)

E S Kannan I. Bisotto J. C. Portal Thomas Beck Laurent Jalabert

The ratchet based microwave detectors are implemented as receivers of amplitude, frequency, and pulse width modulated signals. The detector has a peak responsivity of 994 V/W and has excellent signal to noise ratio in the measurement bandwidth with its noise equivalent power of about 0.01 pico W/√Hz and 6.3 × 107 cm√Hz/W detectivity. The frequency limit of detection can be tuned by a suitable choice of the antidot parameters. The advantages of the utilizing ratchet based active antennas are simple circuitry, controllable spectral range, no power consumption, and natural rejection of stray electromagnetic radiations.

SIGNAL (programming language)

10.1063/1.4756786

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Reduced Graphene Oxide for Room Temperature Hydrogen Storage Application

Advanced materials research (2015)

A. Venkatesan Raj Nanalal Patel E S Kannan

Graphene oxide (GO) is extracted from graphite oxide synthesized using modified Hummers method. The extracted GO solution is then drop casted onto a p type silicon substrate and dried in hot air oven. The dried solution is annealed at a temperature of about 200 degree Celsius for about one hour to obtain thermally reduced graphene oxide (RGO). Such thermally synthesized RGO usually have a lot of structural defects which can act as a binding site for hydrogen. The binding efficiency of hydrogen to defect centers can be increased by applying electric field to RGO as it changes the carrier concentration (doping) on the surface. This induces more polarization in the hydrogen molecule resulting in strong binding force, thereby increasing its hydrogen storage efficiency. In our experiment we have demonstrated room temperature electric field doping in RGO films by modulating the channel current by changing the back gate voltage which is a precursor for employing RGO in hydrogen storage applications. Keywords Graphene oxide, Reduced graphene oxide, Field effect, Hydrogen storage, and Defects

Graphite oxide

10.4028/www.scientific.net/amr.1086.91

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Citations (3)

Manipulation of Trions to Enhance the ExcitonicEmission in Monolayerp-MoS2and its Hetero-bilayer by Reverse Charge Injection

Nanoscale (2024)

Rashed H. Lone Santosh L. Gaonkar B. Manoj Kumar E S Kannan

Photoluminescence enhancement in monolayer transition metal dichalcogenides (TMDCs) is achieved through interface engineering with conductive substrates and the formation of heterobilayers.

10.1039/d4nr04009k

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Single crystal flake parameters of MoS₂ and MoSe₂ exfoliated using anodic bonding technique and its potential in rapid prototyping

Journal of Physics Communications (2020)

C. Malavika R Anu Roshini R. S. Surya Kanthi E S Kannan

Abstract Rapid prototyping of devices using exfoliated Molybednum di-Sulphide (MoS 2 ) and Molybdenum di-Selenide (MoSe 2 ) requires an experimental protocol for maximizing the probability of realizing flakes with desired physical dimension and properties. In this work, we analyzed the size and thickness distribution of MoS 2 and MoSe 2 single crystalline flakes exfoliated using anodic bonding technique and established a correlation between physical dimension of the flakes and the bonding parameters. Anodic bonding was carried out by applying a fixed voltage of 200 V with a set temperature of 150 °C for four different bonding time intervals. On analyzing the flake parameters from the four anodic bonded substrates using the optical and atomic force microscopy, it is found that the probability of getting flakes with large lateral size (>200 μ m) increases as the bonding time interval is increased. Most of these large sized flakes have thickness of more than one hundred mono-layers and a tiny fraction of them have thickness of the order of few monolayers. A similar trend was also observed for MoSe 2 single crystals. To demonstrate the feasibility of this technique in rapid prototyping, ultra thin MoS 2 flakes was directly bridged between two ITO electrodes and their transport properties was investigated. Micro-Raman and photoluminescence studies were taken on selected regions of the thicker and thinner exfoliated flakes and their physical properties are compared.

Flake

Electroforming

10.1088/2399-6528/abc296

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Anomalous conductance induced by hydrogen on ZnO and catalyzed ZnO nanoflowers

EPL (Europhysics Letters) (2019)

R Anu Roshini Keshav Nagpal E S Kannan

In this work, we report on the anomalous conductance induced by hydrogen (H2) gas on as-grown and gold/palladium (Au/Pd)-catalyzed zinc oxide nanoflowers (ZnO NFs). The catalyzed ZnO NFs exhibited a sharp increase in conductivity on H2 exposure and the conductance persisted for several hours on removing H2. This anomalous behavior is in sharp contrast to conventional ZnO-based H2 gas sensors wherein the conductivity decreases on removing H2 gas. The as-grown ZnO NF sample showed drastic response to H2 under UV illumination with its conductivity increasing by almost 500%. We attribute our observation to catalyzed chemidesorption of oxygen from the ZnO lattice.

10.1209/0295-5075/127/57005

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Citations (3)