Yusong Zhi

South China Normal University

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Weihua Tang

Nanjing University of Posts and Telecommunications

Zhenping Wu

Beijing University of Posts and Telecommunications

Peigang Li

Beijing University of Posts and Telecommunications

Daoyou Guo

Zhejiang Sci-Tech University

Zeng Liu

Inner Mongolia University

Shan Li

Nanjing University of Posts and Telecommunications

Zuyong Yan

Lanzhou University of Technology

Xia Wang

University of Jinan

Wei Cui

South China University of Technology

Yuanqi Huang

ShanghaiTech University

Cooperative Institutions

Beijing University of Posts and Telecommunications

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Zhejiang Sci-Tech University

Nanjing University of Posts and Telecommunications

State Key Laboratory of Information Photonics and Optical Communications

Harbin Institute of Technology

Photonics (United States)

Dalian University of Technology

University of Science and Technology Beijing

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Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon (2017)

Xiaolong Wang Ruge Quhe Wei Cui Yusong Zhi Yuanqi Huang

10.1016/j.carbon.2017.12.076

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Citations (55)

Synthesis of free-standing Ga ₂ O ₃ films for flexible devices by water etching of Sr ₃ Al ₂ O ₆ sacrificial layers

Chinese Physics B (2019)

Xia Wang Zhenping Wu Wei Cui Yusong Zhi Zhipeng Li

10.1088/1674-1056/28/1/017305

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Citations (15)

Self-Powered β-Ga₂O₃ Solar-Blind Photodetector Based on the Planar Au/Ga₂O₃ Schottky Junction

ECS Journal of Solid State Science and Technology (2020)

Yusong Zhi Zeng Liu Xulong Chu Shan Li Zuyong Yan

In this paper, asymmetric interdigital Ti and Au electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition. Both photoconductive and photovoltaic modes have been observed under ultraviolet illumination, respectively. The device exhibits a low current density of 0.32 nA cm−2 at 20 V in dark condition. As the 254 nm illumination intensity increases above 400 μW cm−2, the device exhibits obvious self-powered characteristics with a responsivity of 0.4 mA W−1, providing a specific detectivity of 1.8 × 1012 Jones, a fast response time (τd = 50 ms), and a high photo-to-dark current ratio of ∼105. As the positive bias was applied to Au/Ga2O3 contact, the photodetector presents an improved performance with a responsivity of ∼0.3 A W−1 and a specific detectivity of 2.2 × 1014 Jones at −10 V, ultra-high photo to dark ratio (2 × 106 ∼ 9 × 107), and a response time of 160 ms. In one word, the simple structured, self-powered characteristics and decent performances of the detector suggest promising applications in solar-blind ultraviolet photoelectronic technology in multiple areas.

Photoconductivity

Specific detectivity

Ultraviolet

10.1149/2162-8777/aba741

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Citations (35)

Construction of a β-Ga₂O₃-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

Journal of Materials Chemistry C (2020)

Zeng Liu Shan Li Zuyong Yan Yuanyuan Liu Yusong Zhi

A dual-mode, sensitive β-Ga₂O₃ MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 10¹¹ Jones.

Photodiode

Dual mode

Quantum Efficiency

10.1039/d0tc00100g

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Citations (66)

Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films

Journal of Alloys and Compounds (2016)

Wenhao Li Yangke Peng Chong Wang Xiaolong Zhao Yusong Zhi

10.1016/j.jallcom.2016.12.143

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Citations (44)

High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga₂O₃/spiro-MeOTAD p–n heterojunction

Journal of Materials Chemistry C (2020)

Zuyong Yan Shan Li Zeng Liu Yusong Zhi Jie Dai

A β-Ga₂O₃/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Ultraviolet

10.1039/c9tc06767a

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Citations (92)

The electronic structure and magnetic property of the Mn doped β-Ga2O3

Superlattices and Microstructures (2018)

Xiaolong Wang Ruge Quhe Yusong Zhi Zeng Liu Yuanqi Huang

Acceptor

Magnetic semiconductor

10.1016/j.spmi.2018.12.001

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Citations (23)

Enhanced deep-ultraviolet sensing by an all-inorganic p-PZT/n-Ga₂O₃ thin-film heterojunction

Journal of Physics D Applied Physics (2021)

Zeng Liu Shaohui Zhang Yusong Zhi Shan Li Zuyong Yan

Abstract In this work, an enhanced-performance deep-ultraviolet (DUV) photodetector based on a Ga 2 O 3 /lead zirconate titanate (Pb(Zr 0.52 Ti 0.48 )O 3 , PZT) p-n heterojunction is fabricated and characterized for the first time. Compared to a Ga 2 O 3 -based device, the heterojunction device achieved a lower dark current of 2.7 × 10 −11 A, a higher photo- to dark-current ratio of 2 × 10 3 , a higher responsivity of 5.5 mA W −1 , a larger specific detectivity of 2.6 × 10 11 Jones and a higher external quantum efficiency of 2.7% at −2 V under 254 nm UV light illumination with an intensity of 500 μ W cm −2 . The p-PZT/n-Ga 2 O 3 was confirmed to be a potential candidate for the construction of DUV photodetectors with enhanced sensing performance.

Ultraviolet

Lead zirconate titanate

10.1088/1361-6463/abe1ea

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Citations (12)

Magnetic properties and crystal structure of Ga_2−xFe_xO₃

Powder Diffraction (2018)

Hui Yan Yuanqi Huang Wei Cui Yusong Zhi Daoyou Guo

Ga 2− x Fe x O 3 (GFO) bulks with x from 0.7 to 1.3 have been fabricated using the classic solid-state route. The structural, optical, and magnetic properties have been investigated systematically. X-ray diffraction spectra and FULLPROF profile fitting indicate that GFO bulks belong to the orthorhombic structure with the space group Pc 2 1 n . Phase separation appears at the Fe content of x = 1.3. The optical bandgap decreases almost linearly with the increase of iron content, which means that the bandgap of GFO bulks can be controlled by adjusting the Fe content in the samples. The magnetic property measurements suggest that GFO is ferromagnetic, and the magnetic properties are enhanced compared with other reported works, exhibiting the application in ferromagnetic semiconductors devices.

Orthorhombic crystal system

Magnetic semiconductor

10.1017/s0885715618000374

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Citations (8)

Au plasmon enhanced high performance β-Ga2O3 solar-blind photo-detector

Progress in Natural Science Materials International (2016)

Yuehua An Xulong Chu Yuanqi Huang Yusong Zhi Daoyou Guo

Surface plasmon polariton (SPP) is electro-magnetic wave coupled to free electron oscillations near the surface of metal, and has been used to improve the photoelectric properties in many optoelectronic devices. In the present study, the Au nanoparticles (NPs)/β-Ga2O3 composite thin film was fabricated through depositing Au ultra-thin film on the β-Ga2O3 thin film followed by post-thermal treatment. Compared to bare β-Ga2O3 thin film, a significant absorption around 510 nm, which is attributed to SPP of Au NPs, was observed in the UV–vis spectrum of Au NPs/β-Ga2O3 composite thin film. The results showed that the photoresponse of Au NPs/Ga2O3 photodetector illuminated under 254 nm+532 nm light was much higher than that illuminated under 254 nm light, indicating an enhancement of photoelectric property for the solar-blind photodetector based on β-Ga2O3 thin film.

Photoelectric effect

Visible spectrum

10.1016/j.pnsc.2016.01.008

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Citations (42)