Yu‐Te Liao

National Yang Ming Chiao Tung University

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F. Ren

University of Florida

S. J. Pearton

University of Florida

Kevin C.‐W. Wu

National Taiwan University

Shao-Yung Lu

National Yang Ming Chiao Tung University

Chao-Ching Chiang

University of Florida

Brian Otis

University of Washington

Jenshan Lin

Tufts University

Josephine F. Esquivel‐Upshaw

University of Florida

Siang-Sin Shan

National Yang Ming Chiao Tung University

Minghan Xian

University of Florida

Cooperative Institutions

National Yang Ming Chiao Tung University

129

National Taiwan University

National Tsing Hua University

University of Florida

National Cheng Kung University

University of Washington

Industrial Technology Research Institute

Taipei Veterans General Hospital

National Chung Cheng University

National Taipei University of Technology

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Detection of Lactate in Human Sweat Via Surface-Modified, Screen-Printed Carbon Electrodes

Nitish Kumar Yi-Jie Lin Yu-Chiao Huang Yu‐Te Liao Shu‐Ping Lin

Real-time and continuous monitoring of lactate levels in sweat has been used as an indicator of physiological information to evaluate exercise outcomes and sports performance. We developed an optimal enzyme-based biosensor to detect the concentrations of lactate in different fluids (i.e., a buffer solution and human sweat). The surface of the screen-printed carbon electrode (SPCE) was first treated with oxygen plasma and then surface-modified by lactate dehydrogenase (LDH). The optimal sensing surface of the LDH-modified SPCE was identified by Fourier transform infrared spectroscopy and electron spectroscopy for chemical analysis. After connecting the LDH-modified SPCE to a benchtop E4980A precision LCR meter, our results showed that the recorded response was a function of the lactate concentration with a wide dynamic range of 0.1–100 mM (R2 = 0.95) and a limit of detection of 0.1 mM which was unachievable without using redox species A state-of-the-art electrochemical impedance spectroscopy (EIS) chip was developed to integrate the LDH-modified SPCE for a portable bioelectronic platform in the detection of lactate in human sweat. We believe the optimal sensing surface can improve the sensitivity of lactate sensing in a portable bioelectronic EIS platform for early diagnosis or real-time monitoring during different physical activities.

Carbon fibers

10.2139/ssrn.4364631

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Dynamic Switching of 1.9 A/1.76 kV Forward Current NiO/β-Ga₂O₃ Rectifiers

ECS Journal of Solid State Science and Technology (2022)

Jian-Sian Li Chao-Ching Chiang Xinyi Xia Cheng-Tse Tsai F. Ren

The switching performance of unpackaged vertical geometry NiO/ β -Ga 2 O 3 rectifiers with a reverse breakdown voltage of 1.76 kV (0.1 cm diameter, 7.85 × 10 −3 cm 2 area) and an absolute forward current of 1.9 A fabricated on 20 μ m thick epitaxial β -Ga 2 O 3 drift layers and a double layer of NiO to optimize breakdown and contact resistance was measured with an inductive load test circuit. The Baliga figure-of-merit of the devices was 261 MW.cm −2 , with differential on-state resistance of 11.86 mΩ.cm 2 . The recovery characteristics for these rectifiers switching from forward current of 1 A to reverse off-state voltage of −550 V showed a measurement-parasitic-limited recovery time (t rr ) of 101 ns, with a peak current value of 1.4 A for switching from 640 V. The reverse recovery time was limited by extrinsic parasitic and thus does not represent the intrinsic device characteristics. There was no significant dependence of t rr on switching voltage or forward current.

Non-blocking I/O

Figure of Merit

Switching time

10.1149/2162-8777/ac942c

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Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2024)

Jian-Sian Li Chao-Ching Chiang Hsiao-Hsuan Wan Meng-Hsun Yu Yiting Lin

Switching of vertical 6.1 kV/4A NiO/Ga2O3 rectifiers from voltages up to 1.45 kV showed reverse recovery times of 75 ns, current slew rate of 39.0 A/μs, and energy loss of ∼105 μW. These are the highest switching voltages reported for Ga2O3 rectifiers. To place the results in context, commercial 3.3 kV/5 A SiC merged PiN Schottky diodes showed reverse recovery times of 20 ns, current slew rate of 47.5 A/μs, and energy loss of ∼67 μW. The validity of comparing unpackaged experimental Ga2O3 diodes with commercial Si or SiC diodes without considering their differences in chip size and consequently in capacitive charge and ON-resistance is restricted. However, the results show the rapid progress in these devices when compared to commercial SiC rectifiers.

Slew rate

10.1116/6.0003839

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Mesoporous TiO₂ Embedded with a Uniform Distribution of CuO Exhibit Enhanced Charge Separation and Photocatalytic Efficiency

ACS Applied Materials & Interfaces (2017)

Yu‐Te Liao Y. S. Huang Hao Ming Chen Kenji Komaguchi Chia‐Hung Hou

Mixed metal oxide nanoparticles have interesting physical and chemical properties, but synthesizing them with colloidal methods is still challenging and often results in very heterogeneous structures. Here, we describe a simple method to synthesize mesoporous titania nanoparticles implanted with a uniform distribution of copper oxide nanocrystals (CuO@MTs). By calcining a titanium-based metal–organic framework (MIL-125) in the presence of Cu ions, we can trap the Cu in the TiO2 matrix. Removal of the organic ligand creates mesoporosity and limits phase separation so that tiny CuO nanocrystals form in the interstices of the TiO2. The CuO@MTs exhibits superior performance for photocatalytic hydrogen evolution (4760 μmol h–1) that is >90 times larger than pristine titania.

Copper oxide

Titanium oxide

10.1021/acsami.7b13912

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Analytical Specificity and Microbial Interference Study of a 30-Second Quantitative SARS-CoV-2 Detection Biosensor System

ECS Journal of Solid State Science and Technology (2022)

Chao-Ching Chiang Chan-Wen Chiu F. Ren Cheng-Tse Tsai Yu‐Te Liao

The analytical specificity and microbial interference of a SARS-CoV-2 biosensor detection platform were elucidated in this work. A cost-effective and highly sensitive detection system for the virus has been developed with the capability of producing quantitative results comparable with polymerase chain reaction (PCR) within 30 s. This could meet the demand for a fast diagnosis solution needed for the ongoing global pandemic. Disposable strips were biofunctionalized and immobilized with monoclonal SARS-CoV-2 antibodies. A printed circuit board embedded with a metal–oxide–semiconductor field-effect transistor (MOSFET) was also designed. The strips were connected to the gate electrode of the MOSFET, which received a synchronous pulse along with the drain electrode. The resulting waveform from the drain was then converted to digital readouts corresponding to virus or spike protein concentrations. We investigated 26 common organisms which are likely presented in the respiratory system along with 5 pathogens from the same genetic family of the SARS-CoV-2 virus for having cross-reaction or microbial interference, either of which would hinder the efficacy of the system. None of these organisms decreased the virus detection effectiveness of the sensor system.

10.1149/2162-8777/ac9b8f

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Power-Efficient Cyclic Voltammetric Electrochemical Sensing Readout Circuitry with Current-Reducer Ramp Waveform Generation

2022 IEEE International Symposium on Circuits and Systems (ISCAS) (2019)

Yi‐Chia Chen Shao-Yung Lu Yu‐Te Liao

This paper presents an electrochemical sensing chip with an integrated current-reducer pattern generator and a low-noise chopper-stabilization potentiostat circuit. The pattern generator, utilizing the current reducer technique and pseudo resistors, creates a sub-Hz ramp signal for the cyclic voltammetric measurement without large-size passive components. The proposed design adopts a chopper-stabilization potentiostat and time-based converter to reduce the amplitude noise effects. The design is fabricated using a 0.18-μm CMOS process and achieves a 41pA current resolution in the current range of ± 5μA while maintaining the R ² linearity of 0.998. The power consumption of the design is 16μW when a 5μA sensing current is detected. The power efficiency of the readout interface is 0.31 and the sensing current dynamic range is 108dB. The design is fully integrated into a single chip.

Potentiostat

Chopper

Linearity

10.1109/iscas.2019.8702086

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A Multimodality Electrochemical and Impedance Spectroscopy System-on-a-Chip With Temperature Sensing and Impedance-Boosting Techniques

IEEE Transactions on Biomedical Circuits and Systems (2023)

Yi-Jie Lin Weicheng Liu Yu-Chiao Huang Yingjie Huang Yung-Hua Yeh

This article presents a multimodal electrochemical sensing system-on-chip (SoC), including the functions of cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and temperature sensing. CV readout circuitry achieves an adaptive readout current range of 145.5 dB through an automatic range adjustment and resolution scaling technique. EIS has an impedance resolution of 9.2 m Ω/√ Hz at a sweep frequency of 10 kHz and an output current of up to 120 μA. With an impedance boost mechanism, the maximum detectable load impedance is extended to 22.95 k Ω, while the total harmonic distortion is less than 1%. A resistor-based temperature sensor using a swing-boosted relaxation oscillator can achieve a resolution of 31 mK in 0-85 °C. The design is implemented in a 0.18 μm CMOS process. The total power consumption is 1 mW.

10.1109/tbcas.2023.3287835

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Citations (1)

Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2019)

Minghan Xian Chaker Fares F. Ren F. Ren Yen‐Ting Chen

The electrical and structural properties of sputter-deposited W Schottky contacts with Au overlayers on n-type Ga2O3 are found to be basically stable up to 500 °C. The reverse leakage in diode structures increases markedly (factor of 2) for higher temperature annealing of 550–600 °C. The sputter deposition process introduces near-surface damage that reduces the Schottky barrier height in the as-deposited state (0.71 eV), but this increases to 0.81 eV after a 60 s anneal at 500 °C. This is significantly lower than conventional Ni/Au (1.07 eV), but W is much more thermally stable, as evidenced by Auger electron spectroscopy of the contact and interfacial region and the minimal change in contact morphology. The contacts are used to demonstrate 1.2 A switching of forward current to −300 V reverse bias with a reverse recovery time of 100 ns and a dI/dt value of 2.14 A/μs. The on/off current ratios were ≥106 at −100 V reverse bias, and the power figure-of-merit was 14.4 MW cm−2.

Auger electron spectroscopy

Reverse leakage current

Reverse bias

10.1116/1.5125006

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Citations (22)

Cover Picture: De Novo Synthesis of Gold‐Nanoparticle‐Embedded, Nitrogen‐Doped Nanoporous Carbon Nanoparticles (Au@NC) with Enhanced Reduction Ability (ChemCatChem 3/2016)

ChemCatChem (2016)

Yu‐Te Liao Jeffrey E. Chen Yohei Isida Tetsu Yonezawa Wei‐Chen Chang

The Front Cover shows the de novo synthesis of gold nanoparticles-embedded, nitrogen-doped nanoporous carbon as an efficient catalyst for the reduction of 4-nitrophenol. In their Communication, Liao et al. have revealed a new method for simultaneously adding different functionalities into nanoporous materials. This is a collaboration mainly between National Taiwan University and Hokkaido University, therefore, their symbols are represented each side of the cover image. To indicate the significance of this new method, we adapt the words of Dr. William S. Clark, the first president of Hokkaido University, from “Boys, be ambitious” to “Boys, be de novo synthesis”. More information can be found in the Communication by Liao et al. on page 502 in Issue 3, 2016 (DOI: 10.1002/cctc.201501020).

Nanoporous

Front cover

Carbon fibers

10.1002/cctc.201600076

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DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

Jiancheng Yang Patrick H. Carey F. Ren Yen‐Ting Chen Yu‐Te Liao

Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga₂O₃ vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10¹⁶ cm^-3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga₂O₃ vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm² ) Ga₂O₃rectifiers were fabricated on a Si-doped n-Ga₂O₃ drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga₂O₃ (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga₂O₃ rectifiers. The on-state resistance was 0.26 Ω·cm² for these largest diodes, decreasing to 5.9 × 10^-4 Ω·cm² for 40x40 μm² devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10^-3 cm² area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga₂O₃ drift layers. These devices were switched from 0.225 A to -700 V with t_rr of 82 ns, and from 1 A to -300 V with t_rr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t_rr up to 150°C.

10.1117/12.2515006

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Citations (2)