S. Billat

Hahn-Schickard-Gesellschaft für angewandte Forschung

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F. Hedrich

Hahn-Schickard-Gesellschaft für angewandte Forschung

M. Ligeon

Centre National de la Recherche Scientifique

H. Lüth

Forschungszentrum Jülich

M. Berger

Forschungszentrum Jülich

Michael Krüger

University of Münster

Roland Zengerle

University of Freiburg

J. Auber

Hahn-Schickard-Gesellschaft für angewandte Forschung

Frank Müller

Saarland University

R. Hérino

Université Joseph Fourier

F. Gaspard

UCLouvain

Cooperative Institutions

Hahn-Schickard-Gesellschaft für angewandte Forschung

Centre National de la Recherche Scientifique

Université Grenoble Alpes

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Université Joseph Fourier

Forschungszentrum Jülich

Laboratoire Interdisciplinaire de Physique

RWTH Aachen University

CEA Grenoble

Université de Sherbrooke

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B4.4 - New Packaging of Flow Sensors with Monolithic Integration of Micro-Channel on Chip

S. Billat K. Kliche R. Gronmaier J. Auber Frank Hedirch

We report on the integration of a micro flow channel with a thermal flow sensor chip.Two different technologies were investigated: First the fluid channel is performed at the back side of the standard HSG-IMIT flow sensor chip using standard silicon etching process (KOH and RIE).The second technology consists of a bond process between the flow sensor die and a polydimethylsiloxane (PDMS) sheet containing the channel.Both sensor types can be used for detecting flow rates in the range of 0.1-5.0µl/min (H2O) and/or pressure differences of 10-600 Pa.Compared to our previous sensor design this leads to reduced packaging costs, increased reproducibility (better than 1 %) and in particular a higher sensitivity at low flow rates.Finally a concept of an adhesive-free packaging of the sensor is presented.

Polydimethylsiloxane

Flow sensor

Integrated circuit packaging

10.5162/sensor09/v1/b4.4

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Citations (0)

Color-sensitive photodetector based on porous silicon superlattices

Thin Solid Films (1997)

Michael Krüger M. Marso M. Berger M. Thönissen S. Billat

Photodiode

Porous Silicon

Anodizing

10.1016/s0040-6090(96)09414-x

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Citations (33)

Micromachined inclinometer with high sensitivity and very good stability

Sensors and Actuators A Physical (2002)

S. Billat H. Glosch M Kunze F. Hedrich J. Frech

Inclinometer

Thermal Stability

10.1016/s0924-4247(01)00824-x

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Citations (102)

Dielectric filters made of PS: advanced performance by oxidation and new layer structures

Thin Solid Films (1997)

M. Berger R. Arens-Fischer M. Thönissen Michael Krüger S. Billat

Thermal oxidation

10.1016/s0040-6090(96)09361-3

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Citations (150)

Variable Pumping Control for Low Power Microfluidic Chip Cooling

Sabrina da Luz G. Kattinger Gerard Laguna Hassan Azarkish Montse Vilarrubí

As microelectronic modules increase in power density, liquid cooling has become increasingly required to maintain acceptable chip temperatures. Liquid cooling in microchannels offers low thermal resistance and can be integrated into modules given their small size and implementation by microfabrication methods [1]. Microchannel cooling is therefore particularly well suited for embedded or portable applications. Their performance and compact form factor come, however, to the cost of increased pressure drop compared to larger scale cold plates. Since energy is limited in portable applications, power consumption by the cooling system (product of pressure drop and flow rate) should be minimized. This can be done by reducing the pressure drop with optimal design [2] or by distributing the flow in parallel microchannels or cell arrays [3], [4]. This work focuses on reducing the flow rate by adapting the pumping conditions to only provide the minimal flow rate required to maintain the maximum chip temperature.

Microchannel

Microelectronics

Computer cooling

10.1109/therminic.2018.8593279

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Citations (4)

Analysis of the electroluminescence observed during the anodic oxidation of porous layers formed on lightly p-doped silicon

Journal of Applied Physics (1993)

M. Ligeon Frank Müller R. Hérino F. Gaspard Jean‐Claude Vial

A detailed analysis of the different characteristics of the electroluminescence that is observed during the anodic oxidation of porous silicon layers formed on lightly p-doped substrates is presented. It is shown that the emission presents characteristics very similar to that of the photoluminescence observed on the same porous layers, and that the same basic mechanisms are involved in the two phenomena. The emission intensity increase with the oxidation level is quantitatively explained by the passivation enhancement provided by the electrochemical oxidation. The spectral shift of the spectra during the oxidation is also discussed: It is shown to result from the decrease in the sizes of the largest emitting crystallites or/and from the significant improvement of the passivation of the smallest ones due to the oxide growth. The effect of the anodizing current density on the emission efficiency is also presented.

Passivation

Porous Silicon

Anodizing

Light emission

Polycrystalline silicon

10.1063/1.354930

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Citations (27)

Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime

Thin Solid Films (1995)

S. Billat F. Gaspard R. Hérino M. Ligeon Frank Müller

Porous Silicon

Light emission

Polycrystalline silicon

10.1016/0040-6090(95)06579-2

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Citations (6)

Analysis of the depth homogeneity of p-PS by reflectance measurements

Thin Solid Films (1997)

M. Thönissen M. Berger S. Billat R. Arens-Fischer Michael Krüger

Isotropic etching

10.1016/s0040-6090(96)09420-5

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Citations (57)

Novel Fabrication Technology for Thermoelectric Infrared Sensors Using Surface Micromachining

Philipp Raimann S. Billat Irina Spies Jochen Dietrich Daniel Hoffmann

In this paper a novel fabrication technology for thermoelectric infrared sensors is presented. For the first time, the thermal insulation of the absorber structure is achieved by self-assembling multilayer thermocouples. After removal of a sacrificial oxide layer by vapor hydrogen fluoride (vHF) etching, the thermocouples lift off due to residual stress gradients. This provides the necessary distance between the absorber and the substrate. Compared to state-of-the-art sensors, this implementation does not require extensive bulk processing such as grinding and cavity etching to achieve a thermally isolated absorber structure. The deflection of the realized structures has shown high agreement with an analytical model which is also presented in this paper.

Thermocouple

Thermopile

10.1109/ssi56489.2022.9901417

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Citations (0)

Micromachined inclinometer with high sensitivity and very good stability

Springer eBooks (2001)

S. Billat H. Glosch M Kunze F. Hedrich J. Frech

Inclinometer

Thermal Stability

10.1007/978-3-642-59497-7_345

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Citations (9)