M. A. Tischler

Roche Pharma AG (Germany)

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S. M. Bedair

North Carolina State University

T. F. Kuech

University of Wisconsin–Madison

T. F. Kuech

University of Wisconsin–Madison

Joan M. Redwing

Pennsylvania State University

R. M. Potemski

IBM Research - Thomas J. Watson Research Center

R. T. Collins

Colorado School of Mines

F. Cardone

Marche Polytechnic University

P. M. Solomon

IBM Research - Thomas J. Watson Research Center

T. Katsuyama

Sumitomo Electric Industries (Japan)

J.S. Flynn

Danbury Hospital

Cooperative Institutions

IBM Research - Thomas J. Watson Research Center

IBM (United States)

United States Geological Survey

North Carolina State University

University of Wisconsin–Madison

United States Department of the Interior

University of Michigan–Ann Arbor

Columbia University

Goddard Space Flight Center

Cornell University

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Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

Applied Physics Letters (1988)

T. F. Kuech M. A. Tischler P.-J. Wang G. Scilla R. M. Potemski

The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels (≳1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.

Carbon fibers

10.1063/1.100008

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Citations (180)

An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Applied Physics Letters (1996)

Joan M. Redwing D.A.S. Loeber Neal G. Anderson M. A. Tischler J.S. Flynn

An optically pumped GaN-based vertical cavity surface emitting laser (VCSEL) is demonstrated. Laser emission near 363 nm is observed at room temperature from the surface of a VCSEL structure optically pumped along a cleaved sample edge by focused light from a nitrogen laser. The VCSEL structure, which was grown on a sapphire substrate by metalorganic vapor phase epitaxy, consists of a 10 μm GaN active region sandwiched between 30-period Al0.40Ga0.60N–Al0.12Ga0.88N Bragg reflectors. At optical pump intensities above ∼2.0 MW/cm2, a narrow (<5 Å) laser mode at 363.5 nm emerges from the GaN photoluminescence spectrum. This mode becomes the dominant feature of the spectrum at higher pump powers, and additional modes appear ∼1.3 nm above and below this mode at 362.1 nm and 364.8 nm. The ∼1.3 nm mode spacing corresponds closely with the 1.1 nm spacing predicted from an electromagnetics model of the VCSEL structure.

Vertical-cavity surface-emitting laser

Optical Pumping

10.1063/1.118104

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Citations (186)

Lateral Ga0.47 Inom53 As and GaAs p-i-n Photodetectors by Self- Aligned Diffusion

Sandip Tiwari J. H. Burroughes M. Milshtein M. A. Tischler Steven L. Wright

Contact-self-aligned diffusion and compositional mixing has been utilized in the fabrication of lateral p-i-n photodetectors in Ga,,,In,,,As and GaAs for 1.3 and 0.85 pm wavelength operation. The p-type contact and diffusion utilizes W(Zn) metallurgy and the n-type contact and diffusion utilizes MoCez metallurgy. Bandwidths exceeding 7.5 and 18.0 GHz, respectively, have been obtained using these structures with bias voltages of = 5 V. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits employing field-effect transistors.

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Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices

Applied Physics Letters (1987)

T. Katsuyama M. A. Tischler N.H. Karam N. A. El-Masry S. M. Bedair

Molecular stream epitaxy allows several molecular beam epitaxy (MBE) concepts to take place in a metalorganic chemical vapor deposition reactor. In this technique, the growth of InGaAs/GaAsP superlattices proceeds by rotating the substrate between two gas streams, one containing trimethylgallium (TMG), triethylindium, and AsH3 and the other containing TMG, PH3, and AsH3. This technique eliminates gas flow transients and provides a method to mechanically shear off the gaseous boundary layer between successive exposures. Ultrathin strained-layer superlattices (SLS’s) with 8-Å-thick films have been obtained. The optical properties of these SLS’s are comparable to those obtained for equivalent superlattices by gas source MBE.

Trimethylgallium

10.1063/1.98388

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The control and modeling of doping profiles and transients in MOVPE growth

Journal of Crystal Growth (1988)

T. F. Kuech P.-J. Wang M. A. Tischler R. M. Potemski G. Scilla

10.1016/0022-0248(88)90594-5

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Citations (63)

Epitaxial Growth

Thomas E Kuech M. A. Tischler

The prelims comprise: Introduction The Epitaxial Process: General Features Chemical Vapor Deposition: Technology and Issues Liquid Phase Epitaxy (LPE) Technology Molecular Beam Epitaxy (MBE) Technology Specific Epitaxial Systems: Materials and Growth Issues Acknowledgement References

Acknowledgement

Liquid phase

10.1002/9783527619290.ch3a

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A GIS framework for surface-layer soil moisture estimation combining satellite radar measurements and land surface modeling with soil physical property estimation

Environmental Modelling & Software (2006)

M. A. Tischler Matthew Garcia C. D. Peters‐Lidard M. Susan Moran Stephen R. Miller

Land Cover

Pedotransfer function

Soil texture

10.1016/j.envsoft.2006.05.022

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Citations (30)

Supersoft-core nucleon-nucleon interaction and circular polarization of the gamma ray in n-p capture

Lettere al nuovo cimento della societa italiana di fisica/Lettere al nuovo cimento (1974)

M. L. Rustgi Taljit S. Sandhu M. A. Tischler

10.1007/bf02756634

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High power silicon carbide IMPATT diode development

G.W. Eldridge D.L. Barrett Albert A. Burk H. McD. Hobgood R.R. Siergiej

IMPATT diode

Source

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Accelerating Geospatial Modeling in ArcGIS with Graphical Processor Units

International Journal of Applied Geospatial Research (2016)

M. A. Tischler

Geospatial data can be enormous in size and tedious to process efficiently on standard computational workstations. Distributing the processing tasks through highly parallelized processing reduces the burden on the primary processor and processing times can drastically shorten as a result. ERSI's ArcGIS, while widely used in the military, does not natively support multi-core processing or utilization of graphic processor units (GPUs). However, the ArcPy Python library included in ArcGIS 10 provides geospatial developers with the means to process geospatial data in a flexible environment that can be linked with GPU application programming interfaces (APIs). This research extends a custom desktop geospatial model of spatial similarity for remote soil classification which takes advantage of both standard ArcPy/ArcGIS geoprocessing functions and custom GPU kernels, operating on an NVIDIA Tesla S2050 equipped with potential access to 1792 cores. The author will present their results which describe hardware and software configurations, processing efficiency gains, and lessons learned.

Python

Geoprocessing

Workstation

Data Processing

10.4018/ijagr.2016100104

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Citations (2)