S. Bengió

Bariloche Atomic Centre

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N. Haberkorn

Balseiro Institute

M. Sirena

Bariloche Atomic Centre

G. Zampieri

DASA (Brazil)

J. Hofer

Balseiro Institute

A.M. Castro Luna

HM Hospitales

A.M. Condó

Bariloche Atomic Centre

S. Suárez

Saarland University

H. Ascolani

Bariloche Atomic Centre

W.E. Triaca

Consejo Nacional de Investigaciones Científicas y Técnicas

Mariano Asteazarán

Consejo Nacional de Investigaciones Científicas y Técnicas

Cooperative Institutions

Consejo Nacional de Investigaciones Científicas y Técnicas

Comisión Nacional de Energía Atómica

Bariloche Atomic Centre

Balseiro Institute

Universidad Nacional de Cuyo

Centro Científico Tecnológico - San Juan

Centre National de la Recherche Scientifique

Centro Científico Tecnológico - Tucumán

Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas

Centro Atómico Constituyentes

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Supported catalysts for alcohol oxidation synthesis and analysis of their catalytic activity

International Journal of Hydrogen Energy (2012)

Silvina Gabriela Ramos A. Calafiore A. Bonesi W.E. Triaca A.M. Castro Luna

Chronoamperometry

Alcohol Oxidation

10.1016/j.ijhydene.2012.01.171

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Citations (16)

CHARACTERIZATION OF METALLIC NANOPARTICLES OVER Ce-Zr MIXED OXIDES BY XPS, TPR AND TEM

Anales/Anales AFA (2014)

A. A. Zelaya I.A. Carbajal-Ramos A.M. Condó F.C. Gennari S. Bengió

Characterization

10.31527/analesafa.2014.25.1.46

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Citations (0)

Thickness dependence of the superconducting properties of γ- Mo2N thin films on Si (001) grown by DC sputtering at room temperature

Materials Chemistry and Physics (2017)

N. Haberkorn S. Bengió Horacio Troiani S. Suárez P.D. Pérez

Residual resistivity

Critical field

10.1016/j.matchemphys.2017.10.015

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Citations (20)

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Nanotechnology (2019)

C. Ferreyra M. J. Sánchez Myriam H. Aguirre C. Acha S. Bengió

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

Neuromorphic engineering

Electromigration

Synaptic weight

10.1088/1361-6528/ab6476

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Citations (12)

Resistive Switching in Ferromagnetic ${\rm La}_{2/3}{\rm Ca}_{1/3}{\rm MnO}_{3}$ Thin Films

IEEE Transactions on Magnetics (2013)

I. Alposta A. Kalstein N. Ghenzi S. Bengió G. Zampieri

Ferromagnetic thin films of La _2/3 Ca _1/3 MnO ₃ manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates. We performed structural, magnetic, spectroscopic, and electrical characterization of the films. Resistive switching between high and low resistance states was obtained upon pulsing with opposite polarities voltages. The I-V curves exhibit sharp transitions between these states. The RS properties are strongly dependant on the films oxygen stochiometry and on the compliance current used for producing the high to low transition. ON/OFF ratios as high as 1000 were obtained for optimal RS conditions. Obtained results are discussed within the framework of mobile oxygen vacancies.

Manganite

Resistive touchscreen

Pulsed Laser Deposition

10.1109/tmag.2013.2258662

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Citations (5)

Searching for suitable catalysts for a passive direct methanol fuel cell cathode

International Journal of Hydrogen Energy (2015)

Mariano Asteazarán Germán Céspedes M. Sergio Moreno S. Bengió A.M. Castro Luna

10.1016/j.ijhydene.2015.05.134

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Citations (11)

Order-disorder phase transition of vacancies in surfaces: The case of Sn/Cu(001)-0.5 ML

Physical Review B (2010)

J. E. Gayone A. Carrera O. Grizzi S. Bengió E. A. Sánchez

We investigate the structural phase transition $(3\sqrt{2}\ifmmode\times\else\texttimes\fi{}\sqrt{2})R45\ifmmode^\circ\else\textdegree\fi{}\ensuremath{\leftrightarrow}(\sqrt{2}\ifmmode\times\else\texttimes\fi{}\sqrt{2})R45\ifmmode^\circ\else\textdegree\fi{}$ of 0.5 ML Sn/Cu(001) using a combination of scanning tunneling microscopy, time-of-flight direct-recoil spectroscopy, and Monte Carlo simulations. Cu vacancies are observed for both phases. At low temperature, Cu vacancies are ordered in a regular array of lines. At high temperature, Sn atoms occupy similar adsorption sites as at low temperature but Cu vacancies are disordered. We conclude that the atomistic mechanism behind the structural phase transition is an order/disorder transition driven by the Cu-vacancy entropy.

10.1103/physrevb.82.035420

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Citations (5)

Absolute mass thickness determination of thin samples by X-ray fluorescence analysis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (1998)

Raúl A. Barrea S. Bengió Pedro A. Derosa Raúl T. Mainardi

X-Ray Fluorescence

Absolute (philosophy)

10.1016/s0168-583x(98)00412-1

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Citations (19)

Superconductivity in low nitrogen concentration stabilized β-tungsten thin films

Materials Letters (2024)

J. Hofer P. Pedrazzini S. Bengió N. Haberkorn

10.1016/j.matlet.2024.136007

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Citations (3)

Tuning the magneto-electrical properties of multiferroic multilayers through interface strain and disorder

arXiv (Cornell University) (2020)

J. Gonzalez Sutter A. Sarmiento Chávez S.R. Soria M. Granada L. Neñer

Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effects on the superlattices with different structural characteristics. The crystalline structure was characterized by X-Ray diffraction and transmission electron microscopy. The magnetic and electronic properties were investigated by SQUID magnetometry and resistance measurements. The results show that both strain and structural disorder can significantly affect the physical properties of the systems. Compressive strain tends to increase the competition between the magnetic interactions decreasing the ferromagnetism of the samples and the localization of the charge carrier through the electron-phonon interaction. Tensile strain reduces the charge carrier localization, increasing the ferromagnetic transition temperature. Structural defects have a stronger influence on the magnetic properties than on the transport properties, reducing the ferromagnetic transition temperature while increasing the magnetic hardness of the superlattices. These results help to further understand the role of strain and interface effects in the magnetic and transport properties of manganite based multiferroic systems.

Manganite

10.48550/arxiv.2006.15748

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Citations (0)