An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.
The intercalated Zn 2+ and abundant interfaces between the conductive V 2 CT x and Zn x V 2 O 5 · n H 2 O can weaken the electrostatic interactions and maintain a large lattice channel during cycling, thus reducing the activation energy of charge transfer.
Interfacial quantum states are drawing tremendous attention recently because of their importance in design of low-dimensional quantum heterostructures with desired charge, spin, or topological properties. Although most studies of the interfacial exchange interactions were mainly performed across the interface vertically, the lateral transport nowadays is still a major experimental method to probe these interactions indirectly. In this Letter, we fabricated a graphene and hydrogen passivated silicon interface to study the interfacial exchange processes. For the first time we found and confirmed a novel interfacial quantum state, which is specific to the 2D–3D interface. The vertically propagating electrons from silicon to graphene result in electron oscillation states at the 2D–3D interface. A harmonic oscillator model is used to explain this interfacial state. In addition, the interaction between this interfacial state (discrete energy spectrum) and the lateral band structure of graphene (continuous energy spectrum) results in Fano–Feshbach resonance. Our results show that the conventional description of the interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding of various interfacial effects in low-dimensional materials, such as proximity effect, quantum tunneling, etc. More important, the Fano–Feshbach resonance may be used to realize all solid-state and scalable quantum interferometers.
There is a need for versatile and effective organic photocatalysts to enable a variety of chemical transformations under mild reaction conditions, and covalent organic frameworks (COFs) are promising crystalline, porous, and sustainable materials for use as heterogeneous photocatalysts. However, prior work with COF photocatalysts has focused primarily on two-dimensional rather than three-dimensional (3D) COF photocatalysts and has not demonstrated the catalysis of both oxidative and reductive transformations. In this work, we investigate the photocatalytic properties of two photoactive 3D COFs. We show that these COFs have broad light absorption and a strong photocurrent response and are effective heterogeneous catalysts for both oxidative and reductive processes, including debromination, chain-growth polymerizations, thiol-ene click reactions, and thiol-ene step-growth polymerizations. Density functional theory calculations demonstrate that these COFs possess strong donor–acceptor and charge carrier separation properties and have appropriate energy level alignments for debromination and thiol oxidation reactions. This work demonstrates the enormous potential of photoactive 3D COFs as both reductive and oxidative photocatalysts.
Metal-semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal-semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.
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