Wafer-to-wafer (W2W) hybrid bonding has gained more attention as the Artificial intelligence (AI) and big data machine learning (ML) applications required higher interconnect densities. This paper presents our research to demonstrated Cu/SiCN W2W hybrid bonding down to PAD Pitch 700nm. We have proven good Cu-Cu connectivity performance in both long daisy chains and kelvin resistor devices. Atomic Force Microscope (AFM) measurement is used to analyze the pre-bonding materials properties, namely Cu PAD height, dielectric surface profile and roughness. This enables, together with good W2W hybrid bonding overlay control, high electrical yield.
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