Pinhe Wang

Technical University of Denmark

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Ziwei Ouyang

Technical University of Denmark

Michael A. E. Andersen

Mayo Clinic in Arizona

Tiberiu‐Gabriel Zsurzsan

Technical University of Denmark

Jiasheng Huang

Technical University of Denmark

S. Kaldor

IBM (United States)

I. C. Noyan

Columbia University

Jean Jordan-Sweet

Brookhaven National Laboratory

Bima Nugraha Sanusi

Technical University of Denmark

R. G. Filippi

GlobalFoundries (United States)

C.-C. Yang

IBM (United States)

Cooperative Institutions

IBM (United States)

GlobalFoundries (United States)

IBM Research - Thomas J. Watson Research Center

Essex Westford School District

Technical University of Denmark

Harbin Institute of Technology

University at Albany, State University of New York

Columbia University

SUNY Polytechnic Institute

Massachusetts Institute of Technology

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

A Half-turn Winding Layout in Planar Transformers

Chao Liu Pinhe Wang Zhe Zhang Jiasheng Huang Michael A. E. Andersen

This paper presents an analysis of the current distribution on the parallel conductors of typical interleaved planar transformers. Through the investigation, it is discovered that the S-P-S-P-S winding layout with "n+1" parallel layers exhibits a half-turn winding current distribution, resulting in lower AC resistance. Simulation and experiment results are used to validate the current distribution in the proposed half-turn transformer, demonstrating a nearly 20% reduction in winding loss and leakage inductance compared to conventional layouts.

Leakage inductance

Turn (biochemistry)

Equivalent series inductance

10.23919/epe23ecceeurope58414.2023.10264549

Cite

Citations (0)

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

IBM Journal of Research and Development (2008)

Alvin Joseph J. D. Gillis M. Doherty Peter Lindgren Rosemary Previti-Kelly

We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application.

BiCMOS

Wire bonding

10.1147/jrd.2008.5388563

Cite

Citations (37)

Parasitic Inductance Cancellation for EMI Filter Capacitors Using Mutual Coupling

Pinhe Wang Bima Nugraha Sanusi Chao Liu Jiasheng Huang Ziwei Ouyang

Parasitic inductance of capacitors degrades the high frequency (HF) performance of electromagnetic interference (EMI) filters. In this paper, a new method of equivalent series inductance (ESL) cancellation for capacitors is proposed systematically. Firstly, a two-port network using mutual inductance is modeled and analyzed for parasitic inductance cancellation, and formulas deduction is demonstrated. Then, a symmetrical PCB layout is proposed for implementation. Finally, the proposed method is verified by experimental results. In the studied case, the ESL of the X-capacitor has been effectively cancelled up to 40MHz. And the differential-mode (DM) noise of the active clamping flyback converter can be reduced obviously from around 3.5MHz to 30MHz.

Equivalent series inductance

LCR meter

Filter capacitor

Parasitic element

Parasitic capacitance

Parasitic extraction

10.23919/icpe2023-ecceasia54778.2023.10213662

Cite

Citations (3)

An Isolated Hybrid Sigma Bi-directional BESS Interface with Extra-Wide Voltage Gain

Bima Nugraha Sanusi Pinhe Wang Ziwei Ouyang

Sigma

Interface (matter)

10.1109/ipemc-ecceasia60879.2024.10567158

Cite

Citations (0)

Vertical LLC Converter for High-Current Datacenter Application

Pinhe Wang Bima Nugraha Sanusi Tiberiu‐Gabriel Zsurzsan Michael A. E. Andersen Ziwei Ouyang

10.1109/ipemc-ecceasia60879.2024.10567371

Cite

Citations (0)

Deformation field in single-crystal fields semiconductor substrates caused by metallization features

Applied Physics Letters (1999)

I. C. Noyan Pinhe Wang S. Kaldor Jean Jordan‐Sweet

The results of an x-ray microdiffraction study of the deformation field surrounding Ni thin film pads on a 111-type Si wafer are reported. The strain fields were mapped by measuring the Si 333 reflection intensities over an area containing several pads. The positions of the pads were simultaneously determined by recording the Ni Kα fluorescence as a function of position. The results indicate that, contrary to the results from analytical solutions and finite-element models, the position of maximum strain contrast is slightly outside the pad edge.

Reflection

Position (finance)

Crystal (programming language)

10.1063/1.123848

Cite

Citations (31)

A High-Efficiency and High-Power-Density Partial Power Buck-Boost Converter

IEEE Journal of Emerging and Selected Topics in Power Electronics (2024)

Di Wu Pinhe Wang Yanda Lyu Michael A. E. Andersen Ziwei Ouyang

This paper initiates a comprehensive exploration of two distinct partial power structures firstly, input-parallel output-series (IPOS) and input-series output-parallel (ISOP), emphasizing their specialized applications. Using efficiency and power processing models, the analysis determines the most suitable partial power topology based on specific requirements, revealing IPOS as superior for step-up applications and ISOP excelling in step-down scenarios. Beyond theoretical analysis, the research includes the development of a dedicated two-phase synchronous buck-boost converter for a broad input voltage range (38 V to 72 V DC) and a fixed output voltage of 107 V DC. Furthermore, emphasizing efficiency maximization, the paper explores various zero-voltage-switching (ZVS) control strategies, introducing an innovative hybrid control strategy that surpasses traditional critical conduction mode (CRM) control in power density and fix-frequency control in efficiency, achieving over 98% efficiency. Experimental validation using a prototype validates the effectiveness of these control strategies, providing practical support for the applicability of IPOS and ISOP structures in targeted power processing applications. Furthermore, the results highlight the strength of the hybrid control strategy, particularly in comparison with CRM control and fixed-frequency control mode (FCM).

Buck converter

10.1109/jestpe.2024.3406132

Cite

Citations (1)

Images of local tilted regions in strain-relaxed SiGe layers

Physica B Condensed Matter (1999)

P. M. Mooney Jean Jordan‐Sweet I. C. Noyan S. Kaldor Pinhe Wang

Strain (injury)

Lattice (music)

10.1016/s0921-4526(99)00585-2

Cite

Citations (5)

Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics

Pinhe Wang R. G. Filippi L. Gignac

We demonstrate the electromigration threshold, or the so-called short-length effect, in single-damascene copper interconnects with SiO/sub 2/ dielectrics. With standard electrical lifetime measurements and a simplified equation based on the Blech model, the length-dependent electromigration behavior is studied quantitatively over a temperature range between 295/spl deg/C and 400/spl deg/C. It is shown that the electromigration threshold becomes more prominent with decreasing temperature. The applicability of the proposed equation is justified, and the practical aspects of the electromigration threshold in copper technologies are discussed.

Electromigration

Copper interconnect

Low-k dielectric

Chemical Mechanical Planarization

10.1109/iitc.2001.930079

Cite

Citations (6)

Inductance and Parasitic Capacitance Modeling of Spiral Air-core Inductor in MHz Inductive Power Transfer System

2022 IEEE Applied Power Electronics Conference and Exposition (APEC) (2023)

Jiasheng Huang Yi Dou Pinhe Wang Ziwei Ouyang Michael A. E. Andersen

Air-core inductors are widely applied in high-frequency inductive power transfer (IPT) systems. However, its behavior at high frequencies is very different from that at low frequencies due to parasitic capacitance. In order to estimate the parasitic parameters of the air-core inductors at the design phase and avoid the designed inductors working at the capacitive range, this paper investigates the model of a spiral air-core inductor, including inductance and parasitic capacitance. Compared with previous models, which neglected the capacitance between non-adjacent turns, the proposed one considers all the turn-to-turn capacitance to obtain a more accurate result. The proposed model was verified by simulation and experimental measurement. The calculation, simulation, and measurement results are in good agreement. Compared to the measured results, the errors of the calculated inductance, capacitance, and self-resonant frequency are 2.0%, 7.4 %, and 4.1 %, respectively. Therefore, the proposed model is applicable to estimate inductance and parasitic capacitance for designing a better high-frequency air-core inductor.

Parasitic capacitance

Equivalent series inductance

Electrical reactance

Parasitic extraction

10.1109/apec43580.2023.10131527

Cite

Citations (0)