Shunchong Wang

Institute of Physics

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Gang Wang

Xiamen University

Xiaolong Chen

University of Chinese Academy of Sciences

Shifeng Jin

Yunnan Institute For Drug Abuse

Kaixing Zhu

Qingdao University of Science and Technology

Meng He

Chinese Academy of Sciences

Jiangang Guo

Institute of Physics

Tingting Zhou

Chinese Academy of Sciences

Yu Liu

University of Copenhagen

Chunhua Xu

Zhongyuan University of Technology

Xiaofang Lai

Guangdong University of Technology

Cooperative Institutions

Chinese Academy of Sciences

Institute of Physics

National Laboratory for Superconductivity

University of Chinese Academy of Sciences

University at Buffalo, State University of New York

Songshan Lake Materials Laboratory

Czech Academy of Sciences, Institute of Physics

United States Naval Research Laboratory

Jilin University

Nankai University

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Recent developments of novel Fe-based superconductors

Guo Jian-Gang Jin Shifeng Gang Wang Shunchong Wang Zhu Kaixing

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Observation of stimulated emission from a single Fe-doped AlN triangular fiber at room temperature

Scientific Reports (2015)

Liangbao Jiang Shifeng Jin Wenjun Wang Sibin Zuo Zhilin Li

Abstract Aluminum nitride (AlN) is a well known wide-band gap semiconductor that has been widely used in fabricating various ultraviolet photo-electronic devices. Herein, we demonstrate that a fiber laser can be achieved in Fe-doped AlN fiber where Fe is the active ion and AlN fiber is used as the gain medium. Fe-doped single crystal AlN fibers with a diameter of 20–50 μm and a length of 0.5–1 mm were preparated successfully. Stimulated emission (peak at about 607 nm and FWHM ~0.2 nm) and a long luminescence lifetime (2.5 ms) were observed in the fibers by a 532nm laser excitation at room temperature. The high quality long AlN fibers are also found to be good optical waveguides. This kind of fiber lasers may possess potential advantages over traditional fiber lasers in enhancing power output and extending laser wavelengths from infrared to visible regime.

10.1038/srep17979

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Self Difference Frequency Generation in 4H-SiC

Advanced Solid-State Lasers Congress (2013)

Minjie Zhan Shunchong Wang Gang Wang Hongwen Xuan Chunjun Liu

We demonstrated a new effective nonlinear material 4H-SiC for broadband mid-infrared radiation. Phase-matched difference frequency generation in 4H-SiC is successful obtained. 4H-SiC has great potential applications in high power mid-infrared lasers for its outstanding material properties.

Frequency Conversion

Wide-bandgap semiconductor

10.1364/assl.2013.am3a.7

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Infrared Kerr measurements in ferromagnetic silicon carbide

APS March Meeting Abstracts (2012)

Alok K. Mukherjee Chase T. Ellis N. Tesařová John Cerne Yu Liu

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Temperature dependence of refractive indices for 4H- and 6H-SiC

Journal of Applied Physics (2014)

Chunhua Xu Shunchong Wang Gang Wang Jingkui Liang Shanpeng Wang

The refractive indices of 4H- and 6H-SiC single crystals at wavelengths of 404.7, 435.8, 480.0, 546.1, 587.5, 643.8, 706.5, 852.1, 1014.0, 1529.6, and 2325.4 nm are carefully measured from 293 to 493 K by the method of minimum deviation. We find that ordinary (no) and extraordinary (ne) refractive indices for both crystals increase with the elevated temperature. The temperature-dependent Sellmeier equations of refractive indices for 4H- and 6H-SiC are obtained and then thermo-optic coefficients (TOCs) are derived. The TOCs diminish very quickly at visible light region and become less dependent in the infrared light region. Such changing trends of TOCs can be explained by single-oscillator approximation. The results may provide the important reference value for designing the optoelectronic and nonlinear optical devices based on SiC.

10.1063/1.4868576

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Giant mid-infrared Kerr enhancement from films on SiC

Bulletin of the American Physical Society (2015)

Alok K. Mukherjee M. Arik Chase T. Ellis Payam Taheri Andreas V. Stier

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ChemInform Abstract: Stable Oxoborate with Edge‐Sharing BO₄ Tetrahedra Synthesized under Ambient Pressure.

ChemInform (2010)

Shifeng Jin Gemei Cai Wanyan Wang Mengchang He Shunchong Wang

Abstract KZnB 3 O 6 is synthesized under ambient pressure from a stoichiometric mixture of K 2 CO 3 , ZnO, and H 3 BO 3 (500 °C for 12 h and annealing at 750 °C for 24 h).

Stoichiometry

Tetrahedron

Ambient pressure

10.1002/chin.201040014

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Superconductivity in the iron selenideKxFe2Se2(

Physical Review B (2010)

Jiangang Guo Shifeng Jin Gang Wang Shunchong Wang Kaixing Zhu

We report the superconductivity at above 30 K in a FeSe-layer compound ${\text{K}}_{0.8}{\text{Fe}}_{2}{\text{Se}}_{2}$ (nominal composition) achieved by metal K intercalating in between FeSe layers. It is isostructural to ${\text{BaFe}}_{2}{\text{As}}_{2}$ and possesses the highest ${T}_{c}$ for FeSe-layer materials so far under ambient pressure. Hall effect indicates the carriers are dominated by electron in this superconductor. We confirm that the observed superconductivity at above 30 K is due to this FeSe-based 122 phase. Our results demonstrate that FeSe-layer materials are really remarkable superconductors via structure and carrier modulation.

Selenide

Isostructural

10.1103/physrevb.82.180520

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Citations (1,145)

Stable Oxoborate with Edge‐Sharing BO₄ Tetrahedra Synthesized under Ambient Pressure

Angewandte Chemie International Edition (2010)

Shifeng Jin Gemei Cai Wanyan Wang Meng He Shunchong Wang

Back from the extreme: The formation of edge-sharing BO4 tetrahedra is excluded from borate structure chemistry and only rarely presents itself under extremely high pressure. Now this structure has been observed in an ambient pressure borate. Unlike high-pressure metastable phases, the title compound is stable up to its melting point. The tunnel structure of the compound is also accessible to mobile ions.

Tetrahedron

Metastability

Ambient pressure

10.1002/anie.200907075

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Citations (111)

Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals

Physical Review Letters (2011)

Yu Liu Gang Wang Shunchong Wang Jianhui Yang Liang Chen

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

Magnetism

10.1103/physrevlett.106.087205

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Citations (155)