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В. И. Кушниренко

V.E. Lashkaryov Institute of Semiconductor Physics

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L. Borkovska

V.E. Lashkaryov Institute of Semiconductor Physics

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И. В. Маркевич

V.E. Lashkaryov Institute of Semiconductor Physics

N. Korsunska

National Academy of Sciences of Ukraine

B. M. Bulakh

V.E. Lashkaryov Institute of Semiconductor Physics

T. Kryshtab

Instituto Politécnico Nacional

L. Khomenkova

V.E. Lashkaryov Institute of Semiconductor Physics

T. V. Zashivailo

National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”

V.P. Kladko

V.E. Lashkaryov Institute of Semiconductor Physics

V. S. Khomchenko

V.E. Lashkaryov Institute of Semiconductor Physics

A. V. Rusavsky

V.E. Lashkaryov Institute of Semiconductor Physics

Cooperative Institutions

V.E. Lashkaryov Institute of Semiconductor Physics

National Academy of Sciences of Ukraine

Institute of Semiconductor Physics

Institute of Semiconductors

Institute of Physics

Institute of Software Systems

V. Bakul Institute for Superhard Materials

National Academy of Sciences

Russian Academy of Sciences

University of South Florida

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Влияние зон высокочастотной фрагментированной активности миокарда левого предсердия на поддержание фибрилляции предсердий

Вісник морської медицини (2017)

А И Гоженко Ю. І. Карпенко Е. Млевченкo А. В. Горячий В. И. Кушниренко

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Study of thermal stability of CdSe/ZnSe quantum dot heterostructures

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2012)

L. Borkovska N. Korsunska В. И. Кушниренко T. Stara V.P. Kladko

Abstract Here we report on the effect of post‐growth thermal annealing at 200‐440 °C on the photoluminescence (PL) characteristics of CdSe/ZnSe quantum dot (QD) and CdZnSe/ZnSe quantum well (QW) heterostructures grown by molecular beam epitaxy. After heat treatment at temperatures lower than 270 °C, the PL intensity from both type of structures increases, while at temperatures above 270‐340 °C it decreases. A blue shift of the excitonic band position caused by Cd out‐diffusion from the QDs (QWs) is observed above 320‐340 °C and is five times larger for the QD‐related PL band than for the QW one. It is found that the energy of the excitonic transitions in the wetting layers does not change upon annealing. Lower thermal stability of the QDs as compared to that of the wetting layer and of the QW is explained by lateral Cd/Zn interdiffusion in the wetting layers via column II vacancies (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Wetting layer

Thermal Stability

10.1002/pssc.201100603

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Citations (2)

Journal of Luminescence (2012)

В. И. Кушниренко И. В. Маркевич T. V. Zashivailo

Photoconductivity

Lattice (music)

10.1016/j.jlumin.2012.03.029

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Luminescence properties of Ag‐, Ga‐doped ZnO and ZnO‐ZnS thin films

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2012)

В. И. Кушниренко V. S. Khomchenko T. V. Zashivailo L. V. Zavyalova

Abstract Thin films of ZnS were grown by metal‐organic chemical vapor deposition (MOCVD) method under atmospheric pressure onto glass substrates. ZnO–ZnS:[Ag, Ga] and ZnO:[Ag, Ga] thin films were prepared by oxidation and Ag, Ga doping of ZnS films at temperatures of 700–775 °C for 0.5–1 h. Crystalline quality and luminescent properties were investigated using X‐ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. It is found that the doped films have a polycrystalline structure without preferred orientation and consist of small grains gathered into conglomerates. The shape of photoluminescence (PL) spectra of the films depends strongly on the preparation conditions. The ZnO–ZnS:[Ag, Ga] films exhibited the blue and green emission connected with the presence of silver and oxygen, respectively. The ZnO:[Ag, Ga] films revealed the white emission originated from different defect‐related transitions. The possible origin of radiative centers is discussed (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

10.1002/pssc.201100618

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Photoluminescence engineering in polycrystalline ZnO and ZnO-based compounds

AIMS Materials Science (2016)

И. В. Маркевич T. Stara L. Khomenkova В. И. Кушниренко L. Borkovska

The results of the investigations of photoluminescence (PL) in ZnO and ZnO-based composite materials are presented. The PL and PL excitation (PLE) spectra of undoped and doped with I group elements or rear earth ions ZnO polycrystalline films, ZnO, Zn_1–xMg_xO and ZnMgO–TiO₂ ceramics were studied. The structural properties of the samples were investigated with X-ray diffraction. Polycrystalline films were prepared by a screen-printing method and annealed at T_S= 500–1000 °C. The films annealed at T_S< 800 °C exhibited intense UV emission, whereas defect-related one appeared at 800 °C and enhanced with increasing T_S. Improvement of the PL and structural characteristics of ZnO films due to Li-doping were achieved. The PL bands caused by Sm and Ho ions were observed under ZnO band-to-band excitation. In the PL spectra of ZnO and Zn_1–xMg_xO ceramics, two types of PL bands were separated: i) the bands, whose spectral positions were not influenced by the Mg content (green Cu-related as well as self-activated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (orange Li- and Ag-related and self-activated green ones). In the PL spectra of ZnMgO–TiO₂ composites, an intense red emission was found to appear in addition to the broad blue-orange band inherent in ZnMgO alloy. The red emission was ascribed to Mg₂TiO₄inclusions in ZnMgO matrix.

Blueshift

10.3934/matersci.2016.2.508

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Role of excitons in the excitation of deep‐level emission in ZnO crystals

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2010)

В. И. Кушниренко И. В. Маркевич L. Borkovska B. M. Bulakh

Abstract In undoped ZnO crystals, photoluminescence excitation (PLE) spectra of deep‐level green and orange PL bands as well as photocurrent (PC) spectra were measured at 77 and 290 K. Some PLE and PC peaks whose energy positions coincided with that of free exciton and its excited states were observed, the intensity of PL and PC excited in these peaks being higher than under excitation by band‐to‐band light. At the same time, a sharp minimum was found in PLE and PC spectra at the position of donor‐bound exciton. Obtained results were accounted for by the interaction of excitons with lattice defects. A number of longer wavelength PLE and PC peaks whose energy positions coincided in fact with that of the first, second and third phonon replicas of free exciton were also observed. The origin of these peaks is discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Photocurrent

10.1002/pssc.200983231

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Citations (4)

Fabrication and properties of ZnO:Cu and ZnO:Ag thin films

Superlattices and Microstructures (2007)

V. S. Khomchenko T. Kryshtab Aliaksandr Savin L. V. Zavyalova N. N. Roshchina

Sublimation

10.1016/j.spmi.2007.04.016

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Citations (69)

Influence of boric acid as a flux on the properties of ZnO ceramics