Rhenium disulfide (ReS 2 ), one of the typical representatives of 2D layered transition metals dichalcogenide materials, has attracted widespread attention for its optical modulation properties in lasers. In this letter, a high-quality ReS 2 nanosheet film-based saturable absorber (SA) was successfully prepared by a liquid phase exfoliation method and employed into a passively Q -switched Ho,Pr:LiLuF 4 bulk laser operating at 2.95 μm. The maximum output power of 103 mW was obtained with the shortest pulse duration of 676 ns and a repetition rate of 91.5 kHz, corresponding to the single pulse energy of 1.13 μJ and a pulse peak power of 1.67 W, respectively. The results indicate that ReS 2 is a promising SA for mid-infrared pulse generation.
Few-layer SnSe2 was successfully fabricated by liquid phase exfoliation method. A passive Q-switched Tm:YAP laser at the wavelength of 1940 nm was demonstrated by using SnSe2 saturable absorber (SA). Under absorbed pump power of 4.9 W, 400 mW Q-switched was achieved with the pulse width of 1.29 μs and the repetition rate of 109.77 kHz. The results indicate the promising potential of SnSe2 nanosheets as SA to achieve efficient pulsed lasers at around 2 μm.
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