Shi-Jane Tsai

National Central University

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Nianduan Lu

Institute of Microelectronics

Hongming Wu

Nanjing Tech University

T. M. Hsu

National Central University

Yiren Chen

Capital Institute of Pediatrics

J. R. Wu

National Central University

Hao-Hsiung Lin

National Taiwan University

H. C. Ho

National Taiwan University

Yu‐Chi Chang

National Taiwan University

D. G. Liu

National Yang Ming Chiao Tung University

Y. C. Tien

National Central University

Cooperative Institutions

National Taiwan University

National Yang Ming Chiao Tung University

National Central University

Institute of Electronics

Chinese Academy of Sciences

National Tsing Hua University

Capital Institute of Pediatrics

Changchun Institute of Optics, Fine Mechanics and Physics

Guangdong Medical College

Kaohsiung Chang Gung Memorial Hospital

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Ordering InGaP epilayer directly grown on Ge substrate

Thin Solid Films (2014)

Hongming Wu Shi-Jane Tsai Yu‐Chi Chang Yiren Chen Hao-Hsiung Lin

10.1016/j.tsf.2014.04.039

Cite

Citations (6)

Franz–Keldysh oscillations of δ-doped GaAs

Journal of Applied Physics (1992)

T. M. Hsu Y. C. Tien Nianduan Lu Shi-Jane Tsai D. G. Liu

Si-δ-doped GaAs (N2D ≊ 1011 cm−2) samples grown by molecular-beam epitaxy are investigated by using photoreflectance spectroscopy. The oscillations observed above the GaAs fundamental band gap are attributed to the Franz–Keldysh effect in the region between the δ-doped layer and the crystal surface. This ascription is confirmed by detailed studies through varying the cap thickness (250–2500 Å), temperature (10–450 K), and laser pump power (0.05–7 mW/cm2). The surface potential deduced from the Franz–Keldysh oscillations is found to be temperature and laser pump power dependent, which is explained by taking the surface photovoltaic effect into account. The surface Fermi level has been measured by this method and is found to have the value 0.73±0.02 V.

Crystal (programming language)

Ascription

10.1063/1.351780

Cite

Citations (41)

Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

Journal of Applied Physics (2016)

Hongming Wu Shi-Jane Tsai H. C. Ho Hao‐Hsiung Lin

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for the deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.

10.1063/1.4944322

Cite

Citations (4)

Differential photoreflectance of Si-δ-doped GaAs

Journal of Applied Physics (1994)

T. M. Hsu Nianduan Lu Shi-Jane Tsai J. R. Wu

The signals from buried layer in Si-δ-doped GaAs of different undoped cap thickness have been studied by differential photoreflectance. The first-derivative-like line shape of differential photoreflectance is attributed to the energy transitions related to the modulations of two-dimensional electron gas density. We have observed a change of line shape at low temperatures. This change of line shape is probably due to the change of potential distribution in the conduction band, which is caused by the surface Fermi-level pinning and surface photovoltaic effect.

Line (geometry)

10.1063/1.356148

Cite

Citations (4)