Cristian Collini

Fondazione Bruno Kessler

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Leandro Lorenzelli

Fondazione Bruno Kessler

Andrea Adami

Fondazione Bruno Kessler

Ravinder Dahiya

Northeastern University

Elisa Morganti

University of Naples Federico II

Lorenzo Lunelli

Fondazione Bruno Kessler

Cecilia Pederzolli

Fondazione Bruno Kessler

C. Ress

Fondazione Bruno Kessler

Salvatore Iannotta

Institute of Materials for Electronics and Magnetism

B. Margesin

Fondazione Bruno Kessler

Valentina Prusakova

University of Trento

Cooperative Institutions

Fondazione Bruno Kessler

University of Trento

National Research Council

Institute for Microelectronics and Microsystems

University of Milan

Institute of Materials for Electronics and Magnetism

National Academies of Sciences, Engineering, and Medicine

Istituto Centrale per la Ricerca Scientifica e Tecnologica Applicata al Mare

Construction Technologies Institute

Kessler Foundation

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Through Silicon Vias in MEMS packaging, a review

Guido Sordo Daniel Nilsen Wright Sigurd Moe Cristian Collini

Electronic Packaging

Integrated circuit packaging

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Citations (1)

On-wafer electro-mechanical characterization of silicon MEMS switches

Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (2004)

Leandro Lorenzelli Kamaljit Rangra Cristian Collini Flavio Giacomozzi B. Margesin

The feasibility of integrating the RF MEMS switches in space and wireless communication systems has generated tremendous interest in related design, fabrication and characterization methodologies. The space applications make long term reliability of the devices a very pertinent issue and involves both the process and device characterization. In this paper we describe the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30 GHz applications. The on-wafer experimental setup, based on standard manual microprobe station provides dual pulse actuation voltage waveforms with programmable period and amplitude, ranging from 10/sup -5/ to 1 sec and 0-200 volts respectively. The usefulness of the dual-pulse testing is demonstrated by the minimal charge generation in the dielectric layer and capacitance measurements with negligible variations over long measurement periods.

Characterization

Ranging

10.1109/dtip.2003.1287053

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Citations (3)

Optimisation and memristive response of sol-gel derived TiO<inf>2</inf> thin films

Valentina Prusakova Sandra Dirè Cristian Collini Laura Pasquardini L. Vanzetti

Herein, we developed a series of Pt/TiO ₂ /Pt/Ti/SiO ₂ resistive switching materials with a variation in chemical composition of TiO ₂ in an attempt to evaluate the parameters affecting the memristive switching behavior and, therefore, to optimize and control it. Different chemical compositions of TiO ₂ were obtained by annealing the films at 400 °C for 1 hour in diverse atmospheric conditions, such as air, vacuum and oxygen environments. The elemental composition of the produced samples was analyzed by X-ray photoelectron spectroscopy (XPS), revealing the different stoichiometric ratio of Ti/O and doping/contamination with silicon, carbon, and nitrogen depending on the annealing conditions. The preliminary I-V curves were acquired with Pt dish or wire, serving as a top electrode. The results showed a superior stability, durability and reproducibility of the resistive switch behavior observed in the samples containing oxidized silicon impurities. In addition to the electrical studies, the evolution of Pt dish top electrode was monitored by optical microscopy and scanning electron microscopy (SEM), revealing mechanical and electrochemical damage of the electrode during the electroforming step.

10.1109/aisem.2015.7066806

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Citations (5)

Symmetric toggle switch—a new type of rf MEMS switch for telecommunication applications: Design and fabrication

Sensors and Actuators A Physical (2005)

Kamaljit Rangra B. Margesin Leandro Lorenzelli Flavio Giacomozzi Cristian Collini

Crossover switch

10.1016/j.sna.2005.03.035

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Citations (69)

Comparative Bioaffinity Studies for In-Vitro Cell Assays on MEMS-Based Devices

Lecture notes in electrical engineering (2009)

C. Ress L. Odorizzi Cristian Collini Leandro Lorenzelli Stefania Forti

Microplasma

10.1007/978-90-481-3606-3_13

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Citations (2)

Electro-Mechanical Performance Analysis of RF MEMS Switches

Leandro Lorenzelli Kamaljit Rangra Cristian Collini Flavio Giacomozzi B. Margesin

The feasibility of integrating the RF MEMS switches in space and wireless communication systems has generated tremendous interest in related design, fabrication and characterization methodologies. The space applications make long term reliability of the devices a very pertinent issue and involves both the process and device characterization. In this paper we describe the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30GHz applications. The on-wafer experimental setup, based on standard manual microprobe station provides dual pulse actuation voltage waveforms with programmable period and amplitude. The usefulness of the dual-pulse testing is demonstrated by the minimal charge generation in the dielectric layer and capacitance measurements with negligible variations over long measurement periods.

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Citations (1)

Micromachined low actuation voltage RF MEMS capacitive switches, technology and characterization

Kamaljit Rangra Flavio Giacomozzi B. Margesin Leandro Lorenzelli Viviana Mulloni

In this paper we report the realization and characterization of low-loss, capacitive RF MEMS switches that utilize folded serpentine spring suspensions with large area actuation electrodes. The surface micromachined switches with 1.7 /spl mu/m thick electroplated gold beams are implemented in standard 50 ohm CPW configuration. The electromechanical characterization indicates the measured actuation voltages in the range of 8 - 15 volts. The RF measurements of devices give insertion loss of 0.24 dB and isolation better than 21 dB at 20 GHz.

Characterization

10.1109/smicnd.2004.1402830

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Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

AIP conference proceedings (2015)

G. Baldi Matteo Bosi Giovanni Giusti G. Attolini Tatiana Berzina

We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer.Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide.Nanocrystalline TiO 2 thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess.Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry.Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm.We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic.The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

Morphology

10.1063/1.4912531

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Citations (4)

Planar Silicon-Polydimethylsiloxane Optofluidic Ring Resonator Sensors

IEEE Photonics Technology Letters (2015)

Genni Testa Cristian Collini Leandro Lorenzelli Romeo Bernini

We report an optofluidic ring resonator sensor based on liquid-core hybrid silicon-polymer waveguides. The device features a planar layout that combines optical and fluidic functions on the same platform. A high quality factor of 1.44 × 104 is achieved. The device resonant wavelength shift has been measured as a function of the water-core temperature, obtaining a temperature sensitivity of 0.0633 nm/°C. Based on the thermo-optic effect of water, this corresponds to a bulk refractive index (RI) sensitivity of ~700 nm per RI unit (RIU), resulting in the RI limit of detection of ~1.57 × 10 ^- 6 RIU. The planar architecture combined with an optofluidic design concept holds the promise of high functionality and compactness toward a complete on-chip integrated sensing system.

Polydimethylsiloxane

Fluidics

Optofluidics

10.1109/lpt.2015.2487680

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Citations (20)

POSFET tactile sensing chips using CMOS technology

IEEE Sensors (2013)

Ravinder Dahiya Andrea Adami Cristian Collini Maurizio Valle Leandro Lorenzelli

This work presents the advanced version of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. The tactile sensing chip in the new version, presented here, has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 × 4 POSFET touch sensing devices, four temperature diodes, and the electronic circuitry comprising of multiplexers, current mirrors, high compliance current sinks and voltage output buffers. The on chip POSFET devices have linear response in the tested dynamic contact forces range of 0.01-3N and the sensitivity (without amplification) is 102.4 mV/N.

Tactile sensor

10.1109/icsens.2013.6688149

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Citations (43)