Kentaro Ema

Abstract High uniformity of the thickness and net donor concentrations ( N d - N a ) in 100 mm diameter β -Ga 2 O 3 (001) epitaxial wafer prepared by halide vapor phase epitaxy was demonstrated. An epitaxial wafer grown on a substrate with a miscut angle near 0° generated a specific epitaxial region with a lower growth rate and a higher N d - N a than the rest of the region, which deteriorated the wafer uniformity. In contrast, epitaxial wafers prepared on substrates with a miscut angle of –0.1° suppressed the occurrence of the specific epitaxial region, and an average thickness after chemical mechanical polishing of 10.6 μ m with 5% tolerance and an average N d - N a without intentionally doping of 1.1 × 10 16 cm −3 within 7% tolerance were successfully obtained.

Vapor phase

10.35848/1347-4065/acb4fb

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Growth of β -Gallium Oxide by Tri-Halide Vapor Phase Epitaxy

The Japan Society of Applied Physics (2020)

Kentaro Ema N. Ogawa Kohei Sasaki Akito Kuramata Hisashi Murakami

Gallium Oxide

Vapor phase

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Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy

Japanese Journal of Applied Physics (2021)

Kentaro Ema Ryohei Hieda Hisashi Murakami

Lattice-relaxed thick InGaN films could be obtained using patterned sapphire substrates (PSSs) by tri-halide vapor phase epitaxy. Furthermore, by inserting the GaN intermediate layer between the InGaN epilayer and the PSS, the crystalline quality of the InGaN epilayer was drastically improved. According to the X-ray diffraction ω-rocking curve measurements, the full width at half maximum of the InGaN epilayer was 850 arcsec around the symmetrical reflection and 967 arcsec around the skew-symmetrical reflection. It was also found that the thickness of the GaN intermediate layer influences the crystalline quality of the InGaN epilayer. As the thickness of the GaN intermediate layer increases, the crystalline quality of the GaN intermediate layer gets higher, resulting in the crystalline quality of the InGaN epilayer was improved.

Vapor phase

Lattice (music)

10.35848/1347-4065/ac1e46

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Citations (1)

Growth of lattice-relaxed InGaN thick films by tri-halide vapor phase epitaxy

OPTICS & PHOTONICS International Congress (2019)

Kentaro Ema

Vapor phase

Lattice (music)

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Homo- and hetero-epitaxial growth of β-gallium oxide via GaCl3-O2-N2 system

Journal of Crystal Growth (2021)

Kentaro Ema Kohei Sasaki Akito Kuramata Hisashi Murakami

Partial pressure

Vapor phase

Gallium Oxide

10.1016/j.jcrysgro.2021.126129

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Observation of excitonic strings in a quasione dimensional charge transfer crystal

International Quantum Electronics Conference (1994)

N. Peyghambarian B. Fluegel Kenith E. Meissner Fan Guo S. Mazumder

The three dimensional translational symmetry of inorganic semiconductor crystals gives rise to collective excitations such as plasmons, rotons, electron-hole liquid, and excitonic molecules. Here, we show experimentally and theoretically that in a quasione-dimensional charge transfer (CT) organic crystal, the Coulomb attraction of CT excitons can form n-string excitons: bound states of several (more than two) excitons.1

Translational symmetry

Crystal (programming language)

Biexciton

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