J. Kumar

Motilal Nehru National Institute of Technology

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P. Jayavel

Western Digital (United States)

S. Arulkumaran

Nanyang Technological University

K. Asokan

Inter-University Accelerator Centre

Sunil Sazawal

Public Health Laboratory Ivo de Carneri

N. Dharmarasu

Nanyang Technological University

D. Kanjilal

Inter-University Accelerator Centre

V. Ramakrishnan

Madurai Kamaraj University

Vivek Kumar Patel

Motilal Nehru National Institute of Technology

Venugopal P. Menon

Saint Vincent Hospital

M. Udhayasankar

Anna University, Chennai

Cooperative Institutions

Anna University, Chennai

Indian Institute of Technology Madras

Annamalai University

University of Madras

Inter-University Accelerator Centre

Indira Gandhi Centre for Atomic Research

Johns Hopkins University

Motilal Nehru National Institute of Technology

University of Parma

Institute of Materials for Electronics and Magnetism

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CCDC 287590: Experimental Crystal Structure Determination

The Cambridge Structural Database (2005)

S. Athimoolam J. Kumar V. Ramakrishnan R. Rajaram

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.

10.5517/cc9n839

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Effect of Irradiation Induced Interface Defects on GaAs Schottky Diodes

SPIE eBooks (1998)

N. Dharmarasu S. Arulkumaran R. Radhakrishnan Sumathi P. Jayavel J. Kumar

The effect of low energy proton irradiation induced damage on the near interface of the Pd/n-GaAs Schottky Barrier Diodes (SBDs) has been studied using I-V and C-V characteristics. The reverse leakage current increases as a function of irradiation fluences. Annealing the irradiated SBDs helps to anneal out the irradiation induced defects. Annealing mechanism of the defects in the irradiated SBDs with different fluences are discussed. Unirradiated SBDs annealed at 673 K depict ohmic behavior, which is attributed to the formation of thin heavily doped GaAs layer at the interface. But for the annealed (673 K) irradiated SBDs, improved device characteristics has been observed when compared with the as irradiated device characteristics. A decrease in the capacitance has been observed in the irradiated and annealed SBDs for the fluences 1×10 14 , 1×10 15 and 1×10 16 p cm -2 . For higher incident particle fluences (1×10 15 and 1×10 16 p cm -2 ) an increase in the capacitance has been observed compared to 1×10 14 p cm -2 fluence.

Reverse leakage current

Deep-level transient spectroscopy

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Assessment of renal complication in Type 2 diabetes mellitus patient in durg district Chhattisgarh

International Journal of Medical and Health Research (2020)

J. Kumar Ashis Kumar Sarkar Manish Chandra Mishra Ruchir Jain

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XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powder

Materials Chemistry and Physics (2002)

M. Senthil Kumar J. Kumar

Wurtzite crystal structure

10.1016/s0254-0584(02)00012-3

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Citations (48)

Spray-pyrolytic-grown ITO/InP junctions: effect of tin doping

Semiconductor Science and Technology (1993)

V. Vasu A. Subrahmanyam J. Kumar P. Ramasamy

The effect of tin concentration on the photovoltaic properties of indium tin oxide (ITO)/p-InP junctions prepared at 340 degrees C by the spray pyrolysis technique has been reported. With increasing tin concentration (up to 25% by weight) in the ITO films, the illuminated output parameters of the junctions, Voc. Jsc and fill factor (FF) (and consequently the efficiency) are affected very little, but appreciable changes are observed in the diode ideality factor (n), reverse saturation current (J0) and spectral response. A maximum efficiency of 10.7% has been achieved under 100 mW cm-2 illumination for junctions (without antireflection coating and top grid contact) having 5% by weight of tin. An attempt has been made to understand the results qualitatively.

Pyrolytic carbon

10.1088/0268-1242/8/3/024

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Citations (8)

Study of residual strains in wafer crystals by means of lattice tilt mapping

Il Nuovo Cimento D (1997)

C. Ferrari D. Korytár J. Kumar

Diffractometer

Lattice (music)

Lattice constant

Burgers vector

Crystal (programming language)

Diffraction topography

10.1007/bf03040969

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Citations (15)

Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (1996)

S. Arulkumaran J. Arokiaraj M. Udhayasankar J. Kumar D. Kanjilal

Crucible (geodemography)

10.1016/0168-583x(96)00309-6

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Citations (5)

Progress in III-nitrides: Process issue and purity perspective

Bulletin of Materials Science (2005)

J. Kumar

10.1007/bf02704249

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Citations (1)

Double doping: A method to decrease dislocation densities in LEC InP crystals

Berenice Anina Dedavid R. Fornari M. Moriglioni J. Kumar S. Anbukumar

The authors report on the growth of low-dislocation density low-carrier concentration p-type InP via codoping with CdTe. Four crystals were grown by the liquid encapsulated Czochralski (LEC) technique. The results of electrical and analytical studies suggest that both cadmium and tellurium undergo some chemical reactions before pulling, so that only a minor fraction of the added impurities is available for doping. The effectiveness of this codoping in terms of dislocation density reduction has been confirmed by the structural investigations carried out on the four crystals with low free carrier concentrations. The role of multiple doping as a strategy for dislocation reduction is discussed.< >

Tellurium

Cadmium telluride photovoltaics

Charge-carrier density

10.1109/iciprm.1993.380612

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Effect of additive on erosion behaviour of slurry pumps material

AIP conference proceedings (2020)

J. Kumar Yatish Kumar Baghel Raghav Srivastava Vivek Kumar Patel

A significant share of problems in coal powered thermal plants is contributed by the wear of slurry pumps and the same has been tackled in the current study with the help of Cetyltrimethyl Ammonium Bromide (CTAB) as additive to the slurry. In present work, an erosion testing is done utilizing a Pot Tester setup for SS316 samples which is a common pump material. A comparative study on erosion behaviour of the as-received material is carried out by using a high concentration slurry (Cw = 60% by weight) with and without additives. The experiments are performed with four different rotational speeds of the samples (300, 400, 500 and 600rpm) while keeping the erodent impact angle as 90°. It is observed that the erosion rate increases with rotational speed for the both the cases (with and without additives). It is found that erosion rate decreases significantly by the use of additives in the slurry. A linear variation of weight loss with time is observed and an increase in wear with increasing rpm is also seen.

Ammonium bromide

10.1063/5.0024349

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Citations (1)