A series of ZnSe/GaAs(001) samples grown with various epilayer thicknesses from 50 to 1800 nm is investigated to study the role of polar misfit dislocations in respect of their nucleation and propagation behavior in the process of layer strain relaxation. Photoluminescence spectroscopy and SEM cathodoluminescence, both applied at low temperatures, are exploited to investigate misfit dislocation configurations and related stress relief in the ZnSe epilayers. Expected effects concerning the asymmetry in the dislocation misfit arrangements and optical anisotropy could be proved and analyzed in the framework of a modified Dodson-Tsao-Model.
