ЕЕ

Е. Е. Вдовин

Institute of Microelectronics Technology and High Purity Materials

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Yu. N. Khanin

Institute of Microelectronics Technology and High Purity Materials

L. Eaves

University of Nottingham

M. Henini

University of Nottingham

Yu. V. Dubrovskiĭ

Institute of Microelectronics Technology and High Purity Materials

Kostya S. Novoselov

National University of Singapore

A. Patanè

University of Nottingham

G. Hill

The Royal Melbourne Hospital

СВ

С. В. Морозов

Institute for Physics of Microstructures

O. Makarovsky

University of Nottingham

P. C. Main

King's College London

Cooperative Institutions

Russian Academy of Sciences

University of Nottingham

University of Manchester

Institute of Microelectronics Technology and High Purity Materials

Henry Royce Institute

Centre National de la Recherche Scientifique

Institute of Solid State Physics

National University of Singapore

Moscow Institute of Physics and Technology

University of Sheffield

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Manifestation of Layer-by-Layer Localization of van Hove Singularities in Tunneling between Bilayer Graphene Sheets

JETP Letters (2024)

Е. Е. Вдовин Yu. N. Khanin С. В. Морозов M. A. Kashchenko A. A. Sokolik

Bilayer graphene

Van Hove singularity

10.1134/s0021364024604019

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Citations (0)

MAGNETIC FIELD DEPENDENCE OF MANY-BODY ENHANCED ELECTRON TUNNELLING THROUGH A QUANTUM DOT

International Journal of Modern Physics B (2009)

I. A. Larkin Е. Е. Вдовин Yu. N. Khanin M. Henini

We consider many-body enhanced electron tunnelling through an InAs quantum dot in magnetic field applied perpendicular to the tunneling direction. Critical exponent of Fermi edge singularity in tunneling current is calculated as a function of magnetic field. We use lowest Landau level approximation for electrons in emitter and perform scattering matrix calculation in Born approximation. Results are compared with recent experiments.

Landau quantization

10.1142/s0217979209062657

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Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures

Semiconductors (2019)

Yu. N. Khanin Е. Е. Вдовин А. Мищенко Kostya S. Novoselov

10.1134/s1063782619080104

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Suppression of the equilibrium tunneling current between slightly disordered two-dimensional electron systems with different electron concentrations in a high magnetic field

JETP Letters (1999)

Yu. V. Dubrovskiĭ Е. Е. Вдовин Yu. N. Khanin В. Г. Попов D. K. Maude

Solid-state physics

10.1134/1.568014

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Citations (3)

Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers

JETP Letters (2023)

Yu. N. Khanin Е. Е. Вдовин С. В. Морозов Kostya S. Novoselov

The strong suppression of equilibrium magnetic tunneling in a graphene/hBN/graphene heterostructure caused by the Coulomb correlation gap in the tunneling density of states has been found. Comparison has shown that the suppression of the equilibrium tunneling conductivity $${{G}_{0}}$$ in a high magnetic field with a decrease in the temperature and the dependence of the observed gap width Δ on the filling factor of Landau levels ν are qualitatively similar to the respective results of similar experiments in GaAs heterostructures and has confirmed our hypothesis concerning the nature of the effect. However, the determined gap width Δ is much larger than those measured in all previous works in semiconductor heterostructures probably because the cyclotron energy in graphene is much higher than that in GaAs in the region of low Landau levels.

Landau quantization

Solid-state physics

10.1134/s0021364023602464

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Citations (1)

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

Physical Review B (2014)

Е. Е. Вдовин M. Ashdown A. Patanè L. Eaves R. P. Campion

We report large amplitude quantum oscillations and negative differential conductance in the bias voltage-dependent photocurrent of p-i-n GaAs diodes with an AlAs barrier in the intrinsic ($i$) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (\ensuremath{\sim}2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the $p$- (and $n$-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

Photocurrent

Oscillation (cell signaling)

Rectangular potential barrier

Shubnikov–de Haas effect

10.1103/physrevb.89.205305

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Citations (16)

Magnetic field variation of tunnelling gap between disordered two-dimensional electron systems

Physica E Low-dimensional Systems and Nanostructures (2000)

Yu. N. Khanin Yu. V. Dubrovskiĭ Е. Е. Вдовин D. K. Maude J.C. Portal

Variation (astronomy)

10.1016/s1386-9477(99)00126-5

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Citations (7)

INTRODUCTION TO TWO-DIMENSIONAL MATERIALS

Surface Review and Letters (2021)

Xuanye Leng Siyu Chen Kou Yang Musen Chen Majid Shaker

The application areas of two-dimensional (2D) materials, their heterostructures and composites are rapidly expanding — thanks to their extraordinary mechanical, optical, electronic and thermal properties. The family of 2D materials, which are finding a use in applications, is rapidly growing, and now includes graphene, graphene oxide, hexagonal boron nitride and transition-metal dichalcogenide, as well as the recently obtained chemical derivatives, physically modified hybrids and allotropes. New applications also trigger the development of new and more efficient methods for the synthesis of 2D materials and the formulation of composites. In this paper, we focus on the relation between the structure of the 2D materials and their heterostructures on the one hand and their properties on the other, summarize recent improvements in the synthesis approaches and discuss the perspectives in applications. We highlight existing applications in electronics, optoelectronics, electrocatalysis and energy storage and discuss new potential areas such as functional coatings and biomedical materials and devices.

Hexagonal boron nitride

Characterization

10.1142/s0218625x21400059

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Citations (28)

Bose condensation of excitons in two-layer electronic systems in the absence of magnetic field

Bulletin of the Russian Academy of Sciences Physics (2007)

Yu. N. Khanin Е. Е. Вдовин L. Eaves M. Henini

Phase coherence

10.3103/s1062873807080217

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Citations (1)