W W Liu

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D. Z. Shen

Chinese Academy of Sciences

Bo Yao

Beijing Institute of Technology

Rui Deng

First Affiliated Hospital of Jiangxi Medical College

Yongfeng Li

Jilin University

Bo-Ying Li

Ningxia University

Z Z Zhang

Changchun Institute of Optics, Fine Mechanics and Physics

C. X. Shan

Zhengzhou University

J Y Zhang

Chinese Academy of Sciences

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Chinese Academy of Sciences

Changchun Institute of Optics, Fine Mechanics and Physics

Hangzhou Normal University

Jilin University

Shanghai Institute of Optics and Fine Mechanics

Shanghai Institute of Ceramics

Shanghai Institute of Microsystem and Information Technology

Institute of Physics

Technische Universität Berlin

Academia Sinica

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Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

Chinese Journal of Luminescence (2010)

Bo-Ying Li Bo Yao Yongfeng Li Rui Deng Z Z Zhang

ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.

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