M. Henini

University of Nottingham

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L. Eaves

University of Nottingham

343

G. Hill

The Royal Melbourne Hospital

106

P. C. Main

King's College London

A. Patanè

University of Nottingham

P. C. Main

University of Sheffield

O. H. Hughes

University of Nottingham

A. J. Kent

University of Nottingham

Y. Galvão Gobato

Universidade Federal de São Carlos

Peter H. Beton

University of Nottingham

D. K. Maude

Centre National de la Recherche Scientifique

Cooperative Institutions

University of Nottingham

311

Centre National de la Recherche Scientifique

157

University of South Africa

University of Cambridge

University of Sheffield

Russian Academy of Sciences

University of Oxford

National Research Foundation

Laboratoire National des Champs Magnétiques Intenses

Universidade Federal de São Carlos

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Novel index surfaces workshop

III-Vs Review (1995)

M. Henini

10.1016/0961-1290(95)80158-8

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Citations (0)

Transmission-line modelling of the Liesegang phenomenon

Journal of the Chemical Society Faraday Transactions 2 Molecular and Chemical Physics (1987)

Donard de Cogan M. Henini

This paper presents details of the application of the transmission-line matrix (TLM) method to an analysis of the Liesegang phenomenon. The technique does not suffer from some of the mathematical problems which have been encountered with other formulations. The spacing and time relationships are in good agreement with published experimental data.

Line (geometry)

Phenomenon

Matrix (chemical analysis)

10.1039/f29878300837

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Citations (3)

Physics of optoelectronic devices

Microelectronics Journal (1997)

M. Henini

10.1016/s0026-2692(97)87853-6

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Citations (283)

Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures

Solid-State Electronics (1989)

L. Eaves M. L. Leadbeater D.G. Hayes E.S. Alves F. W. Sheard

Bistability

Laser linewidth

Thermalisation

10.1016/0038-1101(89)90197-4

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Citations (66)

Semiconductor lasers: An overview part I

III-Vs Review (1993)

M. Henini

10.1016/0961-1290(93)90183-o

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Citations (1)

Influence of the As overpressure during the molecular beam epitaxy growth of Si-doped (211)A and (311)A GaAs

Applied Physics Letters (1995)

L. Pavesi M. Henini D. Johnston

Si-doped (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) with various growth As pressures have been studied. Hall effect measurements have revealed that the doping changes from p to n type by increasing the As pressure. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that by increasing the As pressure, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process.

Overpressure

10.1063/1.113449

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Citations (48)

Observation of a spin polarization phase transition of the 4/3 fractional quantum Hall state in a high-mobility 2D hole system

Journal of Physics Condensed Matter (1993)

P.J. Rodgers B. L. Gallagher M. Henini G. Hill

We report the observation of a spin polarization phase transition of the 4/3 fractional quantum hall state of a high-mobility 2D hole system in a GaAs-(Ga, Al)As heterostructure. Mobilities in excess of 1000000 cm2 V-1 s-1 are achieved at a density of 0.86 * 1011 cm-2. The depth of the 4/3 minimum is seen to weaken as the carrier density is increased before disappearing completely. Upon further increase in carrier density the 4/3 minimum is re-entrant and proceeds to strengthen. The 8/3 and 7/3 states are observed to show apparently anomalous behaviour.

Composite fermion

10.1088/0953-8984/5/44/004

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Citations (5)

A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS₂monolayer semiconductor

Nanoscale Horizons (2019)

Jorlandio F. Felix Arlon Fernandes da Silva S.W. da Silva Fanyao Qu Bin Qiu

This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS₂) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO₂coated Si substrate.

Tungsten disulfide

10.1039/c9nh00414a

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Citations (35)

Magnetophotoluminescence of negatively charged excitons in narrow quantum wells

Physical review. B, Condensed matter (2001)

T. Vanhoucke M. Hayne M. Henini V. V. Moshchalkov

We present the results of photoluminescence experiments on the negatively charged exciton ${X}^{\ensuremath{-}}$ in $\mathrm{GaAs}/{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ quantum wells (QW) in high magnetic fields $(<~50\mathrm{T}).$ Three different QW widths are used here: 100, 120, and $150\AA{}.$ All optically allowed transitions of ${X}^{\ensuremath{-}}$ are observed, enabling us to experimentally verify its energy-level diagram. All samples behave consistently with this diagram. We have determined the binding energy ${E}_{b}$ of the singlet and triplet state of ${X}^{\ensuremath{-}}$ between 23 and 50 T for the 120 and $150\AA{}\mathrm{QW},$ while only the triplet ${E}_{b}$ is observed for the $100\mathrm{\AA{}}\mathrm{QW}.$ A detailed comparison with recent theoretical calculations shows an agreement for all samples across this entire field range.

10.1103/physrevb.63.125331

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Citations (35)

Nonlinear conductance of quantum point contacts in a magnetic field

Semiconductor Science and Technology (1992)

Alexandre Neves P. C. Main C. J. G. M. Langerak Peter H. Beton L. Eaves

The conductance of geometrically asymmetric quantum point contacts formed in 2D electron gas (2 DEGs) in GaAs/(AlGa)As heterojunctions has been studied as a function of the applied bias and magnetic field. The nonlinear conductance is found to be independent of bias direction in zero magnetic field in agreement with other workers but at higher magnetic fields the I(V) curves are highly asymmetric in terms of both the onset and the type of nonlinearity observed. The curves are described using simple theory. The same experimental arrangement is also used to study nonlinearity in the quantum Hall regime when the device acts as an adjustable, narrow channel. The nonlinearity is qualitatively different to the first case and there are discontinuous changes in the dissipation which the authors identify with scattering between magneto-electric subbands.

Conductance quantum

Landau quantization

10.1088/0268-1242/7/3b/068

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Citations (8)