G. C. Aers

National Research Council Canada

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Co-Authors

Philip J. Poole

National Research Council Canada

Robin L. Williams

National Research Council Canada

Dan Dalacu

National Research Council Canada

J. Lapointe

National Research Council Canada

Sergei Studenikin

National Research Council Canada

Marek Korkusiński

National Research Council Canada

P. Zawadzki

Silesian University of Technology

Z. R. Wasilewski

University of Waterloo

M. W. C. Dharma‐wardana

National Research Council Canada

S. Charbonneau

Centre Intégré Universitaire de Santé et de Services Sociaux du Centre-Sud-de-l'Île-de-Montréal

Cooperative Institutions

National Research Council Canada

144

Institute for Microstructural Sciences

120

National Academies of Sciences, Engineering, and Medicine

102

Western University

University of Ottawa

University of Toronto

McMaster University

University of Waterloo

Centre National de la Recherche Scientifique

Chinese Academy of Sciences

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Calculation of the Response of Field-Effect Transistors to Charged Biological Molecules

IEEE Sensors Journal (2007)

D. Landheer W. R. McKinnon G. C. Aers Weihong Jiang M. Jamal Deen

Robust approximations are presented that allow for the simple calculation of the total charge and potential drop $\psi_{0}$ across the region of electrolyte containing charged biological macromolecules that are attached to the gate area of a field-effect transistor (FET). The attached macromolecules are modeled as an ion-permeable membrane in contact with the insulator surface, exchanging protons with the electrolyte as described by the site-binding model. The approximations are based on a new screening length involving the Donnan potential in the membrane and are validated by comparison to the results obtained by numerical solution of the one-dimensional Poisson–Boltzmann equation in the electrolyte and membrane. For gates covered with amphoteric materials such as SiO $_{2}$, the high surface charge density $\sigma_{0}$ due to proton exchange at values of pH far from the point-of-zero charge is a nonlinear function of $\psi_{0}$ , but $\psi_{0}$ and $\sigma_{0}$ are still linear functions of the semiconductor surface potential between the source and drain. Nonlinear expressions for the amphoteric site charge at the contacts can thus be applied effectively with the new approximations to calculate the current-voltage characteristics of the FETs using the strong inversion and charge-sheet models.

Surface charge

Charge density

10.1109/jsen.2007.901047

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Citations (57)

Quantum-well intermixing for optoelectronic integration using high energy ion implantation

Journal of Applied Physics (1995)

S. Charbonneau Philip J. Poole P. G. Piva G. C. Aers Emil S. Köteles

The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

Photoluminescence excitation

10.1063/1.359948

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Citations (72)

Bohm Trajectories and the Tunneling Time Problem

Springer series in surface sciences (1996)

C.R. Leavens G. C. Aers

10.1007/978-3-642-80118-1_6

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Citations (2)

Depth Profiling of Defects in Low Temperature MBE-Grown Silicon

Materials science forum (1992)

T. E. Jackman G. C. Aers J. P. McCaffrey D.T. Britton P. Willutzki

Profiling (computer programming)

10.4028/www.scientific.net/msf.105-110.301

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Citations (3)

Quantum dot site-selection using in situ prepared nano-templates

Physica E Low-dimensional Systems and Nanostructures (2002)

Robin L. Williams G. C. Aers J. Lefebvre Philip J. Poole Devika B. Chithrani

Template

10.1016/s1386-9477(02)00335-1

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Citations (8)

Coherent exchange and double beam splitter oscillations in a triple quantum dot

Physical Review B (2012)

G. C. Aers Sergei Studenikin G. Granger A. Kam P. Zawadzki

Recent experiments with an electrostatically gated structure demonstrated coherent oscillations, involving all three spins of a linear triple dot system. In a combined experimental and theoretical study, we demonstrate coherent doublet/doublet exchange oscillations, leading to arbitrary rotation on the relevant Bloch sphere, and we reveal an interplay between exchange and hyperfine-driven ``double coherent beam splitter'' oscillations.

Beam splitter

10.1103/physrevb.86.045316

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Citations (16)

Tunable emission from InAs quantum dots on InP nanotemplates

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2002)

J. Lefebvre Philip J. Poole G. C. Aers Devika B. Chithrani Robin L. Williams

Selective area chemical beam epitaxy is used to fabricate submicron [100]-oriented InP ridges with well-defined, defect-free (011) sidefacets and (001) tops. Following the deposition of two monolayers of InAs on such nanotemplates and subsequent capping with InP, photoluminescence spectra show for wider ridges strong emission from a thin InAs quantum well and, as the ridge width is reduced, a gradual appearance of a quantum dot emission at lower energy. The method allows continuous tuning on a given sample in a single growth run of both the quantum dot density and the emission wavelength. The result is a consequence of adatom diffusion from the ridge sidefacets onto the top (001) facet, which increases the amount of InAs beyond the critical thickness for three-dimensional nucleation to occur. Compared with growth on planar InP(001) substrates, InAs self-assembled quantum dots grown on these nanotemplates are more uniform as revealed by a twofold reduction in emission linewidth at 4 K.

Laser linewidth

Chemical beam epitaxy

10.1116/1.1500747

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Citations (18)

Extension to arbitrary barriers of the Büttiker-Landauer characteristic barrier interaction times

Solid State Communications (1987)

C.R. Leavens G. C. Aers

WKB approximation

Rectangular potential barrier

Dwell time

10.1016/0038-1098(87)91057-x

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Citations (78)

Investigation of The Single and Two Hole Lateral Quantum Dot System.

OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2018)

A. S. Sachrajda Alex Bogan Sergei Studenikin Louis Gaudreau Lisa A Tracy

Source

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Citations (0)

InAs/InP quantum dot photonic crystal microcavities

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (2006)

Simon Frédérick Dan Dalacu Philip J. Poole J. Lapointe G. C. Aers

Abstract We examine the optical mode structure of two‐dimensional, photonic crystal microcavities based on triple missing hole defects in hexagonal symmetry, etched air‐hole, suspended InP membranes. Polarisation dependent photoluminescence from InAs/InP quantum dots embedded within the cavities is used to explore mode energies and quality factors, Q , as a function of cavity design parameters. Optimised Q values are in excess of 7,500 for the modified y‐dipole mode. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Crystal (programming language)

10.1002/pssc.200671564

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Citations (1)