Junhee Lee

Tokyo Medical and Dental University

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Manijeh Razeghi

Northwestern University

J. B. Ketterson

Northwestern University

J. H. Song

Chungnam National University

Yaxin Cui

Northwestern University

Lakshay Gautam

Northwestern University

Sina Abedini Dereshgi

Northwestern University

Takeshi Yoshida

Tokyo Medical and Dental University

Hiroshi Takase

Tokyo Medical and Dental University

Junko Hori

Tokyo Medical and Dental University

Yusuke Sugahara

Tokyo Institute of Technology

Cooperative Institutions

Northwestern University

Tokyo Medical and Dental University

The University of Tokyo

Quantum Devices (United States)

Sapienza University of Rome

Bilkent University

Japan Society for the Promotion of Science

Chinese Academy of Sciences

University of Chinese Academy of Sciences

National Interuniversity Consortium for the Physical Sciences of Matter

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Magnetic and electrical-transport property variations of epitaxially grown MnAs thin films

Journal of Applied Physics (2005)

J. H. Song Junhee Lee Yinan Cui J. B. Ketterson

We have studied the magnetic and electrical-transport property variations of epitaxial MnAs thin films grown on Si(001) and GaAs(001) substrates by molecular beam epitaxy as a function of the growth temperature and film thickness. All samples show a ferromagnetic behavior with the exception of MnAs∕Si(001) deposited at low growth temperatures. Interestingly, the electrical-transport properties change from metallic to semiconducting on decreasing the total thickness from 300to20nm for MnAs∕GaAs(001) samples. These results indicate a radical change of the electronic structure of the MnAs layer.

10.1063/1.1853871

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Citations (1)

Electrical-transport, magneto-transport and magnetic anisotropy of epitaxially grown MnAs/GaAs hybrid multilayers

Journal of Magnetism and Magnetic Materials (2004)

J. H. Song Junhee Lee Yaxin Cui J. B. Ketterson Sunglae Cho

Magneto

10.1016/j.jmmm.2004.09.033

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Novel Sb-based materials for uncooled infrared photodetector applications

Journal of Crystal Growth (2000)

Junhee Lee Manijeh Razeghi

Specific detectivity

Johnson–Nyquist noise

10.1016/s0022-0248(00)00738-7

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Citations (17)

Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy

IEEE Journal of Quantum Electronics (2023)

Lakshay Gautam Junhee Lee Michael Richards Manijeh Razeghi

We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of

$320\times 256$

focal plane array.

10.1109/jqe.2023.3325254

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Retromode Infrared Scanning Laser Ophthalmoscopy in Vogt-Koyanagi-Harada Disease

Graefe s Archive for Clinical and Experimental Ophthalmology (2024)

Shintaro Yasuda Takeshi Yoshida Yudai Suzuki Yusuke Sugahara Junhee Lee

Fundus Photography

Vogt–Koyanagi–Harada disease

Fundus (uterus)

Indocyanine green angiography

Scanning laser ophthalmoscopy

10.1007/s00417-024-06693-6

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Magneto-transport anisotropy in epitaxially grown hybrid MnAs/GaAs multilayer

Journal of Applied Physics (2015)

J. H. Song Yaxin Cui Junhee Lee J. B. Ketterson

Using molecular-beam epitaxy, we grew a MnAs/GaAs multilayer on a GaAs(100) substrate and compared its magneto-transport characteristics to those of a single-layer MnAs thin film. The crystal orientation of the MnAs layers in both samples was type-B. M–H measurements revealed two-fold symmetric magnetic anisotropy on the surface with the easy and hard direction of magnetization. When the current flowed along the hard direction, the MnAs/GaAs multilayer exhibited negative magnetoresistance below Curie temperature; when the current flowed along the easy direction, it turned positive. We suggest that this peculiar anisotropic magneto-transport behavior in the multilayer originated from two-dimensional carrier confinement and spin-orbit coupling.

Magneto

10.1063/1.4913288

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High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Applied Physics Letters (2023)

Junhee Lee Lakshay Gautam Manijeh Razeghi

We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

Electron Mobility

Wide-bandgap semiconductor

10.1063/5.0170383

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MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics

APL Materials (2024)

Sina Abedini Dereshgi Junhee Lee Daniele Ceneda Maria Cristina Larciprete Marco Centini

The phonon modes of materials contain critical information on the quality of the crystals. Phonon modes also offer a wide range of polarization-dependent resonances in infrared that can be tailored to applications that require large dielectric function contrast in different crystal directions. Here, we investigate the far-field characteristics of MOCVD-grown Ga2O3 thin films. With a combination of cross-polarization FTIR and AFM characterization techniques, we propose an easy and non-invasive route to distinguish κ and β phases of Ga2O3 and study the quality of these crystals. Using numerical methods and cross-polarization spectroscopy, the depolarization characteristics of β-Ga2O3 are examined and depolarization strength values as high as 0.495 and 0.76 are measured, respectively, for 400 and 800 nm-thick β-Ga2O3. The strong birefringence near optical phonon modes of an 800 nm β-Ga2O3 on a sapphire substrate is used to obtain several polarization states for the reflected light in the second atmospheric window 8–14 µm. We anticipate that our findings open a new path for material characterization and wave plate design for the mid-IR range and offer novel possibilities for the future of IR on-chip photonics, thanks to the compatibility of β-Ga2O3 with standard nanofabrication technology.

10.1063/5.0177705

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