Paolo Crovetti

Polytechnic University of Turin

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Franco Fiori

Polytechnic University of Turin

Francesco Musolino

Polytechnic University of Turin

Orazio Aiello

University of Genoa

Pedro Toledo

Polytechnic University of Turin

Massimo Alioto

National University of Singapore

Roberto Rubino

Research and Environmental Devices (Italy)

Sérgio Bampi

Universidade Federal do Rio Grande do Sul

Hamilton Klimach

Universidade Federal do Rio Grande do Sul

Yong Chen

Tsinghua University

Waseem El Sayed

University of Zielona Góra

Cooperative Institutions

Polytechnic University of Turin

École Polytechnique Fédérale de Lausanne

Centre National de la Recherche Scientifique

National University of Singapore

Kyoto University

University of California, Berkeley

Universidade Federal do Rio Grande do Sul

Princeton University

Nanyang Technological University

National Tsing Hua University

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Susceptibility to EMI of a Battery Management System IC for electric vehicles

Orazio Aiello Paolo Crovetti Franco Fiori

The susceptibility to Electromagnetic Interference (EMI) of Battery Management Systems (BMSs) for Li-ion and LiPo battery packs employed in emerging electric and hybrid electric vehicles is investigated in this paper. To this purpose, a specif c test board is developed to experimentally assess the EMI susceptibility of a BMS front-end integrated circuit by direct power injection (DPI) and radiated susceptibility measurements. Experimental results are discussed highlighting different EMI-induced failure mechanisms observed during the tests.

Electromagnetic Compatibility

10.1109/isemc.2015.7256257

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Citations (29)

Hybrid car regenerative braking system reverse engineering and modelling from track testing analysis

Proceedings (2024)

G. Ponzano Paolo Crovetti Patrick Gioffrè Marco Fainello

Reverse engineering

Regenerative brake

10.1007/978-3-662-70395-3_4

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Citations (0)

Design of an Analog and of a Digital-Based OTA in Flexible Integrated Circuit Technology

2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS) (2022)

Sogand Adibi Roberto Rubino Pedro Toledo Paolo Crovetti

In this paper, an Analog and a Digital-Based Operational Transconductance Amplifier (OTA) in a 800 nm Indium-Gallium-Zinc-Oxide (IGZO) Thin-Film Transistors (TFT) Flexible Integrated Circuits (FlexICs) technology are presented and compared on the basis of post-layout simulations. The analog OTA (A-OTA) and the Digital-Based OTA (DB-OTA) occupy a total area of $42,624\mu \mathrm{m}^{2}$ and $25,207\mu \mathrm{m}^{2}$ , respectively and - based on post-layout Monte Carlo (MC) simulations on 100 samples operated at 3.3V with 50pF capacitive load - they achieve an average gain-bandwidth product (GBW) of 58 kHz and 86 kHz, respectively, with an average power consumption of $90\mu\mathrm{W}$ and $113\mu \mathrm{W}$ . The simulated standard deviation of the input offset voltage is 22.3 mV for the A-OTA and 7.2 mV for the DB-OTA while the input-referred integrated noise over the entire GBW is $8.8\mu \mathrm{V}_{\text{RMS}}$ and $87\mu \mathrm{V}_{\text{RMS}}$ for the A-OTA and DB-OTA respectively.

Transconductance

10.1109/icecs202256217.2022.9970904

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Citations (5)

Fast Simulation of Analog Circuit Blocks Under Nonstationary Operating Conditions

IEEE Transactions on Components Packaging and Manufacturing Technology (2021)

Tommaso Bradde S. Grivet‐Talocia Pedro Toledo Anton V. Proskurnikov Alessandro Zanco

This article proposes a black-box behavioral modeling framework for analog circuit blocks (CBs) operating under small-signal conditions around nonstationary operating points. Such variations may be induced either by changes in the loading conditions or by event-driven updates of the operating point for system performance optimization, e.g., to reduce power consumption. An extension of existing data-driven parameterized reduced-order modeling techniques is proposed, which considers the time-varying bias components of the port signals as nonstationary parameters. These components are extracted at runtime by a low-pass filter and used to instantaneously update the matrices of the reduced-order state-space model realized as a SPICE netlist. Our main result is a formal proof of quadratic stability of such linear parameter varying (LPV) models, enabled by imposing a specific model structure and representing the transfer function in a basis of positive functions whose elements constitute a partition of unity. The proposed quadratic stability conditions are easily enforced through a finite set of small-size linear matrix inequalities (LMIs), used as constraints during model construction. Numerical results on various CBs, including voltage regulators, confirm that our approach not only ensures the model stability but also provides speedup in runtime up to two orders of magnitude with respect to full transistor-level circuits.

Netlist

Operating point

Speedup

10.1109/tcpmt.2021.3099215

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Citations (5)

A 0.3–1.2 V Schottky-Based CMOS ZTC Voltage Reference

IEEE Transactions on Circuits & Systems II Express Briefs (2019)

Pedro Toledo David Cordova Hamilton Klimach Sérgio Bampi Paolo Crovetti

A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard-VT (SVT), Low-VT (LVT), and Zero-VT (ZVT) MOS transistors biased near their ZTC point by a single PTAT current reference. Measurements on 15 circuit samples fabricated in a standard 0.13-μm CMOS process show a worst-case normalized standard deviation (σ/μ) of 3% (SVT), 5.1% (LVT) and 10.8% (ZVT) respectively with a 75% of confidence level. At the nominal supply voltage of 0.45 V, the measured effective temperature coefficients (TCeff) range from 140 to 200 ppm/oC over the full commercial temperature range. At room temperature (25 oC), line sensitivity in the ZVT VR is just 1.3%/100 mV, over the whole supply range. The proposed reference draws around 5 μW and occupies 0.014 mm ² of silicon area.

Temperature coefficient

Atmospheric temperature range

10.1109/tcsii.2019.2932281

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Citations (18)

Electromagnetic Interference and Compatibility

MDPI eBooks (2021)

Paolo Crovetti

Recent progress in the fields of Electrical and Electronic Engineering has created new application scenarios and new Electromagnetic Compatibility (EMC) challenges, along with novel tools and methodologies to address them. This volume, which collects the contributions published in the "Electromagnetic Interference and Compatibility" Special Issue of MDPI Electronics, provides a vivid picture of current research trends and new developments in the rapidly evolving, broad area of EMC, including contributions on EMC issues in digital communications, power electronics, and analog integrated circuits and sensors, along with signal and power integrity and electromagnetic interference (EMI) suppression properties of materials.

Electromagnetic Compatibility

Power integrity

10.3390/books978-3-0365-0501-5

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Citations (7)

Electromagnetic Interference of Power Converter with Random Modulation on the Power Line Communication System

Electronics (2021)

Abduselam Hamid Beshir Lu Wan Flavia Grassi Paolo Crovetti Xiaokang Liu

Random Pulse Width Modulation (RPWM) allows controlling the switching signal of power converters in order to reduce the harmonic peaks by spreading the noise spectrum. Currently, many manufacturers of power converters are deploying this modulation scheme in order to comply with Electromagnetic Compatibility (EMC) test requirements. However, when the converters coexist with Power Line Communication (PLC) systems, such as in Smart Grid (SG) applications, resorting to RPWM needs further investigations since it potentially affects the communication channel by increasing the bit error rate. This possible detrimental effect is investigated in this work, by considering a PLC system for automatic meter reading (AMR) implemented in a SG application. To this end, the model of a complete PLC system is implemented in SIMULINK, and Quadrature Phase Shift Keying (QPSK) modulation is used to model the PLC modems in the communication channel. Results show that, even if the deployment of RPWM techniques may lead to an appreciable reduction/spreading of the peaks in the noise spectrum, it may also lead to an increase of the bit error rate on the PLC system.

Power-line communication

Electromagnetic Compatibility

Modulation (music)

10.3390/electronics10232979

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Citations (7)

Efficient Saturation Control for Fully Differential Integrator in Continuous-Time Sigma-Delta Modulators

Matteo De Ferrari Francesco Stilgenbauer Edoardo Botti Cristiano Meroni Paolo Crovetti

This paper presents an alternative approach to saturation control in an integrator, that occurs in Sigma-Delta modulators (ΣΔMs). This solution simplifies the design process with a 1.2- V power supply and consumes significantly less power than conventional saturation control methods. Additionally, this solution provides a good phase margin, that guarantees the stability, without requiring additional compensation techniques, and it has the added benefit of reducing the gain of the integrator as the system enters saturation, while also maintaining integrator inputs fixed at the proper common-mode voltage. This innovative approach offers a promising solution for efficient and stable saturation control in ΣΔM integrators, preventing distortion in the output signal, with potential applications in a wide range of electronic systems, such as audio systems. The circuit has been designed in a 90-nm CMOS technology.

Delta-sigma modulation

Sigma

Saturation (graph theory)

10.1109/prime61930.2024.10559701

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A 880 nW, 100 kS/s, 13 bit Differential Relaxation-DAC in 180 nm

Roberto Rubino Francesco Musolino Yong Chen Anna Richelli Paolo Crovetti

This paper presents a digital intensive, compact and energy efficient 13-bit, 100-kS/s Differential Relaxation Digital to Analog converter (Diff-ReDAC) in 180 nm CMOS. The DiffReDAC is able to operate in a supply voltage range from 0.45 V to 1 V having power consumption ranging from 420 nW to 2,650 nW. It has an area footprint of only 7,800$\mu \mathrm{m}^{2}$ while achieving, at 0. 6V a maximum INL (DNL) of 1. 07LSB(0.96LSB), 77. 81dB(77.52dB) of SFDR (THD) and 65. 82dB SINAD, resulting in 10. 64ENOB. Its low power dissipation of 880nW results in extremely competitive energy efficiency (area-normalzed energy efficiency) figures of merits FOM (FO$\mathrm{M}_{\mathrm{A}}$) of 172 dB(178dB).

Spurious-free dynamic range

Footprint

10.1109/prime58259.2023.10161768

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Citations (4)

A Critical Assessment of the TEM Cell IC Susceptibility Test Method

International Symposium on Electromagnetic Compatibility (1992)

Franco Fiori Francesco Musolino Paolo Crovetti

10.1109/isemc.2002.10792303

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Citations (0)