Sabar D. Hutagalung

Jazan University

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Zainal Arifin Ahmad

Hospital Universiti Sains Malaysia

Mohd Fadzil Ain

Universiti Sains Malaysia

Arash Dehzangi

Northwestern University

Farhad Larki

Isfahan University of Technology

Elias Saion

Universiti Putra Malaysia

Srimala Sreekantan

Universiti Sains Malaysia

Mohd Nizar Hamidon

Universiti Putra Malaysia

Ahmad Makarimi Abdullah

University of Kuala Lumpur

Julie Juliewatty Mohamed

Universiti Malaysia Kelantan

Mohamadariff Othman

University of Malaya

Cooperative Institutions

Universiti Sains Malaysia

Hospital Universiti Sains Malaysia

Universiti Sains Islam Malaysia

National University of Malaysia

Universiti Putra Malaysia

Universiti Malaysia Perlis

University of Technology Malaysia

Malaysia University of Science and Technology

University of Malaya

Universiti Teknologi MARA

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Pencirian arus-voltan struktur terapit saput tipis logam/timah selenida/logam

Sabar D. Hutagalung Samsudi Sakrani Yusof Wahab

Polihablur saput tipis timah selenida (SnSe) disediakan dengan kaedah penselenidan tertudung-tebat daripada bahan pukal Sn dan Se. Untuk pencirian arus-voltan (I-V) telah disediakan sampel dengan bentuk struktur terapit iaitu Al/SnSe/Al, In/SnSe/Al dan Pb/SnSe/Al pada substrat kaca corning. Pengukuran I-V bagi struktur tersebut dilakukan pada suhu bilik di dalam bilik gelap dengan menggunakan sumber arus terus. Daripada ciri I-V diperolehi bahawa sentuhan ohmik berlaku di antara elektrod aluminium (Al) dan indium (In) dengan SnSe, manakala sentuhan dengan elektrod emas (Au) menghasilkan sentuhan tak ohmik dengan sawar keupayaannya dalam julat 0.33-0.37 eV. Struktur Pb/SnSe/Al pula menunjukkan ciri diod sawar Schottky dengan voltan runtuh -0.8 V dan voltan ambang 0.8 V. Sentuhan rektifikasi diantara elektrod Pb dan SnSe menghasilkan sawar keupayaan dalam julat 0.50-0.71 eV.

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Effect of TMAH etching duration on the formation of silicon nanowire transistor patterned by AFM nanolithography

Sabar D. Hutagalung Connie Lew

Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nanopatterns. A conductive AFM tip was used to grow the silicon oxide nanopatterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nanowire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nanowire transistor structure has been investigated. A completed silicon nanowire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nanowire transistor consists of a silicon nanowire that acts as a channel with source and drain pads. A lateral gate pad with a nanowire head was fabricated very close to the channel in the formation of transistor structures.

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Synthesis and Gas Sensing Properties of SnO<sub>2</sub> Nanostructures by Thermal Evaporation

Advanced materials research (2012)

Wan Normiza Wan Mustapha Sheikh Abdul Rezan Sabar D. Hutagalung Nguyễn Văn Hiếu Khairudin Mohamed

Tin oxide nanostructures (NS) were grown on silicon substrates by thermal evaporation method with three different parameters. These parameters were temperatures (650 °C, 750 °C and 850 °C), nickel catalyst concentrations (0, 5 and 10 milimoles) and tin powder source to substrate distances (2 cm, 4 cm and 6 cm). The parameters were found to affect the size and morphology of the synthesized nanostructures. Formation of nanospheres (NSs), nanoneedles (NNs) and nanowires (NWs) of tin oxide were observed by Scanning Electron Microscope (SEM) at different synthesis conditions. Synthesis temperature was found to have most pronounced effect on the size and morphology of the nanostructures. Catalyst concentration has affected the porosity and growth of the nanostructures. The distance between source and substrate affected the nanostructures predominately on distribution and particle size. Energy dispersion X-ray (EDX) analysis confirms the presence of tin and oxygen in all nanostructures at all synthesis conditions. X-ray diffraction (XRD) proves the formation of tin oxide phase in all samples. Significant formation of tin oxide nanowires was observed at 850 °C. Gas sensing properties of SnO 2 nanowires (NW) toward ethanol (C 2 H 5 OH) gas at 450°C with different volume concentration was measured. It was found SnO 2 NW had good sensing properties for C 2 H 5 OH at 100 ppm compared to measurements made at 25-50 ppm.

Tin oxide

10.4028/www.scientific.net/amr.620.350

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Microwave assisted sintering of CaCu3Ti4O12

Ceramics International (2007)

Sabar D. Hutagalung M. Ikhwan M. Ibrahim Zainal Arifin Ahmad

Pellet

10.1016/j.ceramint.2007.09.074

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Citations (35)

A novel 5.8GHz quasi-lumped element resonator antenna

AEU - International Journal of Electronics and Communications (2013)

Mohd Fadzil Ain Seyi Stephen Olokede Yazeed Qasaymeh Arjuna Marzuki Julie J. Mohammed

Patch antenna

Antenna tuner

Feed line

10.1016/j.aeue.2012.12.008

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Pinch-Off Effect in P-Type Double Gate and Single Gate Junctionless Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Nanolithography

Nano Hybrids (2013)

Farhad Larki Arash Dehzangi Jumiah Hassan Alam Abedini Elias Saion

The spark of aggressive scaling of transistors was started after the Moors law on prediction of device dimensions. Recently, among the several types of transistors, junctionless transistors were considered as one of the promising alternative for new generation of nanotransistors. In this work, we investigate the pinch- off effect in double gate and single gate junctionless lateral gate transistors. The transistors are fabricated on lightly doped (10 15 ) p-type Silicon-on-insulator wafer by using an atomic force microscopy nanolithography technique. The transistors are normally on state devices and working in depletion mode. The behavior of the devices confirms the normal behavior of the junctionless transistors. The pinch- off effect appears at V G +2.0 V and V G +2.5 V for fabricated double gate and single structure, respectively. On state current is in the order of 10 -9 (A) for both structures due to low doping concentration. The single gate and double gate devices exhibit an I on /Io ff of approximately 10 5 and 10 6 , respectively.

10.4028/www.scientific.net/nh.4.33

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Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

Farhad Larki Arash Dehzangi Sawal Hamid Md Ali Azman Jalar Md. Shabiul Islam

The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (I _ON /I _OFF ) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation.

Transconductance

Variation (astronomy)

10.1109/smelec.2014.6920823

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Fabrication of BaTiO3 thin films through ink-jet printing of TiO2 sol and soluble Ba salts

Materials Letters (2007)

Yeoh Cheow Keat Srimala Sreekantan Sabar D. Hutagalung Zainal Arifin Ahmad

Stoichiometry

10.1016/j.matlet.2007.02.046

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Current-Voltage Characteristics of Side-Gated Silicon Nanowire Transistor Fabricated by AFM Lithography

Advanced materials research (2011)

Sabar D. Hutagalung Kam C. Lew

Silicon nanowire transistor (SiNWT) was fabricated by using a silicon nanowire as a channel which directly connected to the source (S) and drain (D). In this work, a side gate (G) formation was used to develop a transistor structure. AFM lithography was performed to create the nanoscale oxide patterns via local anodic oxidation (LAO) mechanism. A conductive AFM tip was used to grow localized oxide layer on the surface of silicon on insulator (SOI) substrate by the application of voltage between tip and substrate. Other parameters that will influence the patterning process such as tip writing speed, relative air humidity, anodization time and substrate orientation were controlled. The patterned structure was etched with tetramethylammonium hydroxide (TMAH) and hydrogen fluoride (HF) acid to remove the uncovered silicon layer and silicon oxide mask patterns, respectively. The surface topography and dimension of the fabricated SiNWT was observed under AFM. Obtained results for the channel thickness, channel length and the distance between the channel and side gate are 32.92 nm, 7.63 µm and 108.07 nm, respectively. Meanwhile, the I-V characteristics of fabricated SiNWT measured at positive gate voltages are similar to p-type FET characteristics.

Tetramethylammonium hydroxide

10.4028/www.scientific.net/amr.277.84

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nanowire transistor by Atomic Force Microscopy Nanolithography

Arash Dehzangi Farhad Larki Jumiah Hassan Sabar D. Hutagalung Elias Saion

In this work, we have investigated the fabrication of Double gate and Single gate Junctionless silicon nanowire transistor using silicon nanowire patterned on lightly doped (10 5 cm -3 ) p-type Silicon on insulator wafer fabricated by Atomic force microscopy nanolithography technique. Local anodic oxidation followed by two wet etching steps, Potassium hydroxide etching for Silicon removal and Hydrofluoric acid etching for oxide removal, were implemented to reach the structures. Writing speed and applied tip voltage were held in 0.6 µm/s and 8 volt respectively for Cr/Pt tip. Scan speed was held in 1.0 µm/s. The etching processes were elaborately performed and optimized

Potassium hydroxide

Hydrofluoric acid

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