Hongen Zhu

National Synchrotron Radiation Laboratory

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

Yuliang Li

Beihang University

Zhanfeng Liu

Chinese Academy of Sciences

Li Song

Binzhou University

Yi Liu

Huazhong University of Science and Technology

Zhe Sun

University of Science and Technology of China

Shengtao Cui

University of Science and Technology of China

Xiwei Qi

Northeastern University

Xiaoyan Zhang

Lanzhou Jiaotong University

Yunbo Wu

National Synchrotron Radiation Laboratory

Guobin Zhang

Tianjin Huanhu Hospital

Cooperative Institutions

University of Science and Technology of China

National Synchrotron Radiation Laboratory

Chinese Academy of Sciences

Hefei National Center for Physical Sciences at Nanoscale

Collaborative Innovation Center of Chemistry for Energy Materials

Northeastern University

Hefei University

National University of Defense Technology

Peking University

University of Chinese Academy of Sciences

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe₂ with Low Substitution of Ti for Zr

Chinese Physics Letters (2022)

Sheng Wang Zia Ur Rehman Zhanfeng Liu Tongrui Li Yuliang Li

Tuning the bandgap in layered transition metal dichalcogenides (TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti x Zr 1 – x Se 2 single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe 2 induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti x Zr 1 – x Se 2 decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4 p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.

Spin–orbit interaction

10.1088/0256-307x/39/7/077102

Cite

Citations (1)

Strong bulk-surface interaction controlled in-plane anisotropy of electronic structure in GaTe

arXiv (Cornell University) (2021)

Lai Kang Sailong Ju Hongen Zhu Bingjie Yang Enrui Zhang

Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors with the in-plane anisotropy often originates directly from the low crystallographic symmetry. However, little has been known about the systems where the size effect dominates the anisotropy of electronic band structures. Here, applying both experiment and theory, we show that the anisotropic energy bands of monoclinic gallium telluride (GaTe) are determined by a strong bulk-surface interaction rather than geometric factors. Bulk electronic states are found to be the major contribution to the highest valence band, whose anisotropy is yet immune to surface doping by potassium atoms. Further analysis indicates the weakened bulk-surface interaction gives rise to an inverse anisotropy of hole effective masses and the strong interlayer coupling induces a direct-indirect-direct band gap transition at transfer from mono- to few-layer GaTe. Our results thus pave the way to future applications of anisotropic layered semiconductors in nanoelectronics and optoelectronics.

Telluride

Source

Cite

Citations (0)

Structure and electrical properties of SrZrO3-modified (K,Na,Li)(Nb,Ta)O3 lead-free piezoelectric ceramics

Journal of Materials Science Materials in Electronics (2017)

Hongen Zhu Xiaoyan Zhang Min Zhang Ying Li Xiwei Qi

Orthorhombic crystal system

Tetragonal crystal system

10.1007/s10854-017-8329-9

Cite

Citations (5)

Experimental Observation of Electronic Structures of Kagome Metal YCr₆Ge₆*

Chinese Physics Letters (2020)

Pengdong Wang Yihao Wang Bo Zhang Yuliang Li Sheng Wang

Using angle-resolved photoemission spectroscopy, we study electronic structures of a Kagome metal YCr 6 Ge 6 . Band dispersions along k z direction are significant, suggesting a remarkable interlayer coupling between neighboring Kagome planes. Comparing ARPES data with first-principles calculations, we find a moderate electron correlation in this material, since band calculations must be compressed in the energy scale to reach an excellent agreement between experimental data and theoretical calculations. Moreover, as indicated by band calculations, there is a flat band in the vicinity of the Fermi level at the Γ – M – K plane in the momentum space, which could be responsible for the unusual transport behavior in YCr 6 Ge 6 .

10.1088/0256-307x/37/8/087102

Cite

Citations (9)

A novel transparent amorphous LaGaO₃–Nb₂O₅ sphere with high refractive indices fabricated by containerless solidification

Materials Research Express (2018)

Ying Li Xiaoyan Zhang Xiwei Qi Min Zhang Yaohang Gu

10.1088/2053-1591/aae919

Cite

Citations (2)

Disentangling the electron-lattice dichotomy of the excitonic insulating phase in Ta2Ni(Se1−xSx)5 with sulfur substitution and potassium deposition

Science China Physics Mechanics and Astronomy (2024)

Tongrui Li Yang Liu Hongen Zhu Haiping Chen Zhanfeng Liu

Substitution (logic)

Lattice (music)

Deposition

10.1007/s11433-024-2480-4

Cite

Citations (0)

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Nano Research (2021)

Mukhtar Lawan Adam Hongen Zhu Zhanfeng Liu Shengtao Cui Pengjun Zhang

Charge Density Wave

Charge density

10.1007/s12274-021-3859-0

Cite

Citations (9)

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Communications Physics (2022)

Lai Kang Sailong Ju Hongen Zhu Hanwen Wang Hongjian Wu

Abstract Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimentally is dominated by a strong bulk-surface interaction rather than geometric factors, surface effect and quantum confinement effect. Furthermore, accompanied by the thickness of GaTe increasing from mono- to few-layers, the strong interlayer coupling of GaTe induces direct-indirect-direct band gap transition and the in-plane anisotropy of hole effective mass is reversed. Our results shed light on the physical origins of in-plane anisotropy of electronic structure in GaTe, providing guidance to further improving the performance of electronic and optoelectronic devices based on the layered anisotropic semiconductors.

10.1038/s42005-022-00923-1

Cite

Citations (15)

Interfacial Charge-transfer Excitonic Insulator in a Two-dimensional Organic-inorganic Superlattice

arXiv (Cornell University) (2022)

Yang Liu Hongen Zhu Haifeng Lv Yuqiao Guo Zhao Ying-cheng

Excitonic insulators are long-sought-after quantum materials predicted to spontaneously open a gap by the Bose condensation of bound electron-hole pairs, namely, excitons, in their ground state. Since the theoretical conjecture, extensive efforts have been devoted to pursuing excitonic insulator platforms for exploring macroscopic quantum phenomena in real materials. Reliable evidences of excitonic character have been obtained in layered chalcogenides as promising candidates. However, owing to the interference of intrinsic lattice instabilities, it is still debatable whether those features, such as charge density wave and gap opening, are primarily driven by the excitonic effect or by the lattice transition. Herein, we develop a novel charge-transfer excitonic insulator in organic-inorganic superlattice interfaces, which serves as an ideal platform to decouple the excitonic effect from the lattice effect. In this system, we observe the narrow gap opening and the formation of a charge density wave without periodic lattice distortion, providing visualized evidence of exciton condensation occurring in thermal equilibrium. Our findings identify spontaneous interfacial charge transfer as a new strategy for developing novel excitonic insulators and investigating their correlated many-body physics.

Lattice (music)

10.48550/arxiv.2207.08616

Cite

Citations (0)

Persistence of charge density wave against variation of band structures in VxTi1−xSe2(x = 0−0.1)

Nano Research (2023)

Zhanfeng Liu Tongrui Li Wen Zhu Hongwei Shou Mukhtar Lawan Adam

Charge Density Wave

Lattice (music)

10.1007/s12274-023-5936-z

Cite

Citations (0)