W. Ulrici

Paul Drude Institute for Solid State Electronics

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B. Clerjaud

Sorbonne Université

J. Kreissl

Innovations for High Performance Microelectronics

K.‐J. Friedland

Paul Drude Institute for Solid State Electronics

G. Guillot

Institut national de recherche en informatique et en automatique

D. Côté

University of Ottawa

P. Roura

University of Girona

W. Gehlhoff

Technische Universität Berlin

D. P. Halliday

Durham University

G. Brémond

Institut des Nanotechnologies de Lyon

J. Herfort

Forschungsverbund Berlin

Cooperative Institutions

Centre National de la Recherche Scientifique

University of Nottingham

Leibniz Institute for Crystal Growth

Technische Universität Berlin

Forschungsverbund Berlin

Sorbonne Université

Université Clermont Auvergne

Paul Drude Institute for Solid State Electronics

Institut National des Sciences Appliquées de Lyon

Humboldt-Universität zu Berlin

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Photoinduced Optical Absorption of Cr ⁴⁺in Semi-Insulating GaAs:Cr

De Gruyter eBooks (1985)

W. Ulrici

10.1515/9783112495384-033

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Excitonic fine structure in the charge-transfer spectra of GaP:Fe

Physical review. B, Condensed matter (1991)

Thomas Wolf D. Bimberg W. Ulrici

Calorimetric-absorption spectroscopy at $^{3}\mathrm{He}$ temperatures reveals fine structure in the absorption spectra of Fe-doped GaP. A series of sharp lines is observed near 0.83 eV at the onset of the ${\mathrm{Fe}}^{3+}$\ensuremath{\rightarrow}${\mathrm{Fe}}^{2+}$ charge-transfer transition resembling a fine structure previously observed in the spectra of Fe-doped InP samples. In both cases, absorption lines are related to the formation of bound excitonic states in the ${\mathrm{Fe}}^{3+}$\ensuremath{\rightarrow}${\mathrm{Fe}}^{2+}$ charge-transfer transition. The present data indicate that the formation of such bound electron-hole states in the charge-transfer spectra of deep-level impurities is a common phenomenon in III-V semiconductors.

10.1103/physrevb.43.10004

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Citations (12)

Phonon Scattering from V and Ni Centres in GaP and InP

Materials science forum (1989)

N Butler L. J. Challis M. Sahraoui-Tahar B. Salce W. Ulrici

Phonon scattering

10.4028/www.scientific.net/msf.38-41.905

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Citations (2)

Identification of the titanium-related levels in GaP

Applied Physics Letters (1987)

P. Roura G. Brémond A. Nouailhat G. Guillot W. Ulrici

Deep level transient spectroscopy, deep level optical spectroscopy, and optical absorption experiments were carried out in n- and p-type Ti-doped GaP crystals grown by the liquid encapsulated Czochralski technique. The single acceptor level of substitutional titanium Ti3+/Ti2+ was identified by deep level transient spectroscopy at an energy of 0.50±0.02 eV from the conduction band. The Ti2+ intracenter transitions were detected by deep level optical spectroscopy and optical absorption about 0.63 and 1.03 eV. The Ti4+/Ti3+ donor level was found at about 1±0.2 eV from the top of the valence band. The position of these two levels is found in complete agreement with the position of titanium-related levels in GaAs and in InP.

Deep-level transient spectroscopy

Acceptor

10.1063/1.98547

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Citations (19)

Local-Vibrational-Mode Absorption of Two O-H Centres in GaP

physica status solidi (b) (1998)

W. Ulrici M. Czupalla M. Seifert

In LEC-grown GaP, two vibrational lines at 3250.9 cm−1 and 3106.0 cm−1 are measured and assigned to the stretching modes of two different O–H centres. In GaP containing both hydrogen and deuterium, two additional lines appear, both shifted to lower energies by the same factor r = 1.346. This result shows that both O–H centres contain only one hydrogen atom. The O–D line at 2415 cm−1 is split into two lines. This splitting possibly indicates a further example for resonant interaction of local modes with extended ones. The comparison with GaAs suggests the assignment of two lines to the analogous O–H centres in GaAs.

Line (geometry)

10.1002/(sici)1521-3951(199812)210:2<551::aid-pssb551>3.0.co;2-x

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Citations (9)

Zur Beschreibung relativistischer Teilchen höheren Spins im elektromagnetischen Feld / The Description of Relativistic Particles with Arbitrary Spin in the Electromagnetic Field,

Zeitschrift für Naturforschung A (1972)

W. Ulrici

Abstract Starting with the equations of the center-of-mass motion and spin motion of a particle in a homogeneous electromagnetic field, we derive the Hamiltonian and the wave equation of a relativistic particle with arbitrary spin and arbitrary magnetic moment in this field. We change from the canonical representation to spinor representations with convenient transformation properties, and we find a form of the wave equation which, for the special case of spin 1/2, coincides with the Dirac equation (in the form first given by Feynman). The problems and limitations of this derivation are extensively discussed.

Hamiltonian (control theory)

Relativistic wave equations

Two-body Dirac equations

10.1515/zna-1972-0221

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Citations (1)

Nitrogen-Hydrogen Complexes in GaP and GaAs

Materials science forum (1993)

W.S. Hahn B. Clerjaud D. Côté F. Gendron C. Porte

10.4028/www.scientific.net/msf.143-147.277

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Citations (7)

Optical absorption and electron paramagnetic resonance of in GaP

Journal of Physics Condensed Matter (1998)

W. Ulrici K.‐J. Friedland J. Kreissl A Erramli N Tebbal

The results of optical absorption, electrical conductivity, and electron paramagnetic resonance (EPR) experiments on different p-type GaP:V:Zn samples are reported. The transition of gives rise to a broad triple-peaked absorption band and a zero-phonon line (ZPL) at . These features are explained as due to a strong Jahn-Teller coupling of the state. The reduced spin-orbit splitting is smaller than the strain-broadened line-width of the ZPL. The EPR spectrum of , which is angular dependent at T < 4 K, is analysed (g = 1.960, ). Its intensity shows dependence on microwave power characteristics for an impurity with an ground state. The photo-induced recharging is monitored by optical absorption as well as EPR and requires the recharging of anti-site defects.

10.1088/0953-8984/10/34/015

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Citations (3)

Optical Studies of Vanadium in Gallium Phosphide

physica status solidi (b) (1987)

W. Ulrici K.‐J. Friedland L. Eaves D. P. Halliday

Abstract The results of optical absorption, luminescence, luminescence excitation, and temperature‐dependent Hall‐effect measurements on semi‐insulating n‐type GaP:V and n‐conducting GaP:V are reported. The V Ga 2+ /V Ga 3+ acceptor level is found at E c − 0.58 eV. Absorptions due to photoionization transitions from and into this level can be identified. The absorption bands due to the transitions 3 A 2 → 3 T 1 (F) and → 3 T 1 (P) of V Ga 3+ are measured, both absorptions include three zerophonon lines as well as phonon replica. At low temperatures the photoinduced rechargings V Ga 3+ ↔ V Ga 2+ are investigated and interpreted in terms of the three charge states of V Ga and the excitation of electrons from the P Ga 4+ P 4 anti‐site centre.

Gallium phosphide

10.1002/pssb.2221410118

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Citations (22)

Interplay between Jahn–Teller coupling and axial crystal fields: GaP:(Cr, S)

Physica B Condensed Matter (1999)

Enno Baars A. Dörnen W. Ulrici

Jahn–Teller effect

Crystal (programming language)

10.1016/s0921-4526(99)00512-8

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