Rajiv O. Dusane

Indian Institute of Technology Bombay

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Alka Kumbhar

Indian Institute of Technology Bombay

Ankur Soam

Siksha O Anusandhan University

V. G. Bhide

Savitribai Phule Pune University

Mohit Agarwal

NIMS University

Samadhan B. Patil

University of York

V. Ramgopal Rao

Birla Institute of Technology and Science, Pilani

Bibhu P. Swain

National Institute of Technology Manipur

S. V. Ghaisas

Savitribai Phule Pune University

Nilesh Wadibhasme

Indian Institute of Technology Bombay

D.S. Patil

Indian Institute of Technology Bombay

Cooperative Institutions

Indian Institute of Technology Bombay

Savitribai Phule Pune University

Bhabha Atomic Research Centre

University of Mumbai

National Chemical Laboratory

Indian Institute of Technology Indore

Homi Bhabha National Institute

University of Cambridge

University of Oxford

University of Kaiserslautern

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Isotropic etching of polycrystalline silicon wafer by acidic solution

Mohit Agarwal Uday Singh Rajiv O. Dusane

In photovoltaic technology, texturing of base wafer has great importance since it reduces the reflectance of incident light that leads to improvement in the conversion efficiency. Due to different orientations present in polycrystalline silicon wafer an isotropic etching and the texturing without grain boundary delineation is great challenge. In this study, an attempt has been made to get isotropic etching by acidic solution. The volume ratios of HF/HNO 3 / CH 3 COOH have been chosen in such a way that it fell in lower part of iso-etch curve where the solution is HNO3 rich. The presence of high concentration of HNO 3 leads to the rapid oxidation of silicon surface and hence makes the etching rate limited through the diffusion of HF into the SiO 2 . This study shows the isotropic etching of poly-Si wafer which is confirmed by scanning electron microscopy. Moreover, the reflectance measurements show that the average reflectance reduces from 20.5 to 8.5 % over 350 to 800 nm range.

Polycrystalline silicon

Isotropic etching

10.1109/icanmeet.2013.6609391

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Effect of local structural order on the doping in hydrogenated amorphous silicon (a - Si : H)

Journal of Non-Crystalline Solids (1991)

Rajiv O. Dusane Suvarna R. Dusane V. G. Bhide S. T. Kshirsagar

10.1016/s0022-3093(05)80070-5

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Crystalline core/amorphous shell structured silicon nanowires offer size and structure dependent reversible Na-storage

Journal of Materials Chemistry A (2018)

Manoj K. Jangid Aniruddha S. Lakhnot Aditya Vemulapally Farjana J. Sonia Somika Sinha

Crystalline core/amorphous shell structured silicon nanowires show the feasibility of reversible Na-storage, as influenced by the dimensional scale and structure.

Silicon nanowires

10.1039/c7ta10249f

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Citations (38)

Aluminum-induced in situ crystallization of HWCVD a-Si:H films

Thin Solid Films (2007)

Sneha Gupta Hitesh Chelawat Alka Kumbhar Subhra Adhikari Rajiv O. Dusane

Deposition

10.1016/j.tsf.2007.06.202

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Citations (6)

Dislocation core structures in (0001) InGaN

Journal of Applied Physics (2016)

S. L. Rhode Matthew K. Horton S.‐L. Sahonta M. J. Kappers Sarah J. Haigh

Threading dislocation core structures in c-plane GaN and InxGa1−xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1−xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1−xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1−xN, consistent with predictions from atomistic Monte Carlo simulations.

10.1063/1.4942847

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Citations (18)

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2016)

Onkar Shinde Adinath M. Funde Sandesh Jadkar Rajiv O. Dusane Neelkanth G. Dhere

Oleylamine is used as a passivating layer instead of commercial high temperature SiN_x. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Oleylamine

Passivation

Polycrystalline silicon

Carrier lifetime

10.1117/12.2237414

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Citations (1)

Maintaining Cu metal integrity on low-k IMDs with a nanometer thick a-SiC:H film obtained by HWCVD

Thin Solid Films (2007)

Sunil Kumar Singh Anupa A. Kumbhar Rajiv O. Dusane

Electromigration

Hydrogen silsesquioxane

Nanometre

Diffusion barrier

Low-k dielectric

Chemical Mechanical Planarization

Amorphous carbon

10.1016/j.tsf.2007.06.091

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Citations (2)

Gas Phase Chemistry Study During Deposition of a-Si:H and μc-Si:H Films by HWCVD using Quadrupole Mass Spectrometry

MRS Proceedings (2002)

Samadhan B. Patil Alka Kumbhar Rajiv O. Dusane

Microcrystalline

Deposition

Dilution

Quadrupole mass analyzer

10.1557/proc-715-a23.5

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Citations (0)

Microscopic properties of H2 diluted HWCVD deposited a-SiC:H film

Microelectronic Engineering (2005)

Bibhu P. Swain Rajiv O. Dusane

Microelectronics

Low-k dielectric

Amorphous carbon

High-κ dielectric

Carbon fibers

Leakage (economics)

10.1016/j.mee.2005.10.024

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Citations (9)

Ethanol and Hydrogen Gas-Sensing Properties of CuO–CuFe₂O₄ Nanostructured Thin Films

IEEE Sensors Journal (2018)

Saptarshi De N. Venkataramani Shiva Prasad Rajiv O. Dusane Lionel Presmanes

Nanocrystalline CuO-CuFe2O4 composite thin films were developed from CuFeO2 ceramic target using a radio frequency sputtering method followed by a thermal oxidation process. This fabrication process helps to develop porous sensing layers which are highly desirable for solid state resistive gas sensors. Their sensing properties towards ethanol and hydrogen gas in dry air were examined at the operating temperatures ranging from 250 deg C to 500 deg C. The electrical transients during adsorption and desorption of the test gases were fitted with the Langmuir single site gas adsorption model. A composite thin film with a total thickness of 25 nm showed highest response (79%) towards hydrogen (500 ppm) at the operating temperature of 400 deg C. The shortest response time (tres) was found to be ~60 and ~90 seconds for hydrogen and ethanol respectively. The dependence of the response of the sensor on gas concentration (10-500 ppm) was also studied.

10.1109/jsen.2018.2849330

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Citations (21)