Wenbo Luo

National Engineering Research Center of Electromagnetic Radiation Control Materials

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Yao Shuai

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chuangui Wu

National Engineering Research Center of Electromagnetic Radiation Control Materials

Wanli Zhang

National Engineering Research Center of Electromagnetic Radiation Control Materials

Xinqiang Pan

National Engineering Research Center of Electromagnetic Radiation Control Materials

Huizhong Zeng

National Engineering Research Center of Electromagnetic Radiation Control Materials

Shitian Huang

University of Electronic Science and Technology of China

Heidemarie Schmidt

Friedrich Schiller University Jena

Yanrong Li

University of Electronic Science and Technology of China

Jun Zhu

Institute of Materials Research and Engineering

Dailei Zhu

University of Electronic Science and Technology of China

Cooperative Institutions

University of Electronic Science and Technology of China

124

National Engineering Research Center of Electromagnetic Radiation Control Materials

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Xi'an Jiaotong University

Shanghai Jiao Tong University

State Key Laboratory of Electronic Thin Films and Integrated Devices

Peking University

Nanjing University of Aeronautics and Astronautics

Wuhan University

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High-tenacity in-situ Ti/Zr-based bulk metallic glasses composites fabricated by industrial high-pressure die casting

Journal of Material Science and Technology (2023)

Yang Li Wenbo Luo Ying Jin Zhiyong Xue Guiqing Wang

Volume fraction

Ductility (Earth science)

Die casting

Equiaxed crystals

10.1016/j.jmst.2023.06.025

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Citations (3)

Coexistence of memristive and memcapacitive effects in oxide thin films

Japanese Journal of Applied Physics (2018)

Yao Shuai Yun Peng Xinqiang Pan Lei Jin Chuangui Wu

Polycrystalline bismuth ferrite (BiFeO3, BFO) thin films are fabricated by pulsed laser deposition technique on Pt/Ti/SiO2/Si substrates, the current–voltage (I–V) and capacitance–voltage (C–V) measurements show that the Au/BFO/Pt structure simultaneously show resistive and capacitive switchings. By tuning the amplitude of the external voltage, multiple resistance states and capacitance states are obtained. The conduction mechanism of the Au/BFO/Pt is analyzed to explain the switchings, and temperature-dependent I–V and C–V measurements are performed to demonstrate that ferroelectric switching is not the root cause of the resistive and capacitive switching in the examined BFO thin films.

Bismuth ferrite

Pulsed Laser Deposition

Resistive touchscreen

10.7567/jjap.57.121502

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Citations (15)

Monolithic pyroelectric infrared detectors using SiO2 aerogel thin films

Sensors and Actuators A Physical (2015)

Xiangyu Sun Wenbo Luo Jin Meng X. Qing Wenju Fu

Black-body radiation

Infrared detector

10.1016/j.sna.2015.03.006

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Citations (16)

Ar+ ions irradiation induced memristive behavior and neuromorphic computing in monolithic LiNbO3 thin films

Applied Surface Science (2019)

Xinqiang Pan Yao Shuai Chuangui Wu Lu Zhang Hongliang Guo

Neuromorphic engineering

Memristor

10.1016/j.apsusc.2019.04.114

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Citations (19)

The applicable SnO{sub 2} film in SC-SEP cell

Zhao Tan P. Ren Wenbo Luo H. Ti Tien Angelica Ottova

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A Solidly Mounted Resonator Fabricated by LiNbO₃ Single-Crystalline Film on Flexible Polyimide Substrate

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control (2021)

Shitian Huang Wenbo Luo Xiaoyuan Bai Lu Lv Xinqiang Pan

A solidly mounted resonator on flexible polyimide (PI) substrate with high-effective coupling coefficient ( K _t ² ) of 14.06% is reported in this article. This high K _t ² is resulting from the LiNbO ₃ (LN) single-crystalline film and [SiO ₂ /Mo] ³ Bragg reflector. The quality of LN film fabricated by the crystal-ion-slicing (CIS) technique using benzocyclobutene (BCB) bonding layer was close to the bulk crystalline LN. The interfaces of the Al/LN/Al/[SiO ₂ /Mo] ³ Bragg reflector/BCB/PI multilayer are sharp, and the thickness of each layer is consistent with its design value. The resonant frequency and K _t ² keep stable when it is bent at different radii. These results demonstrate a feasible approach to realizing RF filters on flexible polymer substrates, which is an indispensable device for building integrated and multifunctional wireless flexible electronic systems.

10.1109/tuffc.2021.3066589

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Citations (17)

Influence of Hf content on structure and electric properties of PHT thin films with self-buffered layer by PLD

Vacuum (2016)

Junfeng Li Jun Zhu Zhipeng Wu Wenbo Luo

Pulsed Laser Deposition

10.1016/j.vacuum.2016.09.023

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Citations (2)

Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

Applied Physics Letters (2007)

Xianhua Wei Yanrong Li Jun Zhu Wei Huang Y. Zhang

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)-, (011)-, and (111)-orientated SrTiO3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO3(001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110)‖SrTiO3(001) and ZnO[−111]‖SrTiO3⟨100⟩. For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110]‖SrTiO3[110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO3(111) was better than that of ZnO on SrTiO3(011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films.

Pulsed Laser Deposition

10.1063/1.2719026

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Citations (66)

Compliance-current-modulated resistive switching with multi-level resistance states in single-crystalline LiNbO3 thin film

Solid State Ionics (2019)

Xinqiang Pan Yao Shuai Chuangui Wu Wenbo Luo Xiangyu Sun

Resistive touchscreen

10.1016/j.ssi.2019.01.026

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Citations (5)

Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002)

Journal of Applied Physics (2013)

Wenbo Luo Jim J. Zhu Chun‐Guey Wu Yao Shuai W. L. Zhang

SrTiO3 (STO) films have been grown on TiO2-buffered GaN(0002) substrates. The deposition process was in situ monitored by reflective high energy electron diffraction (RHEED). The deposition rate and in-plane lattice parameter of TiO2 were calculated from the oscillation curve and RHEED patterns, respectively. It was found that the TiO2 lattice parameter changed as the thickness increased, which indicated a strain relaxation process of TiO2 buffer layers during the deposition. We show that the thickness of TiO2 can significantly influence the STO growth mode, surface morphology, and crystalline quality. As the TiO2 thickness increased, the STO growth mode is changed from 3D island to 2D growth mode and finally to SK mode as revealed by RHEED. The growth mode evolution shows close relation with the surface morphology and crystalline quality of STO. STO films deposited on 2 nm thick TiO2 film show 2D growth mode and have smoothest surface and smallest full width at half maximum of the STO rocking curve. Our investigation hints towards to a general approach to optimize the crystalline quality of STO, which can be optimized by adjusting the strain state of TiO2 buffer layer.

Lattice constant

Deposition

10.1063/1.4801804

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Citations (5)