Tunnel FET (TFET) is recognized to be one of the most promising candidates for ultra-low power applications due to its ultra-low off current and high compatibility with CMOS process. However, different from the typical features of MOSFET, some electrical characteristics of TFETs caused by asymmetric device structure and special conduction mechanism may make conventional topologies of circuits no longer applicable. In this paper, it is found that the TFETs stacking will result in severe current degradation behavior, which makes traditional topologies of logic gates may be not applicable. To solve this problem, a set of novel hybrid TFET-MOSFET topologies for standard logic cells are proposed. The proposed designs achieve more than 2 times lower hardware cost and intrinsic delay, and realize up to 4 times lower area-power-delay product (APDP) than that of conventional TFET-based logic circuits. Moreover, the proposed topologies can achieve almost 2 orders of magnitude lower power and up to 34 times lower APDP than that of conventional MOSFET-based logic circuits. The proposed standard logic cells show great superiority for power-constraint applications.
Abstract Sulfide all‐solid‐state batteries (ASSBs) have been widely acknowledged as next‐generation energy‐storage devices due to their improved safety performance and potentially high energy density. Among the various fabrication methods of sulfide ASSBs, solvent‐free dry‐film processes have unique advantages including reduced costs, suppressed film delamination, thick electrodes, and high compatibility with sulfide solid electrolytes (SEs). However, the currently dominating binder for dry‐film process polytetrafluoroethylene suffers from poor voltage stability and low viscosity, which leads to low Coulombic efficiency and poor cycling stability of sulfide ASSBs. Herein, a specially‐designed treatment is developed to obtain a new type of dry binder, styrene‐butadiene rubber (SBR), exploiting paraxylene and a NaCl substrate to dissolve and re‐precipitate SBR for controlling its stacking state, micro‐structure/morphology, density, and dispersion performance. The SE membrane prepared using this processed SBR exhibits ultra‐high ionic conductivity (2.34 mS cm ‐1 ), contributing to excellent cycle stability of the corresponding sulfide ASSB (>84% capacity retention after 600 cycles at 0.3C).
This paper briefly introduced the overall environment protection and resources saving status in the field of power industry during the 10th Five-year Plan,analyzed the existing main problems.Based on the forecast of electric power development during the 11th Five-year Plan as well as the requirements of resource-saving and environment friendly society construction,this paper also discussed the main tasks during this period and proposed the basic idea,principle,goal of the plan,and the policies,regulations and management measures as well.This includes the following aspects: adjusting the power sources structure and accelerating technical upgrading;compacting the foundation and enhancing scientific decision;promoting the technical innovation and pollution control;carrying out economic policies and employing market mechanism;issuing regulations and standards as well as developing cycling economy;strengthening the management in accordance with laws and the self-disciplining inside the industries.
Abstract The issue of E-type fastener clip fracture due to high-frequency vibration has attracted widespread attention, with research focusing on the mechanisms leading to such failures. The rail pad, crucial to the fastener system for elastic vibration damping elastic vibration damping, exhibits significant variations in dynamic performance depending on the material and structure. Currently, there is a lack of studies on how the dynamic performance of the rail pad affects E-type fastener clip vibrations and fractures. To address this, the tests for the dynamic stiffness of rail pads under constant frequency and variable temperature conditions have been conducted using a universal testing machine fitted with a temperature control box, revealing its wide-band dynamic characteristics. These characteristics were represented using the Prony series. A detailed finite element model of the fastener system was developed, incorporating the nonlinear contact relationships among the components and the dynamic performance of rail pads. Frequency response analysis was performed to compare the dynamic steady-state responses of fastener systems with different rail pads. Finally, drop shaft impact tests were simulated to evaluate the vibration acceleration response of E-type fastener clip with various rail pads. The results indicate that the dynamic performance of rail pad significantly affects the vibration characteristics of E-type clips. Among the three rail pads with identical stiffness, the new mesh-type rail pad (NMTRP) demonstrated the best damping energy absorption capability, effectively reducing the vibration acceleration of the E-type Fastener clip.
In this work, we demonstrate an interesting structural phase transition from SnS2/reduced graphene oxide to SnS/sulfur-doped graphene at a moderate calcination temperature of 500 °C under an inert atmosphere. It is discovered that SnS2 chemically bound to rGO with a weakened C-S bond is easier to break and decompose into SnS, whereas it is difficult for pure-phase crystalline SnS2 to experience phase transformation at this temperature. Moreover, the thin-layered structure of SnS2 and rGO is an important factor for the effective doping of the dissociated Sx into graphene. Density functional theory calculations also reveal the feasibility of the structural phase transition process. Morphology characterization shows that partial SnS maintains the original nanosheet structure (∼100 nm) and the others are decomposed into tiny nanoparticles (10-20 nm). A high S-doping amount reduces the irreversible lithium storage sites on graphene, and the first coulombic efficiency is as high as 81.7%. In addition, thin-layered and small-sized SnS can alleviate the structural damage caused by volume expansion and shrinkage; therefore, a high specific capacity of 893.9 mA h g-1 is retained after 100 cycles.
Spiking neural networks (SNNs) have shown great potential in achieving high energy efficiency and low power consumption compared to artificial neural networks (ANNs). However, there remains a significant accuracy gap between SNNs and ANNs. To address this issue, we present an in-memory neuromorphic computing (IMNC) chip that supports hybrid spiking/artificial neural networks (S/ANNs) and sparsity-aware data flows. With the IMNC chip, we aim to improve inference accuracy while simultaneously achieving high energy efficiency through optimization at the algorithm, architecture, and circuit levels. First, at the algorithm level, we note that SNNs extract temporal features from input spikes using time-domain convolution operations. Based on this insight, we efficiently utilize leaky integrate (LI) neurons to hybridize SNNs and ANNs, thereby improving accuracy while maintaining highly sparse operations. Second, at the architecture level, we design a sparsity-aware architecture that supports a hybrid S/ANN topology with varying sparsity. Finally, at the circuit level, we propose a ring-based in-memory computing (IMC) macro, whose energy consumption is inversely proportional to the input sparsity, making it ideal for performing energy-efficient multiplication and accumulation (MAC) operations in both SNNs and ANNs. We evaluate the proposed hybrid S/ANNs on various classification tasks and demonstrate their stronger classification and generalization ability compared with pure SNNs. Notably, our IMNC chip, fabricated using 22 nm CMOS technology, achieves impressive measured accuracy rates of over 95% for voice activity detection (VAD) and ECG anomaly detection. Additionally, our IMNC chip demonstrates superior dynamic energy efficiency of 0.43 pJ per synaptic operation, outperforming related works.
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