Jeffrey M. Mativetsky

Binghamton University

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Paolo Samorı́

Centre National de la Recherche Scientifique

Peter Grütter

McGill University

Sarah A. Burke

University of British Columbia

Jeremy S. Mehta

Binghamton University

Emanuele Orgiu

Institut National de la Recherche Scientifique

Shawn Fostner

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Detlef‐M. Smilgies

Cornell University

Pravini S. Fernando

University of Illinois Urbana-Champaign

Yueh‐Lin Loo

Princeton University

Austin C. Faucett

Binghamton University

Cooperative Institutions

Binghamton University

Centre National de la Recherche Scientifique

Princeton University

Université de Strasbourg

McGill University

Max Planck Institute for Polymer Research

Institut de Science et d'Ingénierie Supramoléculaires

Institute of Organic Synthesis and Photoreactivity

Max Planck Society

Chinese Academy of Sciences

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Self‐Assembly of a Donor‐Acceptor Dyad Across Multiple Length Scales: Functional Architectures for Organic Electronics

Advanced Functional Materials (2009)

Jeffrey M. Mativetsky Marcel Kastler Rebecca C. Savage Desirée Gentilini Matteo Palma

Abstract Molecular dyads based on polycyclic electron donor (D) and electron acceptor (A) units represent suitable building blocks for forming highly ordered, solution‐processable, nanosegregated D‐A domains for potential use in (opto)electronic applications. A new dyad, based on alkyl substituted hexa‐ peri ‐hexabenzocoronene (HBC) and perylene monoimide (PMI) separated by an ethinylene linker, is shown to have a high tendency to self‐assemble into ordered supramolecular arrangements at multiple length scales: macroscopic extruded filaments display long‐range crystalline order, nanofiber networks are produced by simple spin‐coating, and monolayers with a lamellar packing are formed by physisorption at the solution‐HOPG interface. Moreover, highly uniform mesoscopic ribbons bearing atomically flat facets and steps with single‐molecule heights self‐assemble upon solvent‐vapor annealing. Electrical measurements of HBC‐PMI films and mesoscopic ribbons in a transistor configuration exhibit ambipolar transport with well balanced p‐ and n‐type mobilities. Owing to the increased level of order at the supramolecular level, devices based on ribbons show mobility increases of more than one order of magnitude.

Organic Electronics

Organic semiconductor

Ambipolar diffusion

10.1002/adfm.200900366

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Citations (141)

Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

Nanoscale (2011)

Matthias Treier Andrea Liscio Jeffrey M. Mativetsky Marcel Kastler Kläus Müllen

We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC-PMI donor-acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned 'on' much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).

Photoconductivity

Photoexcitation

Acceptor

Organic semiconductor

Organic field-effect transistor

10.1039/c2nr11635a

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Citations (17)

High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

Applied Physics Letters (2017)

Steven W. Button Jeffrey M. Mativetsky

Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

Organic semiconductor

Electron Mobility

Charge carrier

Active layer

10.1063/1.4999762

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Citations (20)

Use of an electron-beam evaporator for the creation of nanostructured pits in an insulating surface

Applied Physics Letters (2006)

Jeffrey M. Mativetsky Yoichi Miyahara Shawn Fostner Sarah A. Burke Peter Grütter

We demonstrate a method for creating monatomic-depth rectangular pits of controlled size in an alkali halide surface by using an electron-beam evaporator. Atomic resolution noncontact atomic force microscopy is used to characterize the structure and size distribution of the pits, with mean side lengths ranging from 6.5to20nm. It is also demonstrated that metal nanoparticles can be used to nucleate the growth of pits, resulting in pits with metal nanoparticles inside.

Monatomic ion

10.1063/1.2210288

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Citations (17)

An air gap moderates the performance of nanowire array transistors

Nanotechnology (2017)

Tong Yang Jeremy S. Mehta Jeffrey M. Mativetsky

Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires. The average air gap thickness is found to be unexpectedly large, being at least three times larger than the nanowire diameter, leading to a significant impact on transistor performance. The air gap acts as an additional dielectric layer that reduces the accumulation of charge carriers due to a gate voltage. Conventional determination of the charge carrier mobility ignores the presence of an air gap, resulting in an overestimate of charge carrier accumulation and an underestimate of charge carrier mobility. It is shown that the larger the air gap, the larger the mobility correction (which can be greater than an order of magnitude) and the larger the degradation in on-off current ratio. These results demonstrate the importance of minimizing the air gap and of taking the air gap into consideration when analyzing the electrical performance of transistors consisting of stacked nanowires. This finding is applicable to all types of stacked one-dimensional materials including organic and inorganic nanowires, and carbon nanotubes.

Air gap (plumbing)

Electron Mobility

Charge carrier

10.1088/1361-6528/aa5f0a

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Templated growth of 3,4,9,10-perylenetetracarboxylic dianhydride molecules on a nanostructured insulator

Nanotechnology (2007)

Jeffrey M. Mativetsky Sarah A. Burke Shawn Fostner Peter Grütter

Nanometre-scale 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) crystallites were produced by trapping the molecules inside monolayer-deep rectangular pits on an alkali halide surface. Noncontact atomic force microscopy was used to measure the crystallite dimensions and lattice structure with molecular resolution. The molecule–substrate lattice mismatch and island heights, typically three to four PTCDA layers, indicate a stress in the first two layers. One- and two-layer crystallites were only observed in pits with side lengths smaller than 10 nm.

Nanometre

10.1088/0957-4484/18/10/105303

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Citations (39)

Guiding Crystallization around Bends and Sharp Corners

Advanced Materials (2012)

Stephanie S. Lee Samuel B. Tang Detlef‐M. Smilgies Arthur R. Woll Marsha A. Loth

Control over the molecular orientation in organic thin films is demonstrated with precise in-plane spatial resolution over large areas. By exploiting the differential crystallization rates on substrates with different surface energies, the radial symmetry of spherulitic growth can be disrupted by preferentially selecting the molecular orientations that promote growth along the paths of the underlying patterns.

10.1002/adma.201104619

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Citations (65)

Strain Induced Dewetting of a Molecular System: Bimodal Growth of PTCDA on NaCl

Physical Review Letters (2008)

Sarah A. Burke Wei Ji Jeffrey M. Mativetsky Jessica M. Topple Shawn Fostner

Submonolayer coverages of the molecule 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) deposited on NaCl(001) surfaces were imaged with high resolution noncontact-atomic force microscopy. Two island types were observed: monolayer islands with a p3x3 epitaxy at low coverage and a mixture of these and bulklike crystallites at higher coverage. The transition between the pure monolayer islands and mixed islands occurs at approximately 0.85 ML, corresponding to a complete p3x3 layer. Calculations show the p3x3 epitaxy to be incompatible with a multilayer crystal of PTCDA. Consequently, the growth of additional layers results in an adaptation of the interface structure forcing a dewetting transition.

Dewetting

Strain (injury)

10.1103/physrevlett.100.186104

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Citations (99)

Resistivity and Magnetoresistance of Polypyrrole Nanowires

APS (2004)

Jeffrey M. Mativetsky W. R. Datars

Polypyrrole

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