This file contains the datasets presented in the paper titled "Realization of all-band-flat photonic lattices". There are two folders named " reflection" and "transmission". The first one contains the reflection spectrum detected on each site, which is the raw data for generating Fig. 2, Fig. 3, and Fig.S4. The second one contains the raw data for generating Fig.4 and Fig.S7.
We report thin SGOI (silicon germanium on insulator) with 65% Ge concentration p-MOSFET (metal-oxide-semiconductor-field-effect-transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO 2 /TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET
Weyl points have recently been predicted and experimentally observed in double-gyroid photonic crystals, as well as in other complex photonic structures such as stacked hexagonal-lattice slabs and helical waveguide arrays. In all above structures, the Weyl points are located between high frequency bands, and are difficult to probe experimentally. In this work, we show that a photonic crystal with a simple tetrahedral structure can host frequency-isolated Weyl points between the second and third bands. The minimal number of two Weyl points emerges from a threefold quadratic degeneracy at the Brillouin zone corner when time-reversal symmetry is broken. We verify theoretically that the Weyl points carry opposite topological charges, and are associated with Fermi arc-like surface states. This photonic crystal can be realized using ferromagnetic rods in the microwave frequency regime, providing a simple platform for studying the physics of Weyl points.
This paper presents a pulse forming network(PFN) stacked Blumlein pulse generator commutated by a single switch, in which the PFN is composed of ceramic capacitors and plate conductors. The shorted discharging characteristic of the shorted parasitic transmission line was analyzed in theory. Results show that the shorted parasitic transmission line could be replaced by a shorted inductor. Equivalent circuit models were simulated using Pspice code to compare the effect of the shorted parasitic transmission line with that of the shorted inductor. Simulation results show that the increase in the inductance of the shorted parasitic transmission line could improve the voltage efficiency. A four-stage stacked Blumlein pulse generator with magnetic cores was designed to increase the shorted inductance. Its voltage gain reaches 3.1 on the matched load.
Abstract Topological photonic states, inspired by robust chiral edge states in topological insulators, have recently been demonstrated in a few photonic systems, including an array of coupled on-chip ring resonators at communication wavelengths. However, the intrinsic difference between electrons and photons determines that the ‘topological protection’ in time-reversal-invariant photonic systems does not share the same robustness as its counterpart in electronic topological insulators. Here in a designer surface plasmon platform consisting of tunable metallic sub-wavelength structures, we construct photonic topological edge states and probe their robustness against a variety of defect classes, including some common time-reversal-invariant photonic defects that can break the topological protection, but do not exist in electronic topological insulators. This is also an experimental realization of anomalous Floquet topological edge states, whose topological phase cannot be predicted by the usual Chern number topological invariants.
We propound a plasmonic anti-parity-time (APT) platform with radiation property for wireless ultrasensitive sensors. By exploring space-wave degrees of freedom, we achieve polarization-controlled APT phase transition. Our system shows great potential for exploring novel APT physics, and designing radiative APT devices.
Aluminum hydroxide nanocrystals consisting of an amorphous shell and crystalline core are fabricated by pulsed laser ablation of an aluminum target in water. The colloid consisting of nanocrystals with a uniform size exhibits a size-independent photoluminescence (PL) band at ∼383 nm. According to the PL excitation spectra and time-resolved PL decay analysis, this PL band originates from oxygen vacancies in the amorphous shell and Förster energy transfer occurs between the oxygen vacancy levels in the crystalline core and amorphous shell. These phenomena are found to alter the PL excitation spectra.
'/%3e%3cuse xlink:href='%23a' transform='rotate(23.036 .093 25.536)'/%3e%3cuse xlink:href='%23a' transform='rotate(45.87 1.273 16.18)'/%3e%3cuse xlink:href='%23a' transform='rotate(69.945 .996 12.078)'/%3e%3cuse xlink:href='%23a' transform='rotate(20.66 -19.689 31.932)'/%3e%3c/svg%3e)
'/%3e%3cuse xlink:href='%23a' transform='translate(288.889 -214.211)'/%3e%3cuse xlink:href='%23a' transform='translate(108 342.749)'/%3e%3cuse xlink:href='%23a' transform='translate(469.189 342.749)'/%3e%3c/svg%3e)