D. Rubi

Consejo Nacional de Investigaciones Científicas y Técnicas

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

C. Ferreyra

Centro Científico Tecnológico - Tucumán

W. Román Acevedo

Consejo Nacional de Investigaciones Científicas y Técnicas

J. Fontcuberta

Institut de Ciència de Materials de Barcelona

M. J. Sánchez

Universidad Nacional de Cuyo

Beatriz Noheda

University of Groningen

Myriam H. Aguirre

Universidad de Zaragoza

P. Lévy

Consejo Nacional de Investigaciones Científicas y Técnicas

U. Lüders

Laboratoire de Cristallographie et Sciences des Matériaux

Carlos Frontera

Institut de Ciència de Materials de Barcelona

C. Acha

University of Buenos Aires

Cooperative Institutions

Consejo Nacional de Investigaciones Científicas y Técnicas

Comisión Nacional de Energía Atómica

Centre National de la Recherche Scientifique

University of Buenos Aires

Centro Atómico Constituyentes

Centro Científico Tecnológico - San Juan

Consejo Superior de Investigaciones Científicas

Universitat Autònoma de Barcelona

National University of General San Martín

Institut de Ciència de Materials de Barcelona

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

Growth of (100)-highly textured BaBiO3 thin films on silicon

Thin Solid Films (2016)

C. Ferreyra Florencia Marchini Pablo Granell F. Golmar Cecilia Albornoz

Texture (cosmology)

Deposition

10.1016/j.tsf.2016.06.033

Cite

Citations (7)

Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices

Nanotechnology (2024)

W. Román Acevedo Myriam H. Aguirre D. Rubi

In this paper we investigate the electrical response response of amorphous complex oxide memristors under different electrical stimulation. With the help of transmission electron microscopy and energy dispersive x-ray spectroscopy, we observed that those devices stimulated with voltage display strong cationic segregation at the nanoscale together with the partial crystallization of the oxide layer. On the other hand, devices stimulated with current maintain their amorphous character with no significative chemical changes. Our analysis also shows that current stimulation leads to a more stable memristive response with smaller cycle-to-cycle variations. These findings could contribute to the design of more reliable oxide-based memristors and underscore the crucial effect that has type of electrical stimulation applied to the devices has on their integrity and reliability.

Complex oxide

Memristor

10.1088/1361-6528/ada297

Cite

Citations (0)

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform

Radiation Physics and Chemistry (2018)

Mariano Barella G. A. Sanca F. Gomez-Marlasca W. Román Acevedo D. Rubi

Characterization

Acronym

10.1016/j.radphyschem.2018.07.005

Cite

Citations (10)

TRANSICIÓN METAL-AISLANTE INDUCIDA POR CAMPO ELÉCTRICO EN LÁMINAS DELGADAS DE La0.5Ca0.5MnO3

ANALES AFA (2013)

G. Bridoux M. Villafuerte S. Duhalde D. Rubi S. P. Heluani

En este trabajo se presentan resultados del comportamiento electrico de peliculas delgadas de La0.5Ca0.5MnO3 depositadas por ablacion laser sobre substratos de silicio (100). Las laminas resultaron policristalinas pero texturadas y con espesores entre 37 y 77 nm. Se midio la respuesta electrica de las laminas en funcion de la temperatura cuando se aplica un rango de tensiones electricas entre 1 y 50 Voltios. Las curvas de resistencia en funcion de la temperatura, para diferentes valores de tension y espesor, muestran un plateau para tensiones altas. Los efectos observados pueden ser interpretados en terminos de una competencia fuerte entre el orden de carga y el orden ferromagnetico.

Source

Cite

Citations (0)

The domain walls of antiferromagnetic TbMnO$_{3}$ thin films

Bulletin of the American Physical Society (2013)

Christophe Daumont S. Farokhipoor César Magén D. Rubi Sriram Venkatesan

Source

Cite

Citations (0)

BaTiO 3 thin films on platinized silicon: Growth, characterization and resistive memory behavior

Thin Solid Films (2017)

A. Román M. Rengifo Leila M. Saleh Medina M. Reinoso R. Martı́n Negri

Pulsed Laser Deposition

Tetragonal crystal system

Stoichiometry

Characterization

10.1016/j.tsf.2017.03.038

Cite

Citations (8)

Spectroscopic investigation on the influence of AS defects on the electronic structure of Sr2FeMoO6

Journal of Physics and Chemistry of Solids (2005)

D. Rubi J. Navarro J. Fontcuberta M. Izquierdo J. Ávila

X-ray absorption spectroscopy

Curie

Density of states

10.1016/j.jpcs.2005.10.123

Cite

Citations (8)

Tuning the electronic properties at the surface of BaBiO3 thin films

AIP Advances (2016)

C. Ferreyra Francisco Güller Florencia Marchini U. Lüders Cecilia Albornoz

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

Pulsed Laser Deposition

Surface States

Texture (cosmology)

Surface conductivity

Deposition

10.1063/1.4954037

Cite

Citations (8)

Tuning the electronic properties at the surface of BaBiO3 thin films

arXiv (Cornell University) (2015)

C. Ferreyra Francisco Güller Florencia Marchini U. Lüders Cecilia Albornoz

Pulsed Laser Deposition

Surface States

Texture (cosmology)

Surface conductivity

10.48550/arxiv.1508.06480

Cite

Citations (0)

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Nanotechnology (2019)

C. Ferreyra M. J. Sánchez Myriam H. Aguirre C. Acha S. Bengió

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

Neuromorphic engineering

Electromigration

Synaptic weight

10.1088/1361-6528/ab6476

Cite

Citations (12)