Nicholas R. Glavin

United States Air Force Research Laboratory

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Christopher Muratore

University of Dayton

Michael Snure

United States Air Force Research Laboratory

Andrey A. Voevodin

University of North Texas

David C. Moore

United States Air Force Research Laboratory

Ajit K. Roy

United States Air Force Research Laboratory

Deep Jariwala

University of Pennsylvania

Rahul Rao

United States Air Force Research Laboratory

Michael J. Motala

UES (United States)

Pulickel M. Ajayan

Rice University

W. Joshua Kennedy

United States Air Force Research Laboratory

Cooperative Institutions

United States Air Force Research Laboratory

163

Wright-Patterson Air Force Base

139

University of Dayton

UES (United States)

Rice University

Pennsylvania State University

University of Pennsylvania

Northwestern University

National Institute of Standards and Technology

U.S. Air Force Research Laboratory Materials and Manufacturing Directorate

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Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state

Applied Physics Letters (2018)

Zahabul Islam Aman Haque Nicholas R. Glavin

Degradation and failure phenomena in high electron mobility transistors (HEMTs) are complex functions of electrical, thermal, and mechanical stresses as well as the quality of the device materials and their interfaces. Thus, it is difficult to predict or identify the dominant mechanism under various test protocols adopted in the literature. We propose that real-time visualization of the device microstructure can shift this paradigm. This is demonstrated by operating electron transparent AlGaN/GaN HEMTs inside a transmission electron microscope (TEM). Through the bright-field, diffraction, and energy dispersive spectroscopy techniques, we show that it is possible to characterize the lattice defects and diffusion of the various elements and thus monitor the microstructural quality during the transistor failure. Off-state failure studies in the TEM clearly show the critical role of defects and interfaces that lead to punch-through mechanisms at the drain and even source sides. The “seeing while measuring” approach presented in this study can be useful in pinpointing the dominant failure mechanisms and their fundamental origin.

Electron Mobility

10.1063/1.5046178

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Citations (17)

Ultra-thin boron nitride films by pulsed laser deposition: Plasma diagnostics, synthesis, and device transport

PhDT (2016)

Nicholas R. Glavin

Pulsed Laser Deposition

Deposition

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2D Boron Nitride

Semiconductors and semimetals (2016)

Ganesh R. Bhimanapati Nicholas R. Glavin Joshua A. Robinson

Exfoliation joint

Nanosheet

Phosphorene

10.1016/bs.semsem.2016.04.004

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Citations (100)

Spalling-induced liftoff and transfer of electronic films using a van der Waals release layer

arXiv (Cornell University) (2021)

Eric W. Blanton Michael J. Motala Timothy A. Prusnick Albert Hilton Jeff L. Brown

Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and two-dimensional (2D) materials, using 2D boron nitride (BN)-on-sapphire templates is demonstrated. The van der Waals BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for van der Waals bonding. A tensilely-stressed Ni layer sputtered on top of the film induces controlled spalling fracture which propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity is greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a selected area lift-off technique is developed which allows for isolation and transfer of individual devices while maximizing wafer area use and minimizing extra alignment steps in the integration process.

Wafer Bonding

10.48550/arxiv.2105.06828

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Effect of High Current Density Pulses on Performance Enhancement of Optoelectronic Devices

ECS Journal of Solid State Science and Technology (2024)

Md Hafijur Rahman Nicholas R. Glavin Aman Haque F. Ren S. J. Pearton

Thermal annealing is commonly used in fabrication processing and/or performance enhancement of electronic and opto-electronic devices. In this study, we investigate an alternative approach, where high current density pulses are used instead of high temperature. The basic premise is that the electron wind force, resulting from the momentum loss of high-energy electrons at defect sites, is capable of mobilizing internal defects. The proposed technique is demonstrated on commercially available optoelectronic devices with two different initial conditions. The first study involved a thermally degraded edge-emitting laser diode. About 90% of the resulting increase in forward current was mitigated by the proposed annealing technique where very low duty cycle was used to suppress any temperature rise. The second study was more challenging, where a pristine vertical-cavity surface-emitting laser (VCSEL) was subjected to similar processing to see if the technique can enhance performance. Encouragingly, this treatment yielded a notable improvement of over 20% in the forward current. These findings underscore the potential of electropulsing as an efficient in-operando technique for damage recovery and performance enhancement in optoelectronic devices.

10.1149/2162-8777/ad28c8

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Citations (2)

Turn of the decade: versatility of 2D hexagonal boron nitride

Journal of Physics Materials (2021)

Albert F. Rigosi Antonio Levy Michael Snure Nicholas R. Glavin

The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.

Hexagonal boron nitride

Popularity

10.1088/2515-7639/abf1ab

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Citations (22)

Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Journal of Electronic Materials (2015)

Jennifer G. DiStefano Yu‐Chuan Lin Joshua A. Robinson Nicholas R. Glavin Andrey A. Voevodin

10.1007/s11664-015-4255-x

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Citations (13)

Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer

ACS Applied Materials & Interfaces (2020)

Michael J. Motala Eric W. Blanton Albert Hilton Eric R. Heller Christopher Muratore

Mechanical transfer of high-performing thin-film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore nontraditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional boron nitride release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals bonding and with a polymer adhesive interlayer. No device degradation was observed because of the transfer process, and a significant reduction in device temperature (327-132 °C at 600 mW) was observed when directly bonded to a silicon carbide (SiC) wafer relative to the starting wafer. With the use of a benzocyclobutene (BCB) adhesion interlayer, devices were easily transferred and characterized on Kapton and ceramic films, representing an exciting opportunity for integration onto arbitrary substrates. Upon reduction of this polymer adhesive layer thickness, the AlGaN/GaN HEMTs transferred onto a BCB/SiC substrate resulted in comparable peak temperatures during operation at powers as high as 600 mW to the as-grown wafer, revealing that by optimizing interlayer characteristics such as thickness and thermal conductivity, transferrable devices on polymer layers can still improve performance outputs.

Benzocyclobutene

10.1021/acsami.0c02818

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Citations (28)

Epitaxial growth of quasi-2D van der Waals ferromagnets on crystalline substrates

Nanotechnology (2024)

Subhransu Kumar Negi M B Abhijith Sourav Paul Vineet Kumar Pandey Ajit K. Roy

Abstract Intrinsic magnetism in van der Waals materials has instigated interest in exploring magnetism in the 2D limit for potential applications in spintronics and also in understanding novel control of 2D magnetism via variation of layer thickness, gate tunability and magnetoelectric effects. The chromium telluride (Cr x Te y ) family is an interesting subsection of ferromagnetic materials with high T C values, also presenting diverse stoichiometry arising from self-intercalation of Cr. Apart from the layered CrTe 2 system, the other non-layered Cr x Te y compounds also offer exceptional magnetic properties, and a novel growth technique to grow thin films of these non-layered compounds offers exciting possibilities for ultra-thin spin-based electronics and magnetic sensors. In this work, we discuss the role of crystalline substrates in chemical vapor deposition growth of non-layered 2D ferromagnets, where the crystal symmetry of the substrate as well as the misfit and strain are the key players governing the growth mechanism of ultra-thin Cr 5 Te 8 , a non-layered ferromagnet. The magnetic studies of the as-grown Cr 5 Te 8 reveal the signatures of co-existing soft and hard ferromagnetic phases, which makes this system an intriguing system to search for emergent topological phases, such as magnetic skyrmions.

10.1088/1361-6528/ad6ce1

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Enhanced heat dissipation and lowered power consumption in electronics using two-dimensional hexagonal boron nitride coatings

arXiv (Cornell University) (2024)

Rajeev Karthik Ashutosh Srivastava Soumen Midya A.S. Shanu Surbhi Slathia

Miniaturization of electronic components has led to overheating, increasing power consumption and causing early circuit failures. Conventional heat dissipation methods are becoming inadequate due to limited surface area and higher short-circuit risks. This study presents a fast, low-cost, and scalable technique using 2D hexagonal boron nitride (hBN) coatings to enhance heat dissipation in commercial electronics. Inexpensive hBN layers, applied by drop casting or spray coating, boost thermal conductivity at IC surfaces from below 0.3 W/m-K to 260 W/m-K, resulting in over double the heat flux and convective heat transfer. This significantly reduces operating temperatures and power consumption, as demonstrated by a 17.4% reduction in a coated audio amplifier circuit board. Density functional theory indicates enhanced interaction between 2D hBN and packaging materials as a key factor. This approach promises substantial energy and cost savings for large-scale electronics without altering existing manufacturing processes.

Hexagonal boron nitride

Power Electronics

10.48550/arxiv.2411.10030

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